Zavarin Evgeniy Evgenievich

Publications in Math-Net.Ru

1. Control of elastic stress during the growth of heterostructures (Al)GaN/SiC
   
   Fizika i Tekhnika Poluprovodnikov, 59:6 (2025),  315–318
2. Lasing in InGaN/GaN/AlGaN disk microstructures on silicon
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:11 (2025),  41–45
3. Effect of disorder on the optical properties of resonant Bragg structures based on III–N
   
   Fizika i Tekhnika Poluprovodnikov, 58:11 (2024),  594–600
4. Study of growth conditions effect on GaN doping with carbon from propane and methane
   
   Fizika i Tekhnika Poluprovodnikov, 58:3 (2024),  134–141
5. Stress analysis of GaN-based heterostructures on silicon substrates
   
   Fizika i Tekhnika Poluprovodnikov, 57:7 (2023),  546–550
6. Resonant light reflection from an optical lattice of excitons formed by 100 InGaN quantum wells
   
   Fizika i Tekhnika Poluprovodnikov, 55:9 (2021),  733–737
7. The influence of reactor pressure on the properties of GaN layers grown by MOVPE
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:24 (2020),  3–6
8. Insulating GaN epilayers co-doped with iron and carbon
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:14 (2019),  36–39
9. The effect of the method by which a high-resistivity GaN buffer layer is formed on properties of InAlN/GaN and AlGaN/GaN heterostructures with 2D electron gas
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:13 (2018),  51–58
10. Theoretical and experimental studies of the current–voltage and capacitance–voltage of HEMT structures and field-effect transistors
    
    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1599–1604
11. Optical spectroscopy of a resonant Bragg structure with InGaN/GaN quantum wells
    
    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1451–1454
12. Effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis
    
    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1401–1407
13. Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs
    
    Fizika i Tekhnika Poluprovodnikov, 50:9 (2016),  1263–1269
14. Elastic strains and delocalized optical phonons in AlN/GaN superlattices
    
    Fizika i Tekhnika Poluprovodnikov, 50:8 (2016),  1064–1069
15. Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation
    
    Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  245–249
16. Specific features of proton interaction with transistor structures having a 2D AlGaN/GaN channel
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:21 (2016),  39–46
17. The relationship between the reliability of transistors with 2D AlGaN/GaN channel and organization type of nanomaterial
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:13 (2016),  80–86
18. Semi-insulating GaN:C epilayers grown by metalorganic vapor phase epitaxy using propane as a carbon source
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:10 (2016),  85–91
19. The influence of growth conditions on the surface morphology and development of mechanical stresses in Al(Ga)N layers during metalorganic vapor phase epitaxy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:8 (2016),  86–93
20. Effect of the design of the active region of monolithic multi-color LED heterostructures on their spectra and emission efficiency
    
    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1563–1568
21. Optical lattices of excitons in InGaN/GaN quantum well systems
    
    Fizika i Tekhnika Poluprovodnikov, 49:1 (2015),  6–10
22. The influence of aluminum content on the surface morphology of heavily doped (Al)GaN mesastrip structures grown by selective metalorganic vapor phase epitaxy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:20 (2015),  74–81
23. MOVPE of III–N LED structures with short technological process
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:5 (2015),  9–17
24. Dependence of the efficiency of III–N blue LEDs on the structural perfection of GaN epitaxial buffer layers
    
    Fizika i Tekhnika Poluprovodnikov, 48:1 (2014),  55–60
25. Resonance Bragg structure with double InGaN quantum wells
    
    Fizika Tverdogo Tela, 55:9 (2013),  1706–1708
26. Influence of the carrier Gas, trimethylgallium flow, and growth time on the character of the selective epitaxy of GaN
    
    Fizika i Tekhnika Poluprovodnikov, 47:3 (2013),  414–419
27. InGaN/GaN heterostructures grown by submonolayer deposition
    
    Fizika i Tekhnika Poluprovodnikov, 46:10 (2012),  1357–1362
28. Composite InGaN/GaN/InAlN heterostructures emitting in the yellow-red spectral region
    
    Fizika i Tekhnika Poluprovodnikov, 46:10 (2012),  1304–1308
29. Group-III-nitride-based light-emitting diode on silicon substrate with epitaxial nanolayer of silicon carbide
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:6 (2012),  90–95
30. Double-cross epitaxial overgrowth of nonpolar gallium nitride layers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:6 (2012),  22–28
31. Influence of hydrogen on local phase separation in InGaN thin layers and properties of light-emitting structures based on them
    
    Fizika i Tekhnika Poluprovodnikov, 45:2 (2011),  274–279
32. Specific features of gallium nitride selective epitaxy in round windows
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:15 (2011),  95–102
33. Study of tunneling transport of carriers in structures with an InGaN/GaN active region
    
    Fizika i Tekhnika Poluprovodnikov, 44:12 (2010),  1615–1623
34. Formation of composite InGaN/GaN/InAlN quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 44:10 (2010),  1382–1386
35. Structural and optical properties of InAlN/GaN distributed Bragg reflectors
    
    Fizika i Tekhnika Poluprovodnikov, 44:7 (2010),  981–985
36. The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes
    
    Fizika i Tekhnika Poluprovodnikov, 44:7 (2010),  955–961
37. A monolithic white LED with an active region based on InGaN QWs separated by short-period InGaN/GaN superlattices
    
    Fizika i Tekhnika Poluprovodnikov, 44:6 (2010),  837–840
38. Effect of pressure in the growth reactor on the properties of the active region in the InGaN/GaN light-emitting diodes
    
    Fizika i Tekhnika Poluprovodnikov, 44:1 (2010),  126–129
39. Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes
    
    Fizika i Tekhnika Poluprovodnikov, 44:1 (2010),  96–100
40. High growth rate of AlN in a planetary MOVPE reactor
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:24 (2010),  33–39
41. High-efficiency InGaN/GaN/AlGaN light-emitting diodes with short-period InGaN/GaN superlattice for 530–560 nm range
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:22 (2010),  89–95
42. Heterostructures based on nitrides of group III elements: technical processes, properties, and light-emitting devices
    
    UFN, 171:8 (2001),  857–858