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Sakharov Aleksey Valentinovich

Publications in Math-Net.Ru

  1. Control of elastic stress during the growth of heterostructures (Al)GaN/SiC

    Fizika i Tekhnika Poluprovodnikov, 59:6 (2025),  315–318
  2. Effect of irradiation temperature on the carrier removal rate in GaN

    Fizika i Tekhnika Poluprovodnikov, 59:4 (2025),  227–229
  3. Lasing in InGaN/GaN/AlGaN disk microstructures on silicon

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:11 (2025),  41–45
  4. Effect of disorder on the optical properties of resonant Bragg structures based on III–N

    Fizika i Tekhnika Poluprovodnikov, 58:11 (2024),  594–600
  5. Heterostructures with two-dimensional electron gas based on GaN with InAlN/AlGaN barrier

    Fizika i Tekhnika Poluprovodnikov, 58:10 (2024),  582–585
  6. Study of growth conditions effect on GaN doping with carbon from propane and methane

    Fizika i Tekhnika Poluprovodnikov, 58:3 (2024),  134–141
  7. Effect of proton and electron irradiation on the parameters of gallium nitride Schottky diodes

    Fizika i Tekhnika Poluprovodnikov, 58:1 (2024),  49–52
  8. On a successful experience of homoepitaxy of $\beta$-Ga$_2$O$_3$ layers on native substrates

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:7 (2024),  43–46
  9. Stress analysis of GaN-based heterostructures on silicon substrates

    Fizika i Tekhnika Poluprovodnikov, 57:7 (2023),  546–550
  10. Thin-film LED based on AlInGaN layers grown on hybrid SiC/Si substrates

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:15 (2023),  3–6
  11. Study of Ga$_2$O$_3$ deposition by MOVPE from trimethylgallium and oxygen in a wide temperature range

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:4 (2022),  44–47
  12. Resonant light reflection from an optical lattice of excitons formed by 100 InGaN quantum wells

    Fizika i Tekhnika Poluprovodnikov, 55:9 (2021),  733–737
  13. A light-emitting diode based on alingan heterostructures grown on SiC/Si substrates and its fabrication technology

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:18 (2021),  3–6
  14. Peculiarities of epitaxial growth of III – N led heterostructures on SiC/Si substrates

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:15 (2021),  15–18
  15. The influence of reactor pressure on the properties of GaN layers grown by MOVPE

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:24 (2020),  3–6
  16. A TEM study of AlN–AlGaN–GaN multilayer buffer structures on silicon substrates

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:19 (2020),  50–54
  17. GaN selective epitaxy in sub-micron windows with different depths formed by ion beam nanolithography

    Fizika Tverdogo Tela, 61:12 (2019),  2333
  18. Insulating GaN epilayers co-doped with iron and carbon

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:14 (2019),  36–39
  19. Selective epitaxial growth of III–N structures using ion-beam nanolithography

    Fizika i Tekhnika Poluprovodnikov, 52:10 (2018),  1237–1243
  20. Diversity of properties of device structures based on group-III nitrides, related to modification of the fractal-percolation system

    Fizika i Tekhnika Poluprovodnikov, 52:7 (2018),  804–811
  21. Emission-line width and $\alpha$-factor of 850-nm single-mode vertical-cavity surface-emitting lasers based on InGaAs/AlGaAs quantum wells

    Fizika i Tekhnika Poluprovodnikov, 52:1 (2018),  98–104
  22. The effect of the method by which a high-resistivity GaN buffer layer is formed on properties of InAlN/GaN and AlGaN/GaN heterostructures with 2D electron gas

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:13 (2018),  51–58
  23. High-speed semiconductor vertical-cavity surface-emitting lasers for optical data-transmission systems (review)

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:1 (2018),  7–43
  24. Photonic-crystal waveguide for the second-harmonic generation

    Fizika Tverdogo Tela, 59:9 (2017),  1680–1683
  25. Emission-line width and $\alpha$-factor of 850-nm single-mode vertical-cavity surface-emitting lasers based on InGaAs/AlGaAs quantum wells

    Fizika i Tekhnika Poluprovodnikov, 51:12 (2017),  1697
  26. InGaN/GaN light-emitting diode microwires of submillimeter length

    Fizika i Tekhnika Poluprovodnikov, 51:1 (2017),  101–104
  27. Theoretical and experimental studies of the current–voltage and capacitance–voltage of HEMT structures and field-effect transistors

    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1599–1604
  28. Optical spectroscopy of a resonant Bragg structure with InGaN/GaN quantum wells

    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1451–1454
  29. Effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis

    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1401–1407
  30. Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs

    Fizika i Tekhnika Poluprovodnikov, 50:9 (2016),  1263–1269
  31. Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation

    Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  245–249
  32. Specific features of proton interaction with transistor structures having a 2D AlGaN/GaN channel

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:21 (2016),  39–46
  33. Metamaterial for efficient second harmonic generation

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:20 (2016),  40–48
  34. The relationship between the reliability of transistors with 2D AlGaN/GaN channel and organization type of nanomaterial

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:13 (2016),  80–86
  35. Semi-insulating GaN:C epilayers grown by metalorganic vapor phase epitaxy using propane as a carbon source

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:10 (2016),  85–91
  36. The influence of growth conditions on the surface morphology and development of mechanical stresses in Al(Ga)N layers during metalorganic vapor phase epitaxy

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:8 (2016),  86–93
  37. Effect of the design of the active region of monolithic multi-color LED heterostructures on their spectra and emission efficiency

    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1563–1568
  38. Capacitance-voltage characteristics of (Al/Ti)/Al$_2$O$_3$/$n$-GaN MIS structures

    Fizika i Tekhnika Poluprovodnikov, 49:8 (2015),  1061–1064
  39. Optical lattices of excitons in InGaN/GaN quantum well systems

    Fizika i Tekhnika Poluprovodnikov, 49:1 (2015),  6–10
  40. The influence of aluminum content on the surface morphology of heavily doped (Al)GaN mesastrip structures grown by selective metalorganic vapor phase epitaxy

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:20 (2015),  74–81
  41. MOVPE of III–N LED structures with short technological process

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:5 (2015),  9–17
  42. Dependence of the efficiency of III–N blue LEDs on the structural perfection of GaN epitaxial buffer layers

    Fizika i Tekhnika Poluprovodnikov, 48:1 (2014),  55–60
  43. Study of the degradation of the external quantum efficiency of UV LEDs based on AlGaN/GaN heterostructures grown by chloride-hydride vapor-phase epitaxy

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:13 (2014),  73–80
  44. Synthesis of GaN nano- and microwire crystals induced by a titanium nanolayer

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:9 (2014),  17–23
  45. Properties of InGaN/GaN heterostructures obtained using growth interruption under various conditions

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:9 (2014),  1–8
  46. Synthesis of an LED structure on the $(11\bar20)$ and $(0001)$ faces of mesa stripes grown by selective-area epitaxy

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:1 (2014),  37–42
  47. Resonance Bragg structure with double InGaN quantum wells

    Fizika Tverdogo Tela, 55:9 (2013),  1706–1708
  48. InGaN/GaN heterostructures grown by submonolayer deposition

    Fizika i Tekhnika Poluprovodnikov, 46:10 (2012),  1357–1362
  49. Composite InGaN/GaN/InAlN heterostructures emitting in the yellow-red spectral region

    Fizika i Tekhnika Poluprovodnikov, 46:10 (2012),  1304–1308
  50. Double-cross epitaxial overgrowth of nonpolar gallium nitride layers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:6 (2012),  22–28
  51. Influence of hydrogen on local phase separation in InGaN thin layers and properties of light-emitting structures based on them

    Fizika i Tekhnika Poluprovodnikov, 45:2 (2011),  274–279
  52. Study of tunneling transport of carriers in structures with an InGaN/GaN active region

    Fizika i Tekhnika Poluprovodnikov, 44:12 (2010),  1615–1623
  53. Formation of composite InGaN/GaN/InAlN quantum dots

    Fizika i Tekhnika Poluprovodnikov, 44:10 (2010),  1382–1386
  54. Structural and optical properties of InAlN/GaN distributed Bragg reflectors

    Fizika i Tekhnika Poluprovodnikov, 44:7 (2010),  981–985
  55. The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes

    Fizika i Tekhnika Poluprovodnikov, 44:7 (2010),  955–961
  56. Optical and structural properties of InGaN/GaN short-period superlattices for the active region of light- emitting diodes

    Fizika i Tekhnika Poluprovodnikov, 44:6 (2010),  857–863
  57. A monolithic white LED with an active region based on InGaN QWs separated by short-period InGaN/GaN superlattices

    Fizika i Tekhnika Poluprovodnikov, 44:6 (2010),  837–840
  58. Effect of pressure in the growth reactor on the properties of the active region in the InGaN/GaN light-emitting diodes

    Fizika i Tekhnika Poluprovodnikov, 44:1 (2010),  126–129
  59. Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes

    Fizika i Tekhnika Poluprovodnikov, 44:1 (2010),  96–100
  60. High growth rate of AlN in a planetary MOVPE reactor

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:24 (2010),  33–39
  61. High-efficiency InGaN/GaN/AlGaN light-emitting diodes with short-period InGaN/GaN superlattice for 530–560 nm range

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:22 (2010),  89–95
  62. Heterostructures based on nitrides of group III elements: technical processes, properties, and light-emitting devices

    UFN, 171:8 (2001),  857–858
  63. Vertical-cavity emitting devices with quantum-dot structures

    UFN, 171:8 (2001),  855–857
  64. Наблюдения космического излучения с помощью фотопластинок, чувствительных к электронам

    UFN, 38:3 (1949),  452–454

© Steklov Math. Inst. of RAS, 2026