Abramkin Demid Suad

Publications in Math-Net.Ru

1. Formation of self-assembled quantum dots during GaSbP deposition on AlP surface
   
   Fizika i Tekhnika Poluprovodnikov, 58:4 (2024),  185–191
2. Molecular beam epitaxy of GaSb on vicinal Si(001) substrates: influence of the conditions of layer nucleation on their structural and optical properties
   
   Fizika i Tekhnika Poluprovodnikov, 56:10 (2022),  980–992
3. Formation of InAs/GaP heterostructures with quantum wells on silicon substrates by molecular beam epitaxy
   
   Fizika i Tekhnika Poluprovodnikov, 55:2 (2021),  139–146
4. Effect of the crystallographic orientation of GaSb films on their structural properties during MBE heteroepitaxy on vicinal Si(001) substrates
   
   Fizika i Tekhnika Poluprovodnikov, 54:12 (2020),  1289–1295
5. GaAs/GaP quantum-well heterostructures grown on Si substrates
   
   Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1167–1171
6. Type-I indirect-gap semiconductor heterostructures on (110) substrates
   
   Fizika i Tekhnika Poluprovodnikov, 53:5 (2019),  710–717
7. Heterostructures with InAs/AlAs quantum wells and quantum dots grown on GaAs/Si hybrid substrates
   
   Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1373–1379
8. Spinodal decomposition in InSb/AlAs heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1280–1285
9. Luminescence of a near-surface GaAs/AlAs heterojunction in AlAs-based heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1565–1568
10. Formation of low-dimensional structures in the InSb/AlAs heterosystem
    
    Fizika i Tekhnika Poluprovodnikov, 51:9 (2017),  1282–1288
11. Quantum dots formed in InSb/AlAs and AlSb/AlAs heterostructures
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 103:11 (2016),  785–791
12. Doping silicon with erbium by recoil implantation
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:16 (2015),  52–60
13. Emission of photoexcited charge carriers from InAs/GaAs quantum dots grown by gas-phase epitaxy
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 100:3 (2014),  175–180
14. Coexistence of type-I and type-II band alignment in Ga(Sb,P)/GaP heterostructures with pseudomorphic self-assembled quantum dots
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 99:2 (2014),  81–86
15. Novel self-assembled quantum dots in the GaSb/AlAs heterosystem
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 95:10 (2012),  601–603
16. New system of self-assembled GaSb/GaP quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 46:12 (2012),  1571–1575
17. Trapping of charge carriers into InAs/AlAs quantum dots at liquid-helium temperature
    
    Fizika i Tekhnika Poluprovodnikov, 45:2 (2011),  183–191