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Baranov Anatoly Nikolaevich

Publications in Math-Net.Ru

  1. Self-trapping of the $d$-$d$ charge transfer exciton in bulk NiO evidenced by $X$-ray excited luminescence

    Pis'ma v Zh. Èksper. Teoret. Fiz., 95:10 (2012),  595–600
  2. Fine structure and magnetism of the cubic oxide compound Ni$_{0.3}$Zn$_{0.7}$O

    Fizika Tverdogo Tela, 53:7 (2011),  1292–1296
  3. Study of structure defects in indium-arsenide epitaxial layers

    Fizika i Tekhnika Poluprovodnikov, 26:9 (1992),  1612–1624
  4. LENGTH-WAVE LASERS BASED ON INASSB-INASSBP FOR METHANE SPECTROSCOPY WHERE (LAMBDA=3.2-3.4 MU-M)

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:22 (1992),  6–10
  5. UNCOOLED PHOTODIODES BASED ON INASSBP AND GAINASSB FOR 3-5 MU-M SPECTRAL RANGE

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:17 (1992),  50–53
  6. GENERATION OF COHERENT EMISSION ON P-P-BOUNDARY IN DHS GAINASSB LASERS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:17 (1992),  18–24
  7. EFFECT OF INTERFERENCE RECOMBINATION ON THRESHOLD CHARACTERISTICS OF GAINASSB/GASB LASERS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:17 (1991),  54–59
  8. Узкозонные гетеропереходы II типа в системе твердых растворов GaSb$-$InAs

    Fizika i Tekhnika Poluprovodnikov, 24:8 (1990),  1397–1406
  9. Природа спонтанной электролюминесценции гетероструктур II-типа GalnAsSb/GaSb

    Fizika i Tekhnika Poluprovodnikov, 24:6 (1990),  1056–1061
  10. Электрические и фотоэлектрические свойства твердых растворов $p$-GaInSbAs

    Fizika i Tekhnika Poluprovodnikov, 24:1 (1990),  98–103
  11. LONG-WAVE LIGHT DIODES BASED ON INAS1-X-YSBXPY/INAS HETEROTRANSITIONS (WHERE LAMBDA=3.0-4 MU-M AT 300-K) WITH WIDE-BAND WINDOW

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:16 (1990),  42–47
  12. CALCULATION OF THE WIDTH OF EMISSION-LINE OF LONG-WAVE GAINASSB INJECTION-LASERS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:14 (1990),  66–70
  13. PREPARATION OF INX-GA1-X-ASY-SB1-Y SOLID-SOLUTIONS ISOPERIODIC TO CASB NEAR THE IMMISCIBILITY BOUNDARY

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:5 (1990),  33–38
  14. UNCOOLED PHOTODIODES BASED ON INAS/INASSBP FOR THE SPECTRAL RANGE OF 2-3,5 MU-M

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:4 (1990),  27–32
  15. HIGH-PERFORMANCE PHOTODIODES BASED ON GAINASSB FOR SPECTRAL RANGE OF 1.8-2.4 MU-M (T=300-K)

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:18 (1989),  71–75
  16. LOW-NOISE CUMULATIVE PHOTODIODES WITH SEPARATED AREAS OF ABSORPTION AND MULTIPLICATION FOR THE 1.6-2.4-MU-M SPECTRUM RANGE

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:17 (1989),  71–76
  17. SUPERFAST-RESPONSE GAINASSB-BASED P-1-N PHOTODIODE FOR SPECTRAL RANGE OF 1,5-2,3 MU-M

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:7 (1989),  15–19
  18. LONG-WAVE LASERS BASED ON GAINASSB SOLID-SOLUTIONS NEAR THE IMMISCIBILITY BOUNDARY(LAMBDA-APPROXIMATELY-2.5 MU-M, T=300-K)

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:20 (1988),  1839–1843
  19. EMISSION GENERATION IN THE CHANNELED OVERGROWN LASER BASED ON GAINASSB/GASB IN CONTINUOUS REGIME (T=20-DEGREES-C, LAMBDA=2.0-MU-M)

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:18 (1988),  1671–1675
  20. GAINASSB/GAALASSB-BASED AVALANCHE PHOTODIODE WITH SEPARATED ABSORPTION AND MULTIPLICATION AREAS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:11 (1988),  986–991
  21. HIGH-EFFICIENT PHOTODIODES BASED ON GAINASSB (WHERE LAMBDA=2.2 MU-M, ZETA=4-PERCENT, T=300-K)

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:9 (1988),  845–849
  22. CUMULATION OF PHOTOFLOW IN THE N-N GASB-GAINASSB ISOTOPIC STRUCTURE

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:5 (1988),  389–393
  23. LONG-WAVE OPTICAL-ABSORPTION IN P-GASB

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:1 (1988),  64–68
  24. Polarization of emission in quantum dimensional on one heterotransition

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:6 (1987),  332–337
  25. Photoluminescence of Gallium-Antimonide Epitaxial Layers Grown from the Melts Enriched by Antimony

    Fizika i Tekhnika Poluprovodnikov, 19:9 (1985),  1676–1679
  26. Coordinate Dependence of the Difference between the Coefficients of Collision Ionization of Holes and Electrons in a Variband $p{-}n$ Structure

    Fizika i Tekhnika Poluprovodnikov, 19:3 (1985),  502–506
  27. Suppression of natural acceptors in $Ga\,Sb$

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:2 (1985),  117–121
  28. NON-HOMOGENEOUS MULTIPLICATION IN CASCADE PHOTODIODES WITH THE INCONGRUITY OF LATTICE PERIODS ON THE HETEROBOUNDARY

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:22 (1984),  1360–1364
  29. Спектральная зависимость коэффициента лавинного умножения в варизонной $p{-}n$-структуре

    Fizika i Tekhnika Poluprovodnikov, 17:4 (1983),  753–755
  30. Мышьяк в Ga$_{1-x}$Al$_{x}$Sb$_{1-y}$As$_{y}$/GaSb: коэффициент сегрегации и распределение по толщине эпитаксиальных слоев

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:11 (1983),  645–648

© Steklov Math. Inst. of RAS, 2026