Strikha Maksim Vitalyevich

Publications in Math-Net.Ru

1. Mechanism of the antihysteresis behavior of the resistivity of graphene on a Pb(Zr$_x$Ti$_{1-x}$)O$_3$ ferroelectric substrate
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 95:4 (2012),  216–218
2. Evidence of the third $(A^+)$ level of the mercury vacancy in Cd$_x$Hg$_{1-x}$Te
   
   Fizika i Tekhnika Poluprovodnikov, 46:7 (2012),  905–909
3. Elastic state of stress in narrow-gap semiconductors: A fundamental possibility to increase the quantum yield of infrared radiation
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 73:9 (2001),  561–564
4. Междузонные ИК переходы в одноосно деформированном узкощелевом полупроводнике
   
   Fizika i Tekhnika Poluprovodnikov, 24:7 (1990),  1227–1233
5. Ударная ионизация в дырочном антимониде индия
   
   Fizika i Tekhnika Poluprovodnikov, 22:6 (1988),  1117–1119
6. Collisional Ionization in Indium Antimonide
   
   Fizika i Tekhnika Poluprovodnikov, 20:10 (1986),  1835–1840
7. Auger Recombination of Holes via Deep Acceptor in $n$-Type GaSb
   
   Fizika i Tekhnika Poluprovodnikov, 20:5 (1986),  942–944
8. On impurity auger-recombination
   
   Fizika Tverdogo Tela, 27:8 (1985),  2313–2319
9. Auger Recombination via Donors
   
   Fizika i Tekhnika Poluprovodnikov, 19:9 (1985),  1715–1717
10. Impurity Auger Recombination in Silicon
    
    Fizika i Tekhnika Poluprovodnikov, 19:4 (1985),  697–702
11. Auger Recombination of Holes via Deep Donors in $n$-Type InSb
    
    Fizika i Tekhnika Poluprovodnikov, 18:3 (1984),  441–445
12. Impact Recombination of Electrons via Deep and Shallow Acceptors in $p$-Type Semiconductors
    
    Fizika i Tekhnika Poluprovodnikov, 18:1 (1984),  43–48