Shamirzaev Timur Sezgirovich

Publications in Math-Net.Ru

1. GaAs/GaP quantum-well heterostructures grown on Si substrates
   
   Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1167–1171
2. Type-I indirect-gap semiconductor heterostructures on (110) substrates
   
   Fizika i Tekhnika Poluprovodnikov, 53:5 (2019),  710–717
3. Nonreciprocal optical and magnetooptical effects in semiconductor quantum wells
   
   Fizika Tverdogo Tela, 60:11 (2018),  2229–2235
4. Basic requirements of spin-flip Raman scattering on excitonic resonances and its modulation through additional high-energy illumination in semiconductor heterostructures
   
   Fizika Tverdogo Tela, 60:8 (2018),  1583
5. Exciton recombination and spin dynamics in indirect-gap quantum wells and quantum dots
   
   Fizika Tverdogo Tela, 60:8 (2018),  1542–1555
6. Heterostructures with InAs/AlAs quantum wells and quantum dots grown on GaAs/Si hybrid substrates
   
   Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1373–1379
7. Spinodal decomposition in InSb/AlAs heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1280–1285
8. Luminescence of a near-surface GaAs/AlAs heterojunction in AlAs-based heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1565–1568
9. Formation of low-dimensional structures in the InSb/AlAs heterosystem
   
   Fizika i Tekhnika Poluprovodnikov, 51:9 (2017),  1282–1288
10. Quantum dots formed in InSb/AlAs and AlSb/AlAs heterostructures
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 103:11 (2016),  785–791
11. Edge and defect luminescence of powerful ultraviolet InGaN/GaN light-emitting diodes
    
    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1513–1518
12. Electroluminescent 1.5-$\mu$m light-emitting diodes based on $p^+$-Si/NC $\beta$-FeSi$_2$/$n$-Si structures
    
    Fizika i Tekhnika Poluprovodnikov, 49:4 (2015),  519–523
13. Exciton-plasmon interaction in hybrid quantum dot/metal cluster structures fabricated by molecular-beam epitaxy
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 99:4 (2014),  245–249
14. Coexistence of type-I and type-II band alignment in Ga(Sb,P)/GaP heterostructures with pseudomorphic self-assembled quantum dots
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 99:2 (2014),  81–86
15. Novel self-assembled quantum dots in the GaSb/AlAs heterosystem
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 95:10 (2012),  601–603
16. New system of self-assembled GaSb/GaP quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 46:12 (2012),  1571–1575
17. Forming interface in Pd/Fe/GaAs/InGaAs structure for optical detector of free-electron spin
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:1 (2012),  27–36
18. Nonradiative exciton transfer by the Förster mechanism from InAs/AlAs quantum dots to dye molecules in hybrid structures
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 94:10 (2011),  828–831
19. Trapping of charge carriers into InAs/AlAs quantum dots at liquid-helium temperature
    
    Fizika i Tekhnika Poluprovodnikov, 45:2 (2011),  183–191
20. Type-I semiconductor heterostructures with an indirect-gap conduction band
    
    Fizika i Tekhnika Poluprovodnikov, 45:1 (2011),  97–103
21. Monitoring the composition of the Cd$_{1-z}$Zn$_z$Te heteroepitaxial layers by spectroscopic ellipsometry
    
    Fizika i Tekhnika Poluprovodnikov, 44:1 (2010),  62–68
22. Observation of exchange interaction effects under optical orientation of excitons in AlGaAs
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 77:10 (2003),  664–667
23. Millisecond photoluminescence kinetics in a system of direct-bandgap InAs quantum dots in an AlAs matrix
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 77:7 (2003),  459–463


24. Charged vacancies formation in AlAs anionic sublattice
    
    Fizika i Tekhnika Poluprovodnikov, 57:4 (2023),  225–231