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Mel'tser Boris Yakovlevich

Publications in Math-Net.Ru

  1. Optimization of the structural properties and surface morphology of a convex-graded In$_{x}$Al$_{1-x}$As ($x$ = 0.05–0.83) metamorphic buffer layer grown via MBE on GaAs (001)

    Fizika i Tekhnika Poluprovodnikov, 52:1 (2018),  127–132
  2. Metamorphic InAs/InGaAs/InAlAs quantum wells with submonolayer InSb insertions emitted in the mid-infrared spectral range

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:20 (2016),  33–39
  3. Peculiarities of the electrophysical properties of InSb/AlInSb/AlSb heterostructures with a high electron concentration in the two-dimensional channel

    Fizika i Tekhnika Poluprovodnikov, 48:3 (2014),  352–357
  4. Determination of the thickness and spectral dependence of the refractive index of Al$_x$In$_{1-x}$Sb epitaxial layers from reflectance spectra

    Fizika i Tekhnika Poluprovodnikov, 47:2 (2013),  258–263
  5. Optical Properties of Epitaxial Al$_x$In$_{1-x}$Sb Alloy Layers

    Fizika i Tekhnika Poluprovodnikov, 45:11 (2011),  1481–1485
  6. Features of molecular-beam epitaxy and structural properties of AlInSb-based heterostructures

    Fizika i Tekhnika Poluprovodnikov, 45:10 (2011),  1379–1385
  7. Study of photoluminescence and electroluminescence mechanisms in quantum-confined InSb/InAs heterostructures

    Fizika i Tekhnika Poluprovodnikov, 44:8 (2010),  1098–1103
  8. Molecular beam epitaxy of thermodynamically metastable GaInAsSb alloys for medium IR-range photodetectors

    Fizika i Tekhnika Poluprovodnikov, 44:5 (2010),  699–705
  9. Spin injection in GaAs/GaSb quantum-well heterostructures

    Fizika i Tekhnika Poluprovodnikov, 44:2 (2010),  205–209
  10. Effect of the spin-orbit interaction on the cyclotron resonance of two-dimensional electrons

    Pis'ma v Zh. Èksper. Teoret. Fiz., 79:11 (2004),  674–679
  11. Observation of a light-induced nonohmic current in a toroidal-moment-possessive nanostructure

    Pis'ma v Zh. Èksper. Teoret. Fiz., 76:7 (2002),  547–549
  12. Cyclotron resonance in the InAs/GaSb heterostructure in an inclined magnetic field

    Pis'ma v Zh. Èksper. Teoret. Fiz., 76:4 (2002),  258–262
  13. Far infrared electroluminescence in cascade type-II heterostructures

    Pis'ma v Zh. Èksper. Teoret. Fiz., 75:8 (2002),  463–466
  14. Ordered quantum-dot arrays in semiconducting matrices

    UFN, 166:4 (1996),  423–428
  15. Growth of GaAs-AlAs quantum clusters on faceted GaAs surface oriented not aling to (100) by the method of molecular-beam epitaxy

    Fizika i Tekhnika Poluprovodnikov, 26:10 (1992),  1715–1722
  16. Получение методом молекулярно-пучковой эпитаксии гетероструктур GaSb/InAs/GaSb с высокой подвижностью двумерных электронов

    Fizika i Tekhnika Poluprovodnikov, 24:4 (1990),  717–719
  17. Электрические и оптические эффекты при резонансном туннелировании в (Al, Ga)As$-$GaAs-гетероструктурах с двойным барьером

    Fizika i Tekhnika Poluprovodnikov, 24:2 (1990),  361–363
  18. (In, Ga, Al)As ДГС РО лазеры на длину волны 1.1 мкм с (In, Ga)As напряженной квантовой ямой, ограниченной короткопериодной сверхрешеткой

    Fizika i Tekhnika Poluprovodnikov, 24:2 (1990),  359–361
  19. (Al, Ga)As ДГС РО лазеры на длины волн 0.8 мкм (175 А/см$^{2}$) и 0.73 мкм (350 A/см$^{2}$) с легированной квантовой ямой

    Fizika i Tekhnika Poluprovodnikov, 24:1 (1990),  201–203
  20. Растекание и поверхностная рекомбинация неравновесных носителей в квантово-размерных (Al, Ga)As ДГС РО лазерах с широким полоском

    Fizika i Tekhnika Poluprovodnikov, 24:1 (1990),  152–158
  21. INCREASING OF MOBILITY OF TWO-DIMENSIONAL ELECTRONS ON ALAS/GAAS HETEROBOUNDARY AS COMPARED TO ALGAAS/GAAS IN HETEROSTRUCTURES WITH SELECTIVE DELTA-ALLOYING

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:8 (1989),  68–71
  22. Отражение в экситонной области спектра структуры с одиночной квантовой ямой. Наклонное и нормальное падение света

    Fizika i Tekhnika Poluprovodnikov, 22:5 (1988),  784–788
  23. REDUCTION OF THRESHOLD CURRENT-DENSITY IN GAAS-ALGAAS DHS QUANTUM-DIMENSIONAL LASERS(JN=52ACM-2,T=300-K) UNDER THE LIMITATION OF A QUANTUM HOLE BY THE SHORT-PERIOD SUPERLATTICE WITH VARIABLE-PITCH

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:19 (1988),  1803–1807
  24. Effect of acoustic phonon pulses on the extrinsic luminescence of semiconductor quantum-well structures

    Fizika Tverdogo Tela, 29:6 (1987),  1843–1847
  25. Intrabarrier Recombination Radiation of GaAs$-$Al$_{0.4}$Ga$_{0.6}$As Multilayer Structures with Quantum Wells

    Fizika i Tekhnika Poluprovodnikov, 20:7 (1986),  1184–1189
  26. Intrinsic Luminescence of GaAs$-$Al$_{x}$Ga$_{1-x}$As Sharp HelerojimcLiou

    Fizika i Tekhnika Poluprovodnikov, 20:2 (1986),  353–356
  27. Lasers based on heterostructures with active areas limited by multilayered lattices

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:9 (1986),  562–565
  28. EFFECT OF GROWTH-CONDITIONS ON THE HUM ADDITIONS IN GAAS ALLOYED LAYERS GROWN BY MBE METHODS

    Zhurnal Tekhnicheskoi Fiziki, 55:1 (1985),  142–147
  29. Galvanomagnetic Effects in $N$-Al$_{0.3}$Ga$_{0.7}$As/GaAs Heterostructures under high Level Doped

    Fizika i Tekhnika Poluprovodnikov, 19:7 (1985),  1199–1203
  30. Intrinsic and Impurity Luminescence in GaAs$-$AlGaAs Structures with Quantum Wells

    Fizika i Tekhnika Poluprovodnikov, 19:4 (1985),  715–721
  31. Effect of Growth Conditions on the Implantation of Background Impurities into Undoped GaAs Epitaxial Layers Grown by the Method of Molecular-Beam Epitaxy

    Fizika i Tekhnika Poluprovodnikov, 18:2 (1984),  270–274
  32. Оже-профили состава резких гетеропереходов, выращенных методом молекулярно-пучковой эпитаксии

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:12 (1983),  751–754

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