Kozhukhov Anton Sergeyevich

Publications in Math-Net.Ru

1. Determination of the AlN nucleation layer thickness formed on the Al$_2$O$_3$ (0001) surface during nitridation process by XPS and IR spectroscopy
   
   Fizika i Tekhnika Poluprovodnikov, 56:8 (2022),  734–741
2. Transformation of N-polar inversion domains from AlN buffer layers during the growth of AlGaN layers
   
   Fizika i Tekhnika Poluprovodnikov, 56:7 (2022),  677–684
3. GaAs/AlGaAs- and InGaAs/AlGaAs heterostructures for high-power semiconductor infrared emitters
   
   Zhurnal Tekhnicheskoi Fiziki, 91:11 (2021),  1727–1731
4. Preparation atomically clean and structurally ordered surfaces of epitaxial CdTe films for subsequent epitaxy
   
   Fizika i Tekhnika Poluprovodnikov, 55:9 (2021),  748–753
5. Forming the GaN nanocrystals on the graphene-like $g$-AlN and $g$-Si$_{3}$N$_{3}$ surface
   
   Fizika Tverdogo Tela, 61:12 (2019),  2327–2332
6. Undoped high-resistance GaN buffer layer for AlGaN/GaN high-electron-mobility transistors
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:15 (2019),  21–24
7. Local anodic oxidation of thin GeO films and formation of nanostructures based on them
   
   Fizika Tverdogo Tela, 60:4 (2018),  696–700
8. Formation of a graphene-like SiN layer on the surface Si(111)
   
   Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1407–1413
9. Effect of the sapphire-nitridation level and nucleation-layer enrichment with aluminum on the structural properties of AlN layers
   
   Fizika i Tekhnika Poluprovodnikov, 52:6 (2018),  643–650
10. Thermal smoothing and roughening of GaAs surfaces: experiment and Monte Carlo simulation
    
    Fizika i Tekhnika Poluprovodnikov, 52:5 (2018),  514
11. AlInAs quantum dots
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 105:2 (2017),  93–99
12. Reversible electrochemical modification of the surface of a semiconductor by an atomic-force microscope probe
    
    Fizika i Tekhnika Poluprovodnikov, 51:4 (2017),  443–445
13. Indium nanowires at the silicon surface
    
    Fizika i Tekhnika Poluprovodnikov, 50:7 (2016),  918–920
14. Increase in the diffusion length of minority carriers in Al$_x$Ga$_{1-x}$N ($x$ = 0–0.1) fabricated by ammonia molecular beam epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 49:10 (2015),  1329–1334
15. Optical and electrical properties of silicon nanopillars
    
    Fizika i Tekhnika Poluprovodnikov, 49:7 (2015),  961–965
16. Efficient single-photon emitters based on Bragg microcavities containing selectively positioned InAs quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 49:1 (2015),  35–40
17. Study of the morphology and optical properties of anodic oxide layers on InAs (111)III
    
    Fizika i Tekhnika Poluprovodnikov, 47:4 (2013),  532–537
18. Folding of acoustic-phonon modes in GaAs/AlAs (311)A superlattices in the direction perpendicular to nanofacets
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 95:2 (2012),  76–79
19. Stability of the (0001) surface of the Bi$^2$Se$^3$ topological insulator
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 94:6 (2011),  500–503