Golyashov Vladimir Andreevich

Publications in Math-Net.Ru

1. Indium interaction with the Bi$_2$Se$_3$(0001) surface under the low-temperature deposition
   
   Fizika i Tekhnika Poluprovodnikov, 58:11 (2024),  606–611
2. $\beta\Longleftrightarrow\beta'$ phase transition with temperature hysteresis in In$_2$Se$_3$ films
   
   Fizika i Tekhnika Poluprovodnikov, 58:7 (2024),  370–375
3. Electronic structure of janus layers based on Ti$_{1-y}$Cr$_y$(Se$_{1-x}$S$_x$)$_2$
   
   Fizika i Tekhnika Poluprovodnikov, 58:7 (2024),  365–369
4. Passivation of CdHgTe surface using low-temperature plasma-enhanced atomic layer deposition of HfO$_2$
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:16 (2024),  7–10
5. Oxide/InAs(001) interface passivation with fluorine
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:5 (2023),  6–9
6. Photosensitivity of a metal-insulator-semiconductor field-effect transistor based on PbSnTe:In film with a composition close to the bands inversion
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:3 (2023),  22–25
7. Mixed type of the magnetic order in intrinsic magnetic topological insulators Mn(Bi,Sb)$_2$Te$_4$
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 116:11 (2022),  793–800
8. Electronic structure of magnetic topological insulators Mn(Bi$_{1-x}$Sb$_{x})_2$Te$_4$ with various concentration of sb atoms
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 115:5 (2022),  315–321
9. MIS transistor based on PbSnTe : In film with an Al$_2$O$_3$ gate dielectric
   
   Fizika i Tekhnika Poluprovodnikov, 56:2 (2022),  243–249
10. Topology of PbSnTe:In layers versus indium concentration
    
    Zhurnal Tekhnicheskoi Fiziki, 91:6 (2021),  1040–1044
11. Features of MIS structures based on insulating PbSnTe:In films with the composition in the vicinity of the band inversion related to their ferroelectric properties
    
    Fizika i Tekhnika Poluprovodnikov, 54:10 (2020),  1122–1128
12. Energy-gap opening near the Dirac point after the deposition of cobalt on the (0001) surface of the topological insulator BiSbTeSe$_{2}$
    
    Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  859–864
13. Modification of the surface properties of PbSnTe$\langle$In$\rangle$ epitaxial layers with composition near band inversion
    
    Zhurnal Tekhnicheskoi Fiziki, 89:11 (2019),  1795–1799
14. Surface сonductivity dynamics in PbSnTe : In films in the vicinity of a band inversion
    
    Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1207–1211
15. Formation of anodic layers on InAs (111)III. Study of the chemical composition
    
    Fizika i Tekhnika Poluprovodnikov, 46:4 (2012),  569–575
16. Stability of the (0001) surface of the Bi$^2$Se$^3$ topological insulator
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 94:6 (2011),  500–503