Trapeznikova Irina Nikolaevna

Publications in Math-Net.Ru

1. Photoluminescence and photoconductivity of lead halide perovskite films modified with mixed cellulose esters
   
   Zhurnal Tekhnicheskoi Fiziki, 91:6 (2021),  987
2. Formation of $ncl$-Si in the amorphous matrix $a$-SiO$_{x}$ : H located near the anode and on the cathode, using a time-modulated DC plasma with the (SiH$_4$–Ar–O$_{2}$) gas phase ($C_{\mathrm{O}_2}$ = 21.5 мол%)
   
   Fizika i Tekhnika Poluprovodnikov, 53:11 (2019),  1547–1556
3. Sensing amorphous/crystalline silicon surface passivation by attenuated total reflection infrared spectroscopy of amorphous silicon on glass
   
   Fizika i Tekhnika Poluprovodnikov, 53:8 (2019),  1140
4. An optical study of disordering in cadmium mercury telluride solid solutions
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:11 (2019),  24–27
5. Effect of the temporal characteristics of modulated DC plasma with the (SiH$_{4}$–Ar–O$_{2}$) gas phase on ncl-Si growth in an$a$-SiO$_{x}$:H matrix (C$_{\mathrm{O}_2}$ = 15.5 mol %)
   
   Fizika i Tekhnika Poluprovodnikov, 52:10 (2018),  1137–1144
6. Field-effect transistors with high mobility and small hysteresis of transfer characteristics based on CH$_{3}$NH$_{3}$PbBr$_{3}$ films
   
   Fizika Tverdogo Tela, 59:12 (2017),  2457–2461
7. Surface texture of single-crystal silicon oxidized under a thin V$_{2}$O$_{5}$ layer
   
   Fizika i Tekhnika Poluprovodnikov, 51:1 (2017),  105–110
8. Field-effect transistor structures on the basis of poly(3-hexylthiophene), fullerene derivatives [60]PCBM, [70]PCBM, and nickel nanoparticles
   
   Fizika Tverdogo Tela, 58:9 (2016),  1818–1825
9. On the formation of silicon nanoclusters ncl-Si in a hydrogenated amorphous silicon suboxide matrix $a$-SiO$_{x}$:H (0 $<x<$ 2), with time-modulated dc magnetron plasma
   
   Fizika i Tekhnika Poluprovodnikov, 50:4 (2016),  538–548
10. Switching and memory effects in composite films of semiconducting polymers with particles of graphene and graphene oxide
    
    Fizika Tverdogo Tela, 57:8 (2015),  1639–1644
11. Photoinduced defects in $a$-Si:H Films and InGaN/GaN multiple quantum well structures doped with Eu, Sm, and Eu + Sm
    
    Zhurnal Tekhnicheskoi Fiziki, 85:9 (2015),  97–104
12. Formation of donor centers upon the annealing of silicon light-emitting structures implanted with oxygen ions
    
    Fizika i Tekhnika Poluprovodnikov, 49:3 (2015),  418–420
13. Temperature and concentration dependences of the photoluminescence of MEH-PPV polymer composite films with ZnO nanoparticles
    
    Fizika Tverdogo Tela, 56:2 (2014),  399–405
14. Luminescence of amorphous silicon nanoclusters
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 94:5 (2011),  402–405
15. Comprehensive study of the conditions for obtaining hydrogenated amorphous erbium- and oxygen-doped silicon suboxide films, $a$-SiO$_x$:H$\langle$Er,O$\rangle$, by dc-magnetron deposition
    
    Fizika i Tekhnika Poluprovodnikov, 45:12 (2011),  1667–1677
16. The effect of Fe, Cu, and Si impurities on the formation of emission spectra in bulk ZnO crystals
    
    Fizika i Tekhnika Poluprovodnikov, 44:4 (2010),  445–451
17. Effect of temperature annealing on the properties of $a$-$\mathrm{Si}_{1-x}\mathrm{C}_{x}$ films $(0<x \leqslant 1)$
    
    Fizika Tverdogo Tela, 34:1 (1992),  326–328