Undalov Yury Konstantinovich

Publications in Math-Net.Ru

1. Formation of $ncl$-Si in the amorphous matrix $a$-SiO$_{x}$ : H located near the anode and on the cathode, using a time-modulated DC plasma with the (SiH$_4$–Ar–O$_{2}$) gas phase ($C_{\mathrm{O}_2}$ = 21.5 мол%)
   
   Fizika i Tekhnika Poluprovodnikov, 53:11 (2019),  1547–1556
2. Effect of the temporal characteristics of modulated DC plasma with the (SiH$_{4}$–Ar–O$_{2}$) gas phase on ncl-Si growth in an$a$-SiO$_{x}$:H matrix (C$_{\mathrm{O}_2}$ = 15.5 mol %)
   
   Fizika i Tekhnika Poluprovodnikov, 52:10 (2018),  1137–1144
3. On the formation of silicon nanoclusters ncl-Si in a hydrogenated amorphous silicon suboxide matrix $a$-SiO$_{x}$:H (0 $<x<$ 2), with time-modulated dc magnetron plasma
   
   Fizika i Tekhnika Poluprovodnikov, 50:4 (2016),  538–548
4. Composition and optical properties of amorphous $a$-SiO$_x$ :H films with silicon nanoclusters
   
   Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  212–217
5. Silicon nanoclusters ncl-Si in a hydrogenated amorphous silicon suboxide matrix $a$-SiO$_x$ : H (0 $<x<$ 2)
   
   Fizika i Tekhnika Poluprovodnikov, 49:7 (2015),  887–898
6. Peculiarities of the electronic structure and phase composition of amorphous (SiO$_2$)$_x$($a$-Si:H)$_{x-1}$ composite films according to X-ray spectroscopy data
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:20 (2015),  82–88
7. Thermally induced defect photoluminescence in hydrogenated amorphous silicon
   
   Fizika Tverdogo Tela, 53:2 (2011),  240–246
8. Luminescence of amorphous silicon nanoclusters
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 94:5 (2011),  402–405
9. Comprehensive study of the conditions for obtaining hydrogenated amorphous erbium- and oxygen-doped silicon suboxide films, $a$-SiO$_x$:H$\langle$Er,O$\rangle$, by dc-magnetron deposition
   
   Fizika i Tekhnika Poluprovodnikov, 45:12 (2011),  1667–1677
10. PHOTOELECTRIC PROPERTIES OF CDGEP2 STRUCTURES AND ITS INP BINARY ANALOG
    
    Zhurnal Tekhnicheskoi Fiziki, 60:9 (1990),  174–176
11. PHOTOVOLTAIC EFFECT IN PARA-CDO-CDGEP2 BARRIERS
    
    Zhurnal Tekhnicheskoi Fiziki, 58:7 (1988),  1415–1419
12. Поляризационная фоточувствительность анизотипных структур $n$-SiO$_{2}{-}p$-CdGeP$_{2}\langle\text{Ga}\rangle$
    
    Fizika i Tekhnika Poluprovodnikov, 22:6 (1988),  1115–1116
13. Дихроизм кристаллов MnIn$_{2}$Te$_{4}$ и фотоплеохроизм структур на их основе
    
    Fizika i Tekhnika Poluprovodnikov, 22:6 (1988),  1101–1104
14. PHOTOELECTRIC PROPERTIES OF THE PARA-SNO2-PARA-CDGEP2(IN) ISO-TYPE HETEROJUNCTION
    
    Zhurnal Tekhnicheskoi Fiziki, 56:10 (1986),  1989–1993