Poklonskii Nikolay Aleksandrovich

Publications in Math-Net.Ru

1. Charge accumulation and relaxation in active mode of Al/Si$_3$N$_4$/$n$-Si and Al/Si$_3$N$_4$/SiO$_2$/$n$-Si device structures
   
   Zhurnal Tekhnicheskoi Fiziki, 95:11 (2025),  2221–2228
2. Analytical description of hopping electrical conductivity of compensated semiconductors and calculations on the example of $p$-Ge : Ga
   
   Zhurnal Tekhnicheskoi Fiziki, 94:6 (2024),  838–848
3. Dependence of the energy of emission molecular orbitals in short open carbon nanotubes on the electric field
   
   Fizika Tverdogo Tela, 64:3 (2022),  359–364
4. Maximum hopping direct current conductivity via hydrogen-like impurities in semiconductors
   
   Fizika i Tekhnika Poluprovodnikov, 56:11 (2022),  1046–1054
5. Spatial and hyperfine characteristics of SiV$^-$ and SiV$^0$ color centers in diamond: DFT simulation
   
   Fizika i Tekhnika Poluprovodnikov, 54:12 (2020),  1391
6. Quantum chemical calculations of carbon nanoscroll energy rolled from zigzag graphene nanoribbon
   
   Fizika i Tekhnika Poluprovodnikov, 54:12 (2020),  1389
7. Quasi-classical model of the static electrical conductivity of heavily doped degenerate semiconductors at low temperatures
   
   Fizika i Tekhnika Poluprovodnikov, 52:6 (2018),  544–553
8. The energy characteristics and structure of carbon nanoscrolls
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:14 (2017),  55–63
9. Role of electrostatic fluctuations in doped semiconductors upon the transition from band to hopping conduction (by the example of $p$-Ge:Ga)
   
   Fizika i Tekhnika Poluprovodnikov, 50:6 (2016),  738–750
10. A quasi-classical model of the Hubbard gap in lightly compensated semiconductors
    
    Fizika i Tekhnika Poluprovodnikov, 50:3 (2016),  302–312
11. Impedance of Si/SiO$_2$ composites in the vicinity of the percolation threshold
    
    Fizika Tverdogo Tela, 53:3 (2011),  433–437
12. Equivalent circuit of silicon diodes subjected to high-fluence electron irradiation
    
    Zhurnal Tekhnicheskoi Fiziki, 80:10 (2010),  74–82
13. Influence of radiation defects on electrical losses in silicon diodes irradiated with electrons
    
    Fizika i Tekhnika Poluprovodnikov, 44:3 (2010),  397–401
14. Inverted EPR signal from nitrogen defects in a synthetic diamond single crystal at room temperature
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 80:12 (2004),  880–883