Kryzhkov Denis Igorevich

Publications in Math-Net.Ru

1. The exciton excitations and relaxation processes in low-dimensional semiconductor heterostructures with quantum wells
   
   Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1720–1724
2. Structural and optical properties of GaAsSb QW heterostructures grown by laser deposition
   
   Fizika i Tekhnika Poluprovodnikov, 49:1 (2015),  112–116
3. Absorption cross section for the $^4I_{15/2}\to^4I_{13/2}$ transition of Er$^{3+}$ in Si:Er:O/SOI epitaxial layers
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 100:12 (2014),  913–918
4. Specific features of the nonradiative relaxation of Er$^{3+}$ ions in epitaxial Si structures
   
   Fizika i Tekhnika Poluprovodnikov, 48:12 (2014),  1626–1631
5. Investigation of GaAs/AlGaAs quantum cascade structures by optical methods based on hot luminescence in the near-infrared range
   
   Fizika i Tekhnika Poluprovodnikov, 48:11 (2014),  1499–1502
6. Spectral-kinetic properties of heterostructures with GaAsSb/InGaAs/GaAs-based quantum wells emitting in the range of 1.0–1.2 $\mu$m
   
   Fizika i Tekhnika Poluprovodnikov, 47:11 (2013),  1517–1520
7. Model of photoluminescence from ion-synthesized silicon nanocrystal arrays embedded in a silicon dioxide matrix
   
   Zhurnal Tekhnicheskoi Fiziki, 82:12 (2012),  63–66
8. Diagnostics of quantum cascade structures by optical methods in the near infrared region
   
   Fizika i Tekhnika Poluprovodnikov, 46:11 (2012),  1440–1443
9. Mechanism of the subband excitation of photoluminescence from erbium ions in silicon under high-intensity optical pumping
   
   Fizika i Tekhnika Poluprovodnikov, 46:11 (2012),  1435–1439
10. Determination of the heterojunction type in structures with GaAsSb/GaAs quantum wells with various antimony fractions by optical methods
    
    Fizika i Tekhnika Poluprovodnikov, 46:11 (2012),  1402–1407
11. Determination of the excitation cross section of photoluminescence from an Er ion in the case of homogeneous and inhomogeneous optical excitation
    
    Fizika i Tekhnika Poluprovodnikov, 46:11 (2012),  1398–1401
12. Picosecond photoluminescence dynamics in an InGaAs/GaAs quantum-well heterostructure
    
    Fizika i Tekhnika Poluprovodnikov, 46:7 (2012),  940–943
13. Near-field mechanism of photoluminescence excitation in quantum well heterostructures
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 94:11 (2011),  890–894
14. Optical detection of an electric field in a GaAs/AlGaAs $n{-}i{-}n$ heterostructure with double quantum wells
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 93:7 (2011),  437–441
15. Specific features of the mechanisms of excitation of erbium photoluminescence in epitaxial Si:Er/Si structures
    
    Fizika i Tekhnika Poluprovodnikov, 44:11 (2010),  1519–1522