Aleksandrov Petr Anatol'evich

Publications in Math-Net.Ru

1. Modeling of mechanical properties of highly inhomogeneous systems under external action
   
   Zhurnal Tekhnicheskoi Fiziki, 89:7 (2019),  1059–1066
2. Estimation of the efficiency of the introduction of a porous layer into a silicon-on-sapphire structure substrate to enhance the reliability of devices under irradiation
   
   Fizika i Tekhnika Poluprovodnikov, 50:8 (2016),  1128–1132
3. On the generation of charge-carrier recombination centers in the sapphire substrates of silicon-on-sapphire structures
   
   Fizika i Tekhnika Poluprovodnikov, 49:8 (2015),  1124–1128
4. Recrystallization of silicon-on-sapphire structures at various amorphization-ion-beam energies
   
   Fizika i Tekhnika Poluprovodnikov, 47:2 (2013),  264–266
5. Measuring speed of the light emitted by an ultrarelativistic source
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 94:5 (2011),  374–376
6. Direct experimental demonstration of the second special relativity postulate: the speed of light is independent of the speed of the source
   
   UFN, 181:12 (2011),  1345–1351
7. Crystalline quality improvement in silicon films on sapphire using recrystallization from the silicon-sapphire interface
   
   Fizika i Tekhnika Poluprovodnikov, 44:10 (2010),  1433–1435
8. Triple crystal X-ray diffractometric study of the effect of low temperature annealing on the structural parameters of juvenile surfaces of $\mathrm{CsDSO}_{4}$ and $\mathrm{CsH}_{2}\mathrm{PO}_{4}$ single crystals
   
   Fizika Tverdogo Tela, 33:12 (1991),  3529–3534
9. X-ray diffraction study of $\mathrm{Si}$–$\mathrm{NaNO}_{2}$ interface
   
   Fizika Tverdogo Tela, 33:7 (1991),  2221–2222
10. Высокотемпературная ионная имплантация мышьяка в кремний
    
    Fizika i Tekhnika Poluprovodnikov, 24:6 (1990),  1132–1133
11. SYNTHESIS OF SI3N4 AMORPHOUS FILMS DURING NITROGEN ION-IMPLANTATION TO SILICON
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:23 (1990),  43–45
12. Исследование распределения аморфной и кристаллической фазы ионно-синтезированного SiC в Si
    
    Fizika i Tekhnika Poluprovodnikov, 22:4 (1988),  731–732
13. Study of the Formation of $\beta$-SiC Monocrystalline Layers on Si by the Method of Highly Intense Ionic Doping
    
    Fizika i Tekhnika Poluprovodnikov, 21:5 (1987),  920–922
14. Structure of the single crystal near-surface layer after the ion-chemical etching
    
    Dokl. Akad. Nauk SSSR, 289:5 (1986),  1120–1123
15. Synthesis of Monocrystalline Silicon Carbide by Single-Step Equipment of Highly Intense Ion Doping
    
    Fizika i Tekhnika Poluprovodnikov, 20:1 (1986),  149–152
16. Three-crystal X-ray diffractometry in the Bragg–Laue sliding geometry
    
    Dokl. Akad. Nauk SSSR, 281:3 (1985),  581–584
17. Three-crystal diffractometry in grazing Bragg-Laue geometry with normal scanning
    
    Fizika Tverdogo Tela, 27:8 (1985),  2274–2281
18. Diffraction of Mossbauer radiation at total external reflection
    
    Fizika Tverdogo Tela, 25:4 (1983),  1003–1007