Cherkov Alexandr Glebovich

Publications in Math-Net.Ru

1. Redistribution of erbium and oxygen recoil atoms and the structure of silicon thin surface layers formed by high-dose argon implantation through Er and SiO$_{2}$ surface films
   
   Fizika i Tekhnika Poluprovodnikov, 52:13 (2018),  1589–1596
2. Diffusion-Controlled growth of Ge nanocrystals in SiO$_{2}$ films under conditions of ion synthesis at high pressure
   
   Fizika i Tekhnika Poluprovodnikov, 51:10 (2017),  1414–1419
3. Specific features of the ion-beam synthesis of Ge nanocrystals in SiO$_{2}$ thin films
   
   Fizika i Tekhnika Poluprovodnikov, 51:9 (2017),  1289–1294
4. Ion-beam synthesis of InSb nanocrystals in the buried SiO$_2$ layer of a silicon-on-insulator structure
   
   Fizika i Tekhnika Poluprovodnikov, 48:9 (2014),  1228–1233
5. Crystallization induced by thermal annealing with millisecond pulses in silicon-on-insulator films implanted with high doses of hydrogen ions
   
   Fizika i Tekhnika Poluprovodnikov, 47:5 (2013),  591–597
6. Influence of irradiation with swift heavy ions on multilayer Si/SiO$_2$ heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 47:3 (2013),  334–339
7. Femtosecond pulse crystallization of thin amorphous hydrogenated films on glass substrates using near ultraviolet laser radiation
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 93:10 (2011),  665–668
8. The effect of composition on the formation of light-emitting Si nanostructures in SiO$_x$ layers on irradiation with swift heavy ions
   
   Fizika i Tekhnika Poluprovodnikov, 45:3 (2011),  419–424
9. Light-emitting Si nanostructures formed in SiO$_2$ on irradiation with swift heavy ions
   
   Fizika i Tekhnika Poluprovodnikov, 44:4 (2010),  544–549
10. Precipitation of boron in silicon on high-dose implantation
    
    Fizika i Tekhnika Poluprovodnikov, 44:3 (2010),  302–305
11. Phase transitions in $a$-Si:H films on a glass irradiated by high-power femtosecond pulses: Manifestation of nonlinear and nonthermal effects
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 86:2 (2007),  128–131