Shengurov Vladimir Gennad'evich

Publications in Math-Net.Ru

1. Ge/Si(001) heteroepitaxial layers doped in the HW CVD process by impurity evaporation from a sublimating Ge source
   
   Fizika i Tekhnika Poluprovodnikov, 57:9 (2023),  719–724
2. Resistive switching of memristors base on epitaxial structures $p$-Si/$p$-Ge/$n^+$-Si(001) with Ru and Ag electrodes
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:1 (2023),  5–8
3. Distribution of charge carrier concentrations in epitaxial Ge and GeSn layers grown on $n^+$-Si(001) substrates
   
   Fizika i Tekhnika Poluprovodnikov, 56:9 (2022),  839–843
4. Investigation of the effect of optical radiation on resistive switching of MIS-structures based on ZrO$_2$(Y) on Si(001) substrates with Ge nanoislands
   
   Fizika i Tekhnika Poluprovodnikov, 56:8 (2022),  723–727
5. Comparison of А$^{\mathrm{III}}$В$^{\mathrm{V}}$ heterostructures grown on Ge/Si, Ge/SOI, and GaAs
   
   Fizika i Tekhnika Poluprovodnikov, 55:11 (2021),  978–988
6. Demonstration of resistive switching effect in separate filaments in Ag/Ge/Si memristor structures by conductive atomic force microscopy
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:15 (2021),  23–26
7. Effect of the algaas seed layer composition on antiphase domains formation in (Al)GaAs structures grown by vapor-phase epitaxy on Ge/Si(100) substrates
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:8 (2021),  37–40
8. Resistive switching in metal–oxide–semiconductor structures with GeSi nanoislands on a silicon substrate
   
   Zhurnal Tekhnicheskoi Fiziki, 90:10 (2020),  1741–1749
9. Resistive switching in memristors based on Ag/Ge/Si heterostructures
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:2 (2020),  44–46
10. Enhanced photoluminescence of heavily doped $n$-Ge/Si(001) layers
    
    Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1293–1296
11. Studies of the cross section and photoluminescence of a GaAs layer grown on a Si/Al$_{2}$O$_{3}$ substrate
    
    Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1271–1274
12. Tunnel diodes based on $n^{+}$-Ge/$p^{+}$-Si(001) epitaxial structures grown by the hot-wire chemical vapor deposition
    
    Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1267–1270
13. Effect of pulsed gamma-neutron irradiation on the photosensitivity of Si-based photodiodes with GeSi nanoislands and Ge epitaxial layers
    
    Fizika i Tekhnika Poluprovodnikov, 52:6 (2018),  651–655
14. Ballistic hole emission spectroscopy of self-assembled GeSi/Si(001) nanoislands
    
    Fizika i Tekhnika Poluprovodnikov, 52:5 (2018),  505
15. Investigation of spatial distribution of photocurrent in the plane of a Si $p$–$n$ photodiode with GeSi nanoislands by scanning near-field optical microscopy
    
    Fizika i Tekhnika Poluprovodnikov, 51:4 (2017),  563–568
16. Stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on GaAs and Ge/Si(001) substrates
    
    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1455–1458
17. Conditions of growth of high-quality relaxed Si$_{1-x}$Ge$_{x}$ layers with a high Ge content by the vapor-phase decomposition of monogermane on a sublimating Si hot wire
    
    Fizika i Tekhnika Poluprovodnikov, 50:9 (2016),  1270–1275
18. Epitaxially grown monoisotopic Si, Ge, and Si$_{1-x}$Ge$_{x}$ alloy layers: production and some properties
    
    Fizika i Tekhnika Poluprovodnikov, 50:3 (2016),  350–353
19. A random telegraph signal in tunneling silicon $p$–$n$ junctions with GeSi nanoislands
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:8 (2016),  94–101
20. Analysis of thickness unevenness of the epitaxial silicon layer during deposition from sublimation sources in a vacuum
    
    University proceedings. Volga region. Physical and mathematical sciences, 2015, no. 4,  93–100
21. Photodetectors on the basis of Ge/Si(001) heterostructures grown by the hot-wire CVD technique
    
    Fizika i Tekhnika Poluprovodnikov, 49:10 (2015),  1411–1414
22. Photodiodes based on self-assembled GeSi/Si(001) nanoisland arrays grown by the combined sublimation molecular-beam epitaxy of silicon and vapor-phase epitaxy of germanium
    
    Fizika i Tekhnika Poluprovodnikov, 49:3 (2015),  399–405
23. Thin single-crystal Ge layers on 2" Si substrates
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:1 (2015),  71–78
24. Stimulated emission from an InGaAs/GaAs/AlGaAs heterostructure grown on a Si substrate
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 100:12 (2014),  900–903
25. Thickness uniformity of silicon layers grown from a sublimation source by molecular-beam epitaxy
    
    Zhurnal Tekhnicheskoi Fiziki, 84:11 (2014),  155–158
26. Si$_{1-x}$Ge$_x$/Si heterostructures grown by molecular-beam epitaxy on silicon-on-sapphire substrates
    
    Fizika i Tekhnika Poluprovodnikov, 48:3 (2014),  417–420
27. Low-temperature growth of silicon epitaxial layers codoped with erbium and oxygen atoms
    
    Fizika i Tekhnika Poluprovodnikov, 47:3 (2013),  410–413
28. Investigation of the local density of states in self-assembled GeSi/Si(001) nanoislands by combined scanning tunneling and atomic-force microscopy
    
    Fizika i Tekhnika Poluprovodnikov, 45:3 (2011),  414–418
29. On the nature of electroluminescence at 1.5 $\mu$m in the breakdown mode of reverse-biased Er-doped silicon $p$–$n$-junction structures grown by sublimation molecular beam epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 45:1 (2011),  87–92
30. Boron doping of Si$_{1-x}$Ge$_x$/Si heterostructures grown by silicon sublimation in germane medium
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:13 (2011),  24–30
31. Confocal Raman microscopy of self-assembled GeSi/Si(001) Islands
    
    Fizika i Tekhnika Poluprovodnikov, 44:11 (2010),  1552–1558
32. Special features of the excitation spectra and kinetics of photoluminescence of the Si$_{1-x}$Ge$_x$:Er/Si structures with relaxed heterolayers
    
    Fizika i Tekhnika Poluprovodnikov, 44:11 (2010),  1527–1532
33. Population inversion of the energy levels of erbium ions induced by excitation transfer from the semiconductor matrix in Si-Ge based structures
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 81:10 (2005),  614–617