Stepikhova Margarita Vladimirovna

Publications in Math-Net.Ru

1. Enhancement of the luminescence response of subwavelength lattices of Si disks with embedded GeSi quantum dots when switching from a simple lattice to a lattice with a basis
   
   Fizika i Tekhnika Poluprovodnikov, 59:10 (2025),  614–619
2. High-Q states in the emission spectra of linear periodic chains of Si nanodisks with embedded GeSi quantum dots
   
   Fizika i Tekhnika Poluprovodnikov, 58:5 (2024),  238–241
3. Luminescent properties of ordered arrays of silicon disk-like resonators with embedded GeSi quantum dots
   
   Fizika i Tekhnika Poluprovodnikov, 57:6 (2023),  414–420
4. Effect of optical excitation conditions on the spectral and temporal characteristics of the radiation from two-dimensional photonic crystals with Ge(Si) nanoislands
   
   Fizika i Tekhnika Poluprovodnikov, 57:4 (2023),  251–258
5. Planar (lateral) light-emitting diodes with Ge(Si) nanoislands embedded in a photonic crystal
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:22 (2023),  12–15
6. Dependence of luminescence properties of the ordered groups of epitaxially grown Ge(Si) nanoislands on the parameters of pit-patterned SOI substrate
   
   Fizika i Tekhnika Poluprovodnikov, 55:12 (2021),  1210–1215
7. Radiative properties of up-conversion coatings formed on the basis of erbium-doped barium titanate xerogels
   
   Fizika i Tekhnika Poluprovodnikov, 55:9 (2021),  713–718
8. Kinetics of the luminescence response of self-assembled Ge(Si) nanoislands embedded in two-dimensional photonic crystals
   
   Fizika i Tekhnika Poluprovodnikov, 54:10 (2020),  1150–1157
9. Enhancement of the luminescence signal from self-assembled Ge(Si) nanoislands due to interaction with the modes of two-dimensional photonic crystals
   
   Fizika i Tekhnika Poluprovodnikov, 54:8 (2020),  822–829
10. Luminescence of spatially ordered self-assembled solitary Ge(Si) nanoislands and their groups incorporated into photonic crystals
    
    Fizika i Tekhnika Poluprovodnikov, 54:8 (2020),  708–715
11. Ordered arrays of Ge(Si) quantum dots embedded in two-dimensional photonic crystals
    
    Fizika i Tekhnika Poluprovodnikov, 53:10 (2019),  1366–1371
12. Study of the structural and emission properties of Ge(Si) quantum dots ordered on the Si(001) surface
    
    Fizika i Tekhnika Poluprovodnikov, 52:9 (2018),  1028–1033
13. Multilayer photosensitive structures based on porous silicon and rare-earth-element compounds: Study of spectral characteristics
    
    Fizika i Tekhnika Poluprovodnikov, 51:3 (2017),  367–371
14. Conditions of growth of high-quality relaxed Si$_{1-x}$Ge$_{x}$ layers with a high Ge content by the vapor-phase decomposition of monogermane on a sublimating Si hot wire
    
    Fizika i Tekhnika Poluprovodnikov, 50:9 (2016),  1270–1275
15. On a silicon-based photonic-crystal cavity for the near-IR region: Numerical simulation and formation technology
    
    Fizika i Tekhnika Poluprovodnikov, 50:8 (2016),  1133–1137
16. Epitaxially grown monoisotopic Si, Ge, and Si$_{1-x}$Ge$_{x}$ alloy layers: production and some properties
    
    Fizika i Tekhnika Poluprovodnikov, 50:3 (2016),  350–353
17. Si$_{1-x}$Ge$_x$/Si heterostructures grown by molecular-beam epitaxy on silicon-on-sapphire substrates
    
    Fizika i Tekhnika Poluprovodnikov, 48:3 (2014),  417–420
18. Low-temperature growth of silicon epitaxial layers codoped with erbium and oxygen atoms
    
    Fizika i Tekhnika Poluprovodnikov, 47:3 (2013),  410–413
19. Electroluminescence at a wavelength of 1.54 $\mu$m in Si:Er/Si structures consisting of a number of $p$–$n$ junctions
    
    Fizika i Tekhnika Poluprovodnikov, 45:11 (2011),  1486–1488
20. Special features of the excitation spectra and kinetics of photoluminescence of the Si$_{1-x}$Ge$_x$:Er/Si structures with relaxed heterolayers
    
    Fizika i Tekhnika Poluprovodnikov, 44:11 (2010),  1527–1532
21. Population inversion of the energy levels of erbium ions induced by excitation transfer from the semiconductor matrix in Si-Ge based structures
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 81:10 (2005),  614–617