Kotel’nikov Igor Nikolaevich

Publications in Math-Net.Ru

1. Zero-bias tunneling anomaly in a two-dimensional electron system with disorder
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 96:9 (2012),  646–650
2. Scattering involving LO phonons in tunneling to the 2D electron system of a delta layer
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 81:9 (2005),  574–577
3. Transition of the near-surface $\delta$ layer in an Al/$\delta$(Si)–GaAs tunnel structure to the insulating state under pressure
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 80:6 (2004),  489–492
4. Tunneling spectroscopy of the electron exchange-correlation interaction in a Schottky barrier in a quantizing magnetic field: $n$-GaAs/Me junctions
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 73:10 (2001),  643–648
5. Influence of $\mathrm{GaAs}$ surface structure before $\mathrm{Si}$ deposition on $\delta$-doping
   
   Dokl. Akad. Nauk, 332:5 (1993),  575–577
6. Characteristic and special features of near-surface $\delta$-doped layer conduction in GaAs under variation of 2D-electron concentration
   
   Fizika i Tekhnika Poluprovodnikov, 26:8 (1992),  1462–1470
7. Фотопроводимость в области циклотронного резонанса двумерного электронного газа в GaAs/AlGaAs при больших факторах заполнения
   
   Fizika i Tekhnika Poluprovodnikov, 24:4 (1990),  635–637
8. POINTED FAST-RESPONSE PHOTODETECTOR OF LASER SUBMILLIMETER EMISSION
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:8 (1989),  8–10
9. Determination of the Parameters of the Band-Bending Range in $n$-GaAs/Metal Transitions Using Tunnel Current–Voltage Characteristics
   
   Fizika i Tekhnika Poluprovodnikov, 21:10 (1987),  1854–1862
10. ANALYSIS OF DIODE SENSITIVITY WITH THE SCHOTTKY-BARRIER TO INFRARED STUDIES
    
    Zhurnal Tekhnicheskoi Fiziki, 56:11 (1986),  2199–2209
11. On tunnelling in metal-semiconductor $n$-$\mathrm{GaAs}/\mathrm{Au}$ junctions with selfconsistent Schottky barrier
    
    Fizika Tverdogo Tela, 27:2 (1985),  401–415