Sokolov Leonid Valentinovich

Publications in Math-Net.Ru

1. Forming dislocation pairs in the Ge/GeSi/Si(001) heterostructure
   
   Fizika Tverdogo Tela, 61:2 (2019),  284–287
2. The reliability of revealing threading dislocations in epitaxial films by structure-sensitive etching
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:20 (2018),  30–36
3. Role of edge dislocations in plastic relaxation of GeSi/Si(001) heterostructures: Dependence of introduction mechanisms on film thickness
   
   Fizika Tverdogo Tela, 57:4 (2015),  746–752
4. Redshift of the absorption edge in tensile-strained germanium layers
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 101:6 (2015),  455–458
5. Specific features of plastic relaxation of a metastable Ge$_x$Si$_{1-x}$ layer buried between a silicon substrate and a relaxed germanium layer
   
   Fizika Tverdogo Tela, 56:2 (2014),  247–253
6. Strained germanium films in Ge/InGaAs/GaAs heterostructures: Formation of edge misfit dislocations at the Ge/InGaAs interface
   
   Fizika Tverdogo Tela, 53:10 (2011),  1903–1909
7. Edge misfit dislocations in Ge$_x$Si$_{1-x}$/Si(001) ($x\sim$ 1) heterostructures: role of buffer Ge$_y$Si$_{1-y}$ $(y<x)$ interlayer in their formation
   
   Fizika Tverdogo Tela, 53:9 (2011),  1699–1705
8. Heteroepitaxy of Ge$_x$Si$_{1-x}$ ($x\sim$ 0.4–0.5) films on Si(001) substrates misoriented to (111): Formation of short edge misfit dislocations alone in the misorientation direction
   
   Fizika Tverdogo Tela, 52:1 (2010),  32–36