Gutkin Andrei Abramovich

Publications in Math-Net.Ru

1. Gallium vacancy – shallows donor complexes in $n$-$\mathrm{GaAs}$ doped with elements of group $\mathrm{VI}$ $\mathrm{Te}$ or $\mathrm{S}$ (Review)
   
   Fizika i Tekhnika Poluprovodnikov, 56:11 (2022),  1021–1045
2. Molecular dynamics study of dimer formation on GaAs (001) surface at low temperatures
   
   Fizika i Tekhnika Poluprovodnikov, 55:2 (2021),  134–137
3. Molecular dynamic modelling of low temperature reconstruction of GaAs (001) surface during nanoindentation process
   
   Fizika i Tekhnika Poluprovodnikov, 53:10 (2019),  1424–1426
4. Моделирование с помощью молекулярной динамики низкотемпературной реконструкции поверхности (001) GaAs в процессе наноиндентирования
   
   Fizika i Tekhnika Poluprovodnikov, 53:8 (2019),  1164
5. Mn$_{\operatorname{Ga}}$ acceptor center in GaAs (review)
   
   Fizika Tverdogo Tela, 60:12 (2018),  2275–2305
6. Anisotropic Jahn–Teller acceptors formed in GaAs by first-group elements with a filled $d$ shell
   
   Fizika i Tekhnika Poluprovodnikov, 51:10 (2017),  1299–1324
7. Effect of the interaction conditions of the probe of an atomic-force microscope with the $n$-GaAs surface on the triboelectrization phenomenon
   
   Fizika i Tekhnika Poluprovodnikov, 49:8 (2015),  1083–1087
8. Analysis of thermal emission processes of electrons from arrays of InAs quantum dots in the space charge region of GaAs matrix
   
   Fizika i Tekhnika Poluprovodnikov, 48:9 (2014),  1186–1191
9. Local triboelectrification of an $n$-GaAs surface using the tip of an atomic-force microscope
   
   Fizika i Tekhnika Poluprovodnikov, 47:9 (2013),  1181–1184
10. Statistical analysis of AFM topographic images of self-assembled quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 47:7 (2013),  921–926
11. Electron states at electrolyte/$n$-GaN and electrolyte/$n$-InGaN interfaces
    
    Fizika i Tekhnika Poluprovodnikov, 46:6 (2012),  775–778
12. Electrochemical capacitance-voltage profiling of the free-carrier concentration in HEMT heterostructures based on InGaAs/AlGaAs/GaAs compounds
    
    Fizika i Tekhnika Poluprovodnikov, 45:6 (2011),  829–835
13. Capacitance-voltage characteristics of the electrolyte-$n$-InN surface and electron states at the interface
    
    Fizika i Tekhnika Poluprovodnikov, 44:8 (2010),  1053–1058
14. Symmetry of $V_{\text{Ga}}\text{Te}_{\text{As}}$ complex in GaAs and its reorientation at low temperatures
    
    Fizika i Tekhnika Poluprovodnikov, 26:7 (1992),  1269–1281
15. Фотолюминесценция, связанная с центрами Au$_{\text{Ga}}$ в GaAs : Au
    
    Fizika i Tekhnika Poluprovodnikov, 25:3 (1991),  508–512
16. An evaluation of the static distortion and nonlinearity of Jahn-Teller interaction for the deep $\mathrm{Cu}_{Ga}$ center in $\mathrm{GaAs}$
    
    Fizika Tverdogo Tela, 32:9 (1990),  2667–2676
17. Ordering dynamics of $\mathrm{Cu}_{Ga}$ Jahn-Teller centers in $\mathrm{GaAs}$ under $[001]$ compression
    
    Fizika Tverdogo Tela, 30:5 (1988),  1459–1465
18. Effect of the hole - $3d$-electron exchange interaction on the properties of the $\mathrm{Mn}$ deep acceptor in gaas
    
    Fizika Tverdogo Tela, 30:3 (1988),  765–774
19. Softening of $p$-$\mathrm{GaAs}$ crystals due to deep Jahn–Teller $\mathrm{Cu}$-centers
    
    Fizika Tverdogo Tela, 28:10 (1986),  2959–2963