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Fedina Ludmila Ivanovna
Publications in Math-Net.Ru
Redistribution of erbium and oxygen recoil atoms and the structure of silicon thin surface layers formed by high-dose argon implantation through Er and SiO
$_{2}$
surface films
Fizika i Tekhnika Poluprovodnikov
,
52
:13 (2018),
1589–1596
Precipitation of boron in silicon on high-dose implantation
Fizika i Tekhnika Poluprovodnikov
,
44
:3 (2010),
302–305
Instability of the distribution of atomic steps on Si(111) upon submonolayer gold adsorption at high temperatures
Pis'ma v Zh. Èksper. Teoret. Fiz.
,
81
:3 (2005),
149–153
Point defect interaction with
$\mathrm{B}$
atoms and
$\mathrm{P}$
atoms in
$\mathrm{Si}$
at a high Frenkel pair creation rate
Fizika Tverdogo Tela
,
32
:1 (1990),
60–68
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Steklov Math. Inst. of RAS
, 2026