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Publications in Math-Net.Ru
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Electrical resistance and magnetoresistance of Cd$_{3}$As$_{2}$–30 mol.% MnAs under high pressure
Fizika Tverdogo Tela, 63:8 (2021), 1146–1150
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Spin-polarized electric current in Cd$_{48.6}$Mn$_{11.4}$As$_{40}$ nanocomposite
Fizika Tverdogo Tela, 63:4 (2021), 427–432
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Magnetic properties of Dirac 3D semimetal Cd$_{3}$As$_{2}$ with MnAs nanogranules at high pressure
Zhurnal Tekhnicheskoi Fiziki, 91:11 (2021), 1674–1677
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Electric and galvanomagnetic properties of Cd$_{3}$As$_{2}$–20 mol % MnAs composite under high pressure
Fizika Tverdogo Tela, 62:6 (2020), 834–838
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The synthesis and investigation of the electrical properties of tricadmium diarsenide with MnAs nanogranules
Zhurnal Tekhnicheskoi Fiziki, 90:7 (2020), 1128–1131
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Specific features of the capacitance–voltage characteristics of a Cu–SiO$_2$–$p$-InSb MIS structure
Fizika i Tekhnika Poluprovodnikov, 51:3 (2017), 383–385
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Effect of uniaxial deformation on the current–voltage characteristic of a $p$-Ge/$n$-GaAs heterostructure
Fizika i Tekhnika Poluprovodnikov, 50:8 (2016), 1075–1076
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Thermoelectric power of $n$-InSb in a transverse quantizing magnetic field
Fizika i Tekhnika Poluprovodnikov, 49:7 (2015), 904–905
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Temperature and magnetic-field dependences of the thermoelectric power of electronic indium antimonide
Fizika i Tekhnika Poluprovodnikov, 48:9 (2014), 1169–1170
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On statistically distributed inhomogeneities according to data on transverse magnetoresistance for the case of atmospheric and uniform pressure in narrow-gap $n$-InSb and $n$-CdSnAs$_2$ semiconductors
Fizika i Tekhnika Poluprovodnikov, 48:7 (2014), 865–867
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A thermally induced junction between impurity-conduction and intrinsic-conduction regions
Fizika i Tekhnika Poluprovodnikov, 45:1 (2011), 48–49
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Study of the $p$-Ge–$n$-GaAs heterojunction under hydrostatic pressure
Fizika i Tekhnika Poluprovodnikov, 44:9 (2010), 1222–1223
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MagnetothermoEMF Mn$_{0.06}$Hg$_{0.94}$Te under uniaxial deformation
Fizika i Tekhnika Poluprovodnikov, 26:11 (1992), 1952–1954
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MagnetothermoEMF of Mn$_{0.18}$Hg$_{0.82}$Te
Fizika i Tekhnika Poluprovodnikov, 26:5 (1992), 915–917
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NEW CLASS OF SEMICONDUCTOR DIODES
Zhurnal Tekhnicheskoi Fiziki, 54:5 (1984), 953–954
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Ibragimkhan Kamilovich Kamilov (on his 80th birthday)
UFN, 186:1 (2016), 107–108
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