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Saidov M S

Publications in Math-Net.Ru

  1. Development of ceramic coatings and application of their infrared radiation

    Comp. nanotechnol., 2016, no. 4,  6–9
  2. Features of synthesis of functional ceramics with a complex of the set properties by a radiation method. Part 5. Mechanism of generation of impulses functional ceramics

    Comp. nanotechnol., 2016, no. 2,  81–93
  3. Liquid-phase epitaxy of the (Si$_2$)$_{1-x-y}$(Ge$_2$)$_x$(GaAs)$_y$ substitutional solid solution (0 $\le x\le$ 0.91, 0 $\le y\le$ 0.94) and their electrophysical properties

    Fizika i Tekhnika Poluprovodnikov, 49:4 (2015),  557–560
  4. Growth of (GaAs)$_{1-x}$(ZnSe)$_x$ solid solution films and investigation of their structural and some photoelectric properties

    Fizika Tverdogo Tela, 53:10 (2011),  1910–1919
  5. Growth of (InSb)$_{1-x}$(Sn$_2$)$_x$ films on GaAs substrates by liquid-phase epitaxy

    Fizika i Tekhnika Poluprovodnikov, 44:7 (2010),  970–977
  6. Реакции центров золота с отрицательной корреляционной энергией в твердых растворах Si$-$Ge

    Fizika i Tekhnika Poluprovodnikov, 23:3 (1989),  525–531
  7. On the Mechanism of Defect Formation in Si$_{1-x}$Ge$_{x}$ Alloys under Electron Irradiation

    Fizika i Tekhnika Poluprovodnikov, 21:3 (1987),  570–573
  8. Electrophysical Properties of Neutron-Doped Si$-$Ge Alloy in the Composition Range from Silicon Side. II. Galvanomagnetic Properties and Inhomogeneities

    Fizika i Tekhnika Poluprovodnikov, 20:11 (1986),  2052–2060
  9. Electrophysical Properties of Neutron-Doped Si$-$Ge Alloy in the Composition Range from Silicon Side. I. Electrophysical Parameters and $\varepsilon$ Conduction

    Fizika i Tekhnika Poluprovodnikov, 20:11 (1986),  2042–2051
  10. Reactions of Gold Centers under Optical Pumping of Silicon–Germanium Solid Solutions

    Fizika i Tekhnika Poluprovodnikov, 20:4 (1986),  745–747
  11. Влияние кристаллографической полярности граней карбида кремния на характеристики сплавных диодов

    Fizika i Tekhnika Poluprovodnikov, 18:8 (1984),  1476–1478
  12. NEUTRON ALLOYING OF SI1-XGEX ALLOYS IN FORMATION AREAS ASIDE FROM SILICON

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:8 (1984),  495–498
  13. О состоянии центров никеля в GaP

    Fizika i Tekhnika Poluprovodnikov, 17:12 (1983),  2205–2208
  14. О механизме фотопроводимости фосфида галлия, компенсированного никелем

    Fizika i Tekhnika Poluprovodnikov, 17:3 (1983),  529–530
  15. Joint impurity distributions in semiconductors

    UFN, 105:4 (1971),  752–753


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