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Yuferev Valentin Stepanovich

Publications in Math-Net.Ru

  1. Импульсные характеристики однопереходных и трёхпереходных фотопреобразователей лазерного излучения

    Optics and Spectroscopy, 133:11 (2025),  1145–1149
  2. Conversion of subnanosecond laser pulses into electric current by multijunction photoconverters: the role of tunnel diodes

    Fizika i Tekhnika Poluprovodnikov, 59:7 (2025),  392–396
  3. Memristor effect in PZT:TiO$_x$ composite film

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:12 (2025),  38–42
  4. Generation of microwave pulses by zero-bias monolithic triple-junction AlGaAs/GaAs $p$–$i$–$n$ photoconverters and modules

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:9 (2025),  27–30
  5. The problem of nonuniqueness of the laser radiation conversion into electric current in multijunction monolithic photoconverters

    Fizika i Tekhnika Poluprovodnikov, 58:10 (2024),  565–568
  6. On the possible non-uniqueness of the conversion of laser radiation into electric current in multijunction monolithic photoconverters

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:1 (2024),  39–42
  7. Development and study of a model of an autonomous energy information station of free space optical communication

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:2 (2023),  21–25
  8. Comparison of characteristics of thin PZT films on Si-on-sapphire and Si substrates

    Fizika Tverdogo Tela, 63:8 (2021),  1076–1083
  9. Modeling the spatial switch-on dynamics of a laser thyristor ($\lambda$ = 905 nm) based on an AlGaAs/InGaAs/GaAs multi-junction heterostructure

    Fizika i Tekhnika Poluprovodnikov, 54:5 (2020),  478–483
  10. Carrier-transport processes in $n^{+}$-GaAs/$n^{0}$-GaAs/$n^{+}$-GaAs isotype heterostructures with a thin wide-gap AlGaAs barrier

    Fizika i Tekhnika Poluprovodnikov, 54:5 (2020),  452–457
  11. Development and study of the $p$–$i$–$n$-диодов GaAs/AlGaAs tunnel diodes for multijunction converters of high-power laser radiation

    Fizika i Tekhnika Poluprovodnikov, 54:3 (2020),  285–291
  12. Specific features of carrier transport in $n^{+}$–$n^{0}$–$n^{+}$ structures with a GaAs/AlGaAs heterojunction at ultrahigh current densities

    Fizika i Tekhnika Poluprovodnikov, 53:6 (2019),  816–823
  13. Transient switch-off of a 4$H$-SiC bipolar transistor from the deep-saturation mode

    Fizika i Tekhnika Poluprovodnikov, 51:9 (2017),  1243–1248
  14. Investigation of the polarization dependence of the transient current in polycrystalline and epitaxial Pb(Zr,Ti)O$_3$ thin films

    Fizika Tverdogo Tela, 56:12 (2014),  2366–2375
  15. Experimental study of the built-in field in intergrain channels of thin ferroelectric Pb(Zr,Ti)O$_3$ films

    Fizika Tverdogo Tela, 55:3 (2013),  485–488
  16. Transient processes in high-voltage silicon carbide bipolar-junction transistors

    Fizika i Tekhnika Poluprovodnikov, 47:8 (2013),  1071–1077
  17. Specific features of the steady-state carrier distribution and holding current in an optically triggered SiC thyristor

    Fizika i Tekhnika Poluprovodnikov, 47:1 (2013),  118–123
  18. Spreading resistance microscopy of polycrystalline and single-crystal ferroelectric films

    Fizika Tverdogo Tela, 54:5 (2012),  944–946
  19. Growing high-quality Bi$_{12}$SiO$_{20}$ crystals of large diameter (85 mm)

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:9 (2012),  74–80
  20. Numerical solution of problems in radiative heat transfer in three-dimensional domains of irregular shape with mirror (Fresnel) boundaries

    TVT, 44:4 (2006),  568–576
  21. Generalization of differential approximation for the calculation of radiation–conduction heat transfer in rectangular domain with transparent mirror-reflecting boundaries

    TVT, 33:6 (1995),  961–966
  22. Radiative heat transfer in a gap between parallel coaxial plane rings: Derivation of approximate semiempirical formulas

    TVT, 31:2 (1993),  262–266
  23. MATHEMATICAL-MODEL OF MULTISCAN .1. GENERAL-THEORY

    Zhurnal Tekhnicheskoi Fiziki, 62:10 (1992),  126–137
  24. INFLUENCE OF SKIN-EFFECT IN RAILTRON ACCELERATOR ON PARAMETERS OF MOVING PLASMA PISTON

    Zhurnal Tekhnicheskoi Fiziki, 62:1 (1992),  83–91
  25. DIFFUSION OF ELECTROMAGNETIC-FIELD IN RANDOM SHAPE CYLINDRIC PARALLEL CONDUCTOR SYSTEMS DURING SHORT CURRENT PULSE OCCURRENCE

    Zhurnal Tekhnicheskoi Fiziki, 61:11 (1991),  23–31
  26. HIGH-TEMPERATURE STAGE OF THERMAL BREAKDOWN OF SEMICONDUCTORS

    Zhurnal Tekhnicheskoi Fiziki, 61:6 (1991),  76–82
  27. Effect of anisotropy of the refractive-index on heat-transfer processes in transparent crystals

    TVT, 27:6 (1989),  1167–1173
  28. OPTICAL-TEMPERATURE AUTOWAVES IN SEMICONDUCTORS

    Zhurnal Tekhnicheskoi Fiziki, 57:6 (1987),  1070–1076
  29. Slow nonisothermal flow of a viscous gas between two coaxial disks

    Prikl. Mekh. Tekh. Fiz., 28:2 (1987),  40–43
  30. ANALYSIS OF NONSTATIONARY PHENOMENA IN THE REACTOR VOLUME DURING THE AL-GA-AS STRUCTURE GROWING PROCESS WITH SHARP MOC HETEROTRANSITIONS BY THE HYDRIDE METHOD

    Zhurnal Tekhnicheskoi Fiziki, 56:2 (1986),  361–366
  31. Unsteady Conditions of Melting and Recrystallization under Laser Combined Action on Semiconductors

    Fizika i Tekhnika Poluprovodnikov, 20:12 (1986),  2178–2182
  32. Fast Ionization Waves in a Semiconductor Related with Superradiation

    Fizika i Tekhnika Poluprovodnikov, 20:7 (1986),  1335–1337
  33. Effect of Minority Charge Carrier Generation on the Capacity Spectroscopy of Surface States in MDS Structures

    Fizika i Tekhnika Poluprovodnikov, 19:10 (1985),  1791–1795
  34. High-Voltage Photon-Injection Transistor Based on a Heterostructure

    Fizika i Tekhnika Poluprovodnikov, 19:5 (1985),  878–884
  35. SOLUTION OF STEFAN LAW FOR CRYSTALS, PULLING FROM A MELT, WITH HORIZONTAL FACETS ON PHASE INTERFACE

    Zhurnal Tekhnicheskoi Fiziki, 54:9 (1984),  1685–1693
  36. Квазистационарный режим плавления при комбинированном лазерном воздействии на полупроводниковые материалы

    Fizika i Tekhnika Poluprovodnikov, 18:10 (1984),  1832–1835
  37. Study of Photon-Diffusion Transfer of Charge Carriers in Straight-Band Semiconductors

    Fizika i Tekhnika Poluprovodnikov, 18:5 (1984),  850–855
  38. CALCULATION OF CASCADE SOLAR ELEMENTS ON THE BASIS OF A3B5 COMPOUNDS

    Zhurnal Tekhnicheskoi Fiziki, 53:10 (1983),  2025–2031
  39. ARSENIDE-GALLIUM TRANSISTORS

    Zhurnal Tekhnicheskoi Fiziki, 53:4 (1983),  763–765
  40. STUDY OF COMPLEMENT P-N-P AND N-P-N CASCADE SOLAR ELEMENTS

    Zhurnal Tekhnicheskoi Fiziki, 53:2 (1983),  320–324
  41. Исследование процесса переключения обратно смещенного $p{-}n$-перехода в высокопроводящее состояние с помощью моделировани на ЭВМ

    Fizika i Tekhnika Poluprovodnikov, 17:10 (1983),  1812–1816
  42. Difference approximations of derivatives, and polynomial splines

    Zh. Vychisl. Mat. Mat. Fiz., 22:5 (1982),  1241–1245
  43. Radiative-conductive heat transfer in a thin semitransparent plate in the guided-wave approximation for a temperature- and frequency-dependent absorption coefficient

    Prikl. Mekh. Tekh. Fiz., 22:1 (1981),  98–103
  44. Local approximation by cubic splines

    Zh. Vychisl. Mat. Mat. Fiz., 21:1 (1981),  5–10
  45. Radiation-conduction heat transfer in a thin semitransparent cylinder in the light-guide approximation

    Prikl. Mekh. Tekh. Fiz., 20:4 (1979),  31–36
  46. A bi-cubic spline interpolation in polar coordinates

    Zh. Vychisl. Mat. Mat. Fiz., 18:6 (1978),  1600–1602
  47. An application of splines to the approximation of discontinuous solutions of ordinary differential equations

    Zh. Vychisl. Mat. Mat. Fiz., 17:4 (1977),  1053–1058

© Steklov Math. Inst. of RAS, 2026