Imamov Erkin Zunnunovich

Publications in Math-Net.Ru

1. Study of electrophysical properties of a solar cell with nano-hetera junctions on a non-crystalline silicon substrate
   
   Comp. nanotechnol., 12:3 (2025),  191–202
2. Electrophysical properties of a solar cell with non-traditional contact structures
   
   Comp. nanotechnol., 10:4 (2023),  110–121
3. Factors of efficient generation of electricity in a solar cell with nanohetero junctions
   
   Comp. nanotechnol., 10:1 (2023),  119–127
4. Modeling of the electrical properties of a solar cell with many nano-hetero junctions
   
   Comp. nanotechnol., 9:4 (2022),  70–77
5. Analysis of the efficiency of a solar cell with nano-dimensional hetero transitions
   
   Comp. nanotechnol., 8:4 (2021),  42–50
6. Mathematical modeling of optimal parameters of atmospheric influence on the properties of the solar module
   
   Comp. nanotechnol., 7:2 (2020),  58–63
7. Solar elements based on noncrystallic silicon with nanostructured impacts
   
   Comp. nanotechnol., 2018, no. 3,  85–90
8. Expansion of the effective absorption spectrum in solar cells with nanoinclusions
   
   Comp. nanotechnol., 2018, no. 1,  155–157
9. Analysis of the role of nano-objects in the cheaper silicon solar cells
   
   Comp. nanotechnol., 2017, no. 3,  14–17
10. Unique opportunity to create cheap but effective silicon solar cells
    
    Comp. nanotechnol., 2017, no. 1,  61–64
11. Unique opportunity to create cheap but effective silicon solar cells
    
    Comp. nanotechnol., 2017, no. 1,  56–60
12. The difference between the contact structure with nanosize inclusions from the semiconductor photodiodes
    
    Comp. nanotechnol., 2016, no. 3,  203–207
13. The difference between the contact structure with nanosize inclusions from the semiconductor photodiodes
    
    Comp. nanotechnol., 2016, no. 3,  196–202
14. The teoretical model of new contact structure «nanoobject-semiconductor»
    
    Comp. nanotechnol., 2015, no. 4,  51–63
15. Electrophysical properties of the “nano-object-semiconductor” new contact structure
    
    Zhurnal Tekhnicheskoi Fiziki, 85:5 (2015),  110–115
16. Identification of deep level symmetry from the spectral response of photoionization cross section
    
    Fizika Tverdogo Tela, 33:3 (1991),  817–819
17. Effect of deep center charge on optical transitions into the valence band II. Comparison with experiment
    
    Fizika Tverdogo Tela, 33:3 (1991),  730–734
18. Резонанс Фано эффекта увлечения электронов фотонами в полупроводниках
    
    Fizika i Tekhnika Poluprovodnikov, 24:12 (1990),  2193–2197
19. Multiphonon recombination via deep impurity centers in nondirect gap semiconductors
    
    Fizika Tverdogo Tela, 31:3 (1989),  211–217
20. Энергетический спектр многозарядных примесных центров в кубических полупроводниках
    
    Fizika i Tekhnika Poluprovodnikov, 23:7 (1989),  1193–1198
21. EHect of Hole Drag by Light under Рhotoionization of Deep Acceptors in Cubic Semiconductors
    
    Fizika i Tekhnika Poluprovodnikov, 20:4 (1986),  726–729
22. Account of continuous spectrum perturbated wave functions in impurity absorption
    
    Fizika Tverdogo Tela, 27:5 (1985),  1492–1498
23. Effects of scattering on shallow neutral center on transport phenomena at low temperatures
    
    Fizika Tverdogo Tela, 27:1 (1985),  69–76
24. Photoionization cross-section for $h$-center-conduction band transition
    
    Fizika Tverdogo Tela, 26:6 (1984),  1877–1879
25. Ток увлечения электронов при двухфотонной ионизации глубоких примесных центров в полупроводниках
    
    Fizika i Tekhnika Poluprovodnikov, 18:8 (1984),  1417–1421
26. Особенности поглощения света глубокими примесными центрами в тонких полупроводниковых слоях
    
    Fizika i Tekhnika Poluprovodnikov, 17:7 (1983),  1235–1241