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Terukov E I

Publications in Math-Net.Ru

  1. Исследование температурной зависимости световых вольт-амперных характеристик кремниевых гетероструктурных солнечных элементов

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 52:6 (2026),  27–30
  2. On sputter damage of silicon heterojunction solar cells and its recovery by illuminated annealing

    Fizika i Tekhnika Poluprovodnikov, 59:1 (2025),  53
  3. Manifestation of the electric field screening effect in the process of generation of terahertz radiation in $p$–$n$-heterostructures $a$-Si:H/$a$-SiC:H/$c$-Si at photoexcitation by ultrashort laser pulses

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:10 (2025),  22–26
  4. Symmetry of the local environment of germanium atoms in amorphous Ge$_2$Sb$_2$Te$_5$ films

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:9 (2025),  11–13
  5. Spectral and kinetic non-equivalent site distribution of Ce$^{3+}$ and Eu$^{2+}$ ions in borosilicate glasses

    Fizika Tverdogo Tela, 66:3 (2024),  432
  6. Mössbauer study of zinc impurity atoms in alkali metal and copper halides

    Fizika Tverdogo Tela, 66:1 (2024),  51–55
  7. Semi-flexible photovoltaic modules based on silicon HJT cells

    Zhurnal Tekhnicheskoi Fiziki, 94:10 (2024),  1707–1712
  8. Impedance spectroscopy study of tandem solar cells based on $c$-Si with a top layer perovskite nanocrystals CsPbBr$_3$ and CsPbI$_3$

    Zhurnal Tekhnicheskoi Fiziki, 94:4 (2024),  638–645
  9. Dendritic structural inhomogeneities in thin Cs$_{0.2}$FA$_{0.8}$PbI$_{2.93}$Cl$_{0.07}$ layers for perovskite solar cells

    Fizika i Tekhnika Poluprovodnikov, 58:11 (2024),  629–635
  10. Study of the influence of electron beam irradiation on the photoelectric and electrophysical properties of silicon HJT solar cells

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:2 (2024),  23–27
  11. Excitation of terahertz radiation in $p$–$n$-heterostructures based on $a$-Si:H/$c$-Si

    Fizika Tverdogo Tela, 65:5 (2023),  848–852
  12. Investigation of radiation resistance of heterostructure silicon solar cells

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:16 (2023),  18–21
  13. Investigation of sodium and copper halides by the method of Mossbauer spectroscopy on the isotope $^{67}$Zn

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:14 (2023),  43–46
  14. Development and study of a model of an autonomous energy information station of free space optical communication

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:2 (2023),  21–25
  15. Electrical and optical characteristics of CsPbI$_3$ and CsPbBr$_3$ lead halide perovskite nanocrystal films deposited on $c$-Si solar cells for photovoltaic applications

    Fizika Tverdogo Tela, 64:11 (2022),  1695–1700
  16. Interface doping of zinc oxide nanorods

    Fizika Tverdogo Tela, 64:11 (2022),  1681–1689
  17. Generation of terahertz radiation under the femtosecond laser excitation of a multilayer structure based on a-Si:H/a-SiC:H/c-Si

    Pis'ma v Zh. Èksper. Teoret. Fiz., 116:12 (2022),  825–829
  18. Local structure of amorphous (GeTe)$_x$(Sb$_2$Te$_3$) films

    Zhurnal Tekhnicheskoi Fiziki, 92:11 (2022),  1678–1686
  19. Gas sensitivity of nanostructured coatings based on zinc oxide nanorods under combined activation

    Zhurnal Tekhnicheskoi Fiziki, 92:5 (2022),  758–764
  20. Formation of a copper contact grid on the surface of silicon heterojunction solar cells

    Fizika i Tekhnika Poluprovodnikov, 56:5 (2022),  516–525
  21. Influence of the oxygen during the deposition of an indium tin oxide thin film by magnetron sputtering for heterojunction solar cells

    Fizika i Tekhnika Poluprovodnikov, 56:3 (2022),  315–319
  22. Nature of the local environment of germany atoms in amorphous films (GeTe)$_x$(Sb$_2$Te$_3$)

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:15 (2022),  11–14
  23. Thermophysical properties of thermally expanded graphite

    TVT, 60:1 (2022),  19–22
  24. Local structure and anti-structural defects of tin in amorphous and crystalline Ge$_{2}$Sb$_{2}$Te$_{5}$ films

    Fizika i Tekhnika Poluprovodnikov, 55:1 (2021),  3–8
  25. Hyperfine interactions in copper lattice sites of antiferromagnetic compounds representing the analogues of superconducting copper metal-oxide compounds

    Fizika Tverdogo Tela, 62:3 (2020),  381–385
  26. The effect of texturing of silicon wafer surfaces for solar photoelectric transducers on their strength properties

    Zhurnal Tekhnicheskoi Fiziki, 90:7 (2020),  1168–1174
  27. Structural and optical properties of carbon nanofibers

    Zhurnal Tekhnicheskoi Fiziki, 90:3 (2020),  430–433
  28. Two-stage synthesis of structured microsystems based on zinc oxide nanorods using ultrasonic spray pyrolysis and low-temperature hydrothermal method

    Fizika i Tekhnika Poluprovodnikov, 54:11 (2020),  1251–1257
  29. Hyperfine interactions in copper sites of dielectric and superconducting copper metal oxides

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:21 (2020),  52–54
  30. Local structure of amorphous and crystalline Ge$_{2}$Sb$_{2}$Te$_{5}$ films

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:19 (2020),  19–21
  31. Controlling the fractality and size of silver clusters in the one-step synthesis of Ag–ZnO heterostructures

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:17 (2020),  30–32
  32. A method for calculating operating characteristics of silicon heterojunction solar cells with arbitrary parameters of crystalline substrates

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:17 (2020),  3–5
  33. Sol-gel technology adaptation of nanostructured zinc oxide for flexible electronics

    Zhurnal Tekhnicheskoi Fiziki, 89:12 (2019),  1917–1922
  34. Analysis of the structural evolution of zinc oxide powders obtained by mechanical high-energy grinding

    Zhurnal Tekhnicheskoi Fiziki, 89:9 (2019),  1406–1411
  35. Formation of $ncl$-Si in the amorphous matrix $a$-SiO$_{x}$ : H located near the anode and on the cathode, using a time-modulated DC plasma with the (SiH$_4$–Ar–O$_{2}$) gas phase ($C_{\mathrm{O}_2}$ = 21.5 мол%)

    Fizika i Tekhnika Poluprovodnikov, 53:11 (2019),  1547–1556
  36. Sensing amorphous/crystalline silicon surface passivation by attenuated total reflection infrared spectroscopy of amorphous silicon on glass

    Fizika i Tekhnika Poluprovodnikov, 53:8 (2019),  1140
  37. Antisite defects in Ge–Te and Ge–As–Te semiconductor glasses

    Fizika i Tekhnika Poluprovodnikov, 53:5 (2019),  718–723
  38. Through concentration profiling of heterojunction solar cells

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:17 (2019),  39–42
  39. Perovskite photovoltaic cell with hole transport layer based on a polyaniline complex

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:16 (2019),  3–5
  40. Directed self-assembly of micro- and nanowires of zinc oxide

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:12 (2019),  45–48
  41. A study of the effect of radiation on recombination loss in heterojunction solar cells based on single-crystal silicon

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:5 (2019),  9–12
  42. Temperature dependence of electrical resistance of graphene oxide

    TVT, 57:2 (2019),  221–225
  43. Parameters of nuclear quadrupole interaction and spatial distribution of electronic defects in YBa$_{2}$Cu$_{3}$O$_{7}$ and La$_{2-x}$Sr$_{x}$CuO$_{4}$ lattices

    Fizika Tverdogo Tela, 60:10 (2018),  1866–1873
  44. Spectroscopic investigation of the evolution of fractal nanoobjects in film-forming sols of orthosilicic acid

    Zhurnal Tekhnicheskoi Fiziki, 88:11 (2018),  1743–1751
  45. Thermal-conductive boards based on aluminum with an Al$_{2}$O$_{3}$ nanostructured layer for products of power electronics

    Zhurnal Tekhnicheskoi Fiziki, 88:11 (2018),  1678–1680
  46. Radio-wave absorbing properties of polymer composites on the basis of shungite and carbon nanomaterial Taunit-M

    Zhurnal Tekhnicheskoi Fiziki, 88:7 (2018),  1075–1079
  47. Improved laser scribing of transparent conductive oxide for fabrication of thin-film solar module

    Zhurnal Tekhnicheskoi Fiziki, 88:4 (2018),  572–577
  48. Optical and electrical properties of graphene oxide

    Optics and Spectroscopy, 125:6 (2018),  820–824
  49. New manufacturing approaches to texture formation and thermal expansion matching in the design of highly efficient silicon solar photoconverters

    Fizika i Tekhnika Poluprovodnikov, 52:13 (2018),  1675–1682
  50. Effect of the temporal characteristics of modulated DC plasma with the (SiH$_{4}$–Ar–O$_{2}$) gas phase on ncl-Si growth in an$a$-SiO$_{x}$:H matrix (C$_{\mathrm{O}_2}$ = 15.5 mol %)

    Fizika i Tekhnika Poluprovodnikov, 52:10 (2018),  1137–1144
  51. Features of $^{63,65}$Cu NMR spectra in the local field of samples of CuFeS$_{2}$ semiconductor mineral from oceanic sulfide deposits

    Fizika i Tekhnika Poluprovodnikov, 52:8 (2018),  836–839
  52. Investigation of the characteristics of heterojunction solar cells based on thin single-crystal silicon wafers

    Fizika i Tekhnika Poluprovodnikov, 52:7 (2018),  792–795
  53. Study of deep levels in a HIT solar cell

    Fizika i Tekhnika Poluprovodnikov, 52:7 (2018),  787–791
  54. On the structure of the Mössbauer spectra of $^{119m}$Sn impurity atoms in lead chalcogenides under conditions of the radioactive equilibrium of $^{119m}$Te/$^{119}$Sn isotopes

    Fizika i Tekhnika Poluprovodnikov, 52:6 (2018),  560–564
  55. Effect of heat and plasma treatments on the photoluminescence of zinc-oxide films

    Fizika i Tekhnika Poluprovodnikov, 52:2 (2018),  189–195
  56. The effect of base thickness on photoconversion efficiency in textured silicon-based solar cells

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:19 (2018),  40–49
  57. Radiation resistance of $\alpha$-Si:H/Si heterojunction solar cells with a thin $i$-$\alpha$-Si:H inner layer

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:17 (2018),  95–102
  58. Creating lithographic pictures using faceted zinc oxide microparticles on a silicon substrate

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:15 (2018),  87–92
  59. The use of solar cells with a bifacial contact grid under the conditions of Kazakhstan

    Zhurnal Tekhnicheskoi Fiziki, 87:12 (2017),  1879–1883
  60. Study of the photodegradation of brilliant green on mechanically activated powders of zinc oxide

    Zhurnal Tekhnicheskoi Fiziki, 87:11 (2017),  1707–1711
  61. Simulation of the sensor response of vacuummeters with sensitive elements based on multicomponent oxide nanomaterials with the fractal structure

    Zhurnal Tekhnicheskoi Fiziki, 87:5 (2017),  780–787
  62. Degradation of micromorphous thin-film silicon ($\alpha$-Si/$\mu c$-Si) solar modules: Evaluation of seasonal efficiency based on the data of monitoring

    Fizika i Tekhnika Poluprovodnikov, 51:9 (2017),  1229–1234
  63. Electron exchange between neutral and ionized impurity iron centers in vitreous arsenic selenide

    Fizika i Tekhnika Poluprovodnikov, 51:4 (2017),  472–476
  64. Investigations of CuFeS$_2$ semiconductor mineral from ocean rift hydrothermal vent fields by Cu NMR in a local field

    Fizika i Tekhnika Poluprovodnikov, 51:1 (2017),  8–11
  65. A new type of gas sensor based on the thermovoltaic effect in zinc oxide inhomogeneously doped with mixed-valence impurities

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:18 (2017),  11–16
  66. Electroluminescent study of the efficiency of silicon heterostructural solar cells

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:17 (2017),  3–11
  67. Peculiarities of photoconversion efficiency modeling in perovskite solar cells

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:14 (2017),  88–96
  68. Luminescence of solar cells with $a$-Si:H/$c$-Si heterojunctions

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:10 (2017),  95–101
  69. Absolute atomic charges in YBa$_{2}$Cu$_{3}$O$_{7}$ lattice determined by analysis of the nuclear quadrupole interaction parameters

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:8 (2017),  102–110
  70. Specific features of current flow in $\alpha$-Si : H/Sii heterojunction solar cells

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:3 (2017),  29–38
  71. Heterojunction solar cells based on single-crystal silicon with an inkjet-printed contact grid

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:1 (2017),  74–79
  72. Thermophysical properties of polymer composite based on multiwalled carbon nanotubes, obtained by electrospinning

    TVT, 55:4 (2017),  513–517
  73. Spectroscopic properties of $\gamma$-irradiated Fe$_{m}$O$_{n}$–SiO$_{2}$ composite nanoparticles

    Fizika Tverdogo Tela, 58:5 (2016),  892–896
  74. Beta-electric elements made of amorphous silicon

    Zhurnal Tekhnicheskoi Fiziki, 86:5 (2016),  102–106
  75. Synthesis of ZnO-based nanostructures for heterostructure photovoltaic cells

    Fizika i Tekhnika Poluprovodnikov, 50:9 (2016),  1276–1282
  76. Electrical, optical, and photoluminescence properties of ZnO films subjected to thermal annealing and treatment in hydrogen plasma

    Fizika i Tekhnika Poluprovodnikov, 50:8 (2016),  1030–1035
  77. Electron exchange between tin impurity $U^-$ centers in PbS$_{z}$Se$_{1-z}$ alloys

    Fizika i Tekhnika Poluprovodnikov, 50:7 (2016),  893–899
  78. Lifetime of excitons localized in Si nanocrystals in amorphous silicon

    Fizika i Tekhnika Poluprovodnikov, 50:5 (2016),  639–642
  79. On the formation of silicon nanoclusters ncl-Si in a hydrogenated amorphous silicon suboxide matrix $a$-SiO$_{x}$:H (0 $<x<$ 2), with time-modulated dc magnetron plasma

    Fizika i Tekhnika Poluprovodnikov, 50:4 (2016),  538–548
  80. Method for optimizing the parameters of heterojunction photovoltaic cells based on crystalline silicon

    Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  259–263
  81. Composition and optical properties of amorphous $a$-SiO$_x$ :H films with silicon nanoclusters

    Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  212–217
  82. Photoluminescence at the fundamental absorption edge of single-crystal silicon textured without masking

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:19 (2016),  55–61
  83. Nanolithographic self-assembly of colloidal nanoparticles

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:18 (2016),  81–87
  84. Crystallization of amorphous hydrogenated silicon ($a$-Si:H) films under irradiation with femtosecond laser pulses

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:15 (2016),  36–42
  85. The temperature dependence of the characteristics of crystalline-silicon-based heterojunction solar cells

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:6 (2016),  70–76
  86. Correlations in infrared spectra of nanostructures based on mixed oxides

    Fizika Tverdogo Tela, 57:12 (2015),  2304–2312
  87. Electron exchange between impurity centers of tin in lead chalcogenides

    Fizika Tverdogo Tela, 57:10 (2015),  1928–1933
  88. Low-frequency impedance in thin films near the metal-semiconductor phase transition

    Fizika Tverdogo Tela, 57:9 (2015),  1859–1862
  89. Temperature dependence of electrical resistivity of composite films based on multi-walled carbon nanotubes

    Fizika Tverdogo Tela, 57:2 (2015),  404–407
  90. Photoinduced defects in $a$-Si:H Films and InGaN/GaN multiple quantum well structures doped with Eu, Sm, and Eu + Sm

    Zhurnal Tekhnicheskoi Fiziki, 85:9 (2015),  97–104
  91. Sensitive elements of vacuum sensors based on porous nanostructured SiO$_2$–SnO$_2$ sol-gel films

    Zhurnal Tekhnicheskoi Fiziki, 85:6 (2015),  143–147
  92. Structure and composition of silicon microarrays subjected to cyclic insertion and extraction of lithium

    Zhurnal Tekhnicheskoi Fiziki, 85:4 (2015),  52–61
  93. Study of the processes of degradation of the optical properties of mesoporous and macroporous silicon upon exposure to simulated solar radiation

    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1540–1545
  94. Effect of self-organization, defects, impurities, and autocatalytic processes on the parameters of ZnO films and nanorods

    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1521–1530
  95. Zinc-oxide-based nanostructured materials for heterostructure solar cells

    Fizika i Tekhnika Poluprovodnikov, 49:10 (2015),  1402–1406
  96. X-ray fluorescence analysis of Ge$_{1-x}$Se$_x$, As$_{1-x}$Se$_x$, and Ge$_{1-x-y}$As$_y$Se$_x$ glasses using electronic excitation

    Fizika i Tekhnika Poluprovodnikov, 49:10 (2015),  1397–1401
  97. Emission intensity of the $\lambda$ = 1.54 $\mu$m line in ZnO films grown by magnetron sputtering, diffusion doped with Ce, Yb, Er

    Fizika i Tekhnika Poluprovodnikov, 49:8 (2015),  1016–1023
  98. Silicon nanoclusters ncl-Si in a hydrogenated amorphous silicon suboxide matrix $a$-SiO$_x$ : H (0 $<x<$ 2)

    Fizika i Tekhnika Poluprovodnikov, 49:7 (2015),  887–898
  99. High-efficiency plasma treatment for surface modification of LPCVD ZnO

    Fizika i Tekhnika Poluprovodnikov, 49:6 (2015),  843–846
  100. Aluminoborosilicate glasses codoped with rare-earth elements as radiation-protective covers for solar cells

    Fizika i Tekhnika Poluprovodnikov, 49:6 (2015),  753–757
  101. Simulation of the natural characteristics of vertical $a$-Si : H/$\mu c$-Si:H tandem solar cells. 2. Analysis of the results and comparison with the experiment

    Fizika i Tekhnika Poluprovodnikov, 49:5 (2015),  707–714
  102. Simulation of the natural characteristics of vertical $a$-Si : H/$\mu c$-Si:H tandem solar cells. 1. General relations

    Fizika i Tekhnika Poluprovodnikov, 49:5 (2015),  697–706
  103. Flexible photovoltaic modules based on amorphous hydrogenated silicon

    Fizika i Tekhnika Poluprovodnikov, 49:5 (2015),  693–696
  104. Peculiarities of the electronic structure and phase composition of amorphous (SiO$_2$)$_x$($a$-Si:H)$_{x-1}$ composite films according to X-ray spectroscopy data

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:20 (2015),  82–88
  105. The thermovoltaic effect in zinc oxide inhomogeneously doped with mixed-valence impurities

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:19 (2015),  22–28
  106. Analysis of the possibility of high-efficiency photovoltaic conversion in tandem heterojunction thin-layer solar cells

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:10 (2015),  42–49
  107. A study of the influence exerted by the spectral sensitivity of photoelectric units based on $c$-Si and $\alpha$-Si/$\mu c$-Si and by operating conditions on their working efficiency

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:3 (2015),  17–25
  108. Investigation of the structure, elemental and phase compositions of Fe$_3$O$_4$–SiO$_2$ composite layers by scanning electron microscopy, X-ray spectroscopy, and thermal nitrogen desorption methods

    Fizika Tverdogo Tela, 56:11 (2014),  2086–2090
  109. Study of catalytic properties of sol-gel-derived CoO$_x$–SiO$_2$ film systems by the example of the growth of carbon nanomaterials

    Fizika Tverdogo Tela, 56:7 (2014),  1356–1359
  110. Investigation of the structure and composition of film sol-gel-derived CoO$_x$–SiO$_2$ systems

    Fizika Tverdogo Tela, 56:2 (2014),  270–275
  111. Operation of an autonomous hybrid solar power plant in the Northwestern Federal District of Russia

    Zhurnal Tekhnicheskoi Fiziki, 84:10 (2014),  63–67
  112. Structures of nanowires with Zn–ZnO:CuO junctions for detecting ethanol vapors

    Zhurnal Tekhnicheskoi Fiziki, 84:5 (2014),  143–148
  113. Porous silicon and its applications in biology and medicine

    Zhurnal Tekhnicheskoi Fiziki, 84:1 (2014),  67–78
  114. On the collection of photocarriers in high-resistance silicon amorphous-crystalline heterostructures

    Fizika i Tekhnika Poluprovodnikov, 48:9 (2014),  1198–1204
  115. Features of the spin-lattice relaxation of nuclear spins $^{63,65}$Cu in the CuAlO$_2$ semiconductor compound

    Fizika i Tekhnika Poluprovodnikov, 48:6 (2014),  801–804
  116. $p$-GaSb(Ox)/$n$-GaSb native-oxide heterojunctions: Non-vacuum process and photoelectric properties

    Fizika i Tekhnika Poluprovodnikov, 48:4 (2014),  471–474
  117. Determination of the composition of multicomponent chalcogenide semiconductors by X-ray fluorescence analysis

    Fizika i Tekhnika Poluprovodnikov, 48:2 (2014),  272–277
  118. Trions in silicon nanocrystals in an amorphous hydrogenated silicon matrix

    Fizika i Tekhnika Poluprovodnikov, 48:2 (2014),  249–252
  119. The photosensitivity of amorphous-crystalline silicon heterostructures with an inversion channel

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:9 (2014),  72–79
  120. Temperature dependence of the frequency of two-electron exchange between impurity negative-$U$ tin centers in lead sulfide

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:5 (2014),  22–26
  121. Structure and electrochemical characteristics of LiFePO$_4$ cathode materials for rechargeable Li-Ion batteries

    Fizika Tverdogo Tela, 55:7 (2013),  1288–1297
  122. Features of the structure and defect states in hydrogenated polymorphous silicon films

    Pis'ma v Zh. Èksper. Teoret. Fiz., 97:8 (2013),  536–540
  123. Annual dependences of generated power and electrical energy for $a$-Si:H-based solar cells

    Zhurnal Tekhnicheskoi Fiziki, 83:11 (2013),  86–91
  124. Simulation of daytime variations in the characteristics of $a$-Si:H solar cells

    Zhurnal Tekhnicheskoi Fiziki, 83:11 (2013),  78–85
  125. Microdetermination of titanium on the developed silicon surface using cells made of perfluorinated proton-conducting membranes

    Zhurnal Tekhnicheskoi Fiziki, 83:5 (2013),  147–150
  126. Study of the photocatalytic and sensor properties of ZnO/SiO$_2$ nanocomposite layers

    Fizika i Tekhnika Poluprovodnikov, 47:12 (2013),  1662–1666
  127. Method for studying the light-induced degradation of $\alpha$-Si : H/$\mu c$-Si:H tandem photovoltaic converters under increased illuminance

    Fizika i Tekhnika Poluprovodnikov, 47:10 (2013),  1385–1390
  128. Study of the electronic properties of hydrogenated amorphous silicon films by femtosecond spectroscopy

    Fizika i Tekhnika Poluprovodnikov, 47:10 (2013),  1367–1370
  129. Influence of the fabrication conditions of polymorphous silicon films on their structural, electrical and optical properties

    Fizika i Tekhnika Poluprovodnikov, 47:9 (2013),  1283–1287
  130. Analysis of light-induced degradation mechanisms in $\alpha$-Si:H/$\mu$-Si:H solar photovoltaics

    Fizika i Tekhnika Poluprovodnikov, 47:9 (2013),  1264–1269
  131. Study of the properties of solar cells based on $a$-Si : H-$p$–$i$–$n$ structures by admittance spectroscopy

    Fizika i Tekhnika Poluprovodnikov, 47:8 (2013),  1094–1101
  132. Study of the light-induced degradation of tandem $\alpha$-Si : H/$\mu c$-Si : H photovoltaic converters

    Fizika i Tekhnika Poluprovodnikov, 47:5 (2013),  667–674
  133. Model of the formation of a polycrystalline $n$-ZnO/$p$-CuO heterojunction

    Fizika i Tekhnika Poluprovodnikov, 47:5 (2013),  642–643
  134. Photoinduced degradation of $\alpha$-Si : H/$\mu$c-Si : H

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:20 (2013),  40–48
  135. Microdetermination of silicon dioxide on the surface by sensors based on perfluorinated proton-conducting membranes

    Zhurnal Tekhnicheskoi Fiziki, 82:6 (2012),  132–134
  136. Creation and photoelectric properties of Ox/$p$-InAs heterostructures

    Fizika i Tekhnika Poluprovodnikov, 46:10 (2012),  1293–1296
  137. Investigation of the promising thermoelectric compound CuAlO$_2$ by the method of nuclear quadrupole resonance in Cu

    Fizika i Tekhnika Poluprovodnikov, 46:9 (2012),  1126–1129
  138. Influence of irradiation with neutrons on the characteristics of the voltage terminating structure in silicon radiation detectors

    Fizika i Tekhnika Poluprovodnikov, 46:7 (2012),  971–978
  139. Evaluation of the conversion efficiency of thin-film single-junction ($a$-Si:H) and tandem ($\mu c$-Si:H + $a$-Si:H) solar cells by analysis of the experimental dark and load current-voltage (I–V) characteristics

    Fizika i Tekhnika Poluprovodnikov, 46:7 (2012),  952–959
  140. Intensity of emission from intracenter 4$f$-transitions in $a$-Si:H, ZnO, and GaN films doped with rare-earth ions

    Fizika i Tekhnika Poluprovodnikov, 46:7 (2012),  925–936
  141. Study of platinum impurity atom state in vitreous arsenic selenide

    Fizika i Tekhnika Poluprovodnikov, 46:7 (2012),  901–904
  142. Photosensitive Ox/GaAs heterojunctions: Creation and properties

    Fizika i Tekhnika Poluprovodnikov, 46:6 (2012),  802–804
  143. Creation and studies of the photosensitivity of Ox/$n$-GaP structures

    Fizika i Tekhnika Poluprovodnikov, 46:6 (2012),  798–801
  144. Effect of the femtosecond laser treatment of hydrogenated amorphous silicon films on their structural, optical, and photoelectric properties

    Fizika i Tekhnika Poluprovodnikov, 46:6 (2012),  769–774
  145. Phase transitions in thin Ge$_2$Sb$_2$Te$_5$ chalcogenide films according to Raman spectroscopy data

    Fizika i Tekhnika Poluprovodnikov, 46:5 (2012),  609–612
  146. Photosensitivity of ZnO/CdS/Cu(In,Ga)Se$_2$/Mo thin-film solar cells fabricated on various substrates

    Fizika i Tekhnika Poluprovodnikov, 46:2 (2012),  231–234
  147. Mössbauer studies of structural properties and electrochemical characteristics of LiFePO$_4$

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:15 (2012),  57–66
  148. Studying structure of thin copper phthalocyanine films by reflectance anisotropy spectroscopy

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:6 (2012),  68–76
  149. Thermally induced defect photoluminescence in hydrogenated amorphous silicon

    Fizika Tverdogo Tela, 53:2 (2011),  240–246
  150. Luminescence of amorphous silicon nanoclusters

    Pis'ma v Zh. Èksper. Teoret. Fiz., 94:5 (2011),  402–405
  151. Energy transfer between silicon nanocrystals

    Pis'ma v Zh. Èksper. Teoret. Fiz., 93:3 (2011),  162–165
  152. Thermal conductivity of a composite medium with a disperse graphene filler

    Zhurnal Tekhnicheskoi Fiziki, 81:8 (2011),  15–19
  153. Comprehensive study of the conditions for obtaining hydrogenated amorphous erbium- and oxygen-doped silicon suboxide films, $a$-SiO$_x$:H$\langle$Er,O$\rangle$, by dc-magnetron deposition

    Fizika i Tekhnika Poluprovodnikov, 45:12 (2011),  1667–1677
  154. Tin impurity centers in glassy germanium chalcogenides

    Fizika i Tekhnika Poluprovodnikov, 45:10 (2011),  1399–1404
  155. Impurity centers of tin in glassy arsenic chalcogenides

    Fizika i Tekhnika Poluprovodnikov, 45:6 (2011),  801–805
  156. Photosensitive structures based on CuIn$_5$Te$_8$ single crystals: Development and properties

    Fizika i Tekhnika Poluprovodnikov, 45:5 (2011),  617–621
  157. Specific features of photoelectric and optical properties of amorphous hydrogenated silicon films produced by plasmochemical deposition from monosilane–hydrogen mixture

    Fizika i Tekhnika Poluprovodnikov, 45:4 (2011),  518–523
  158. Surface-barrier structures on single crystals of CdMgMnTe quaternary solid solutions: Creation and properties

    Fizika i Tekhnika Poluprovodnikov, 45:4 (2011),  468–473
  159. Specific features of amorphous silicon layers grown by plasma-enhanced chemical vapor deposition with tetrafluorosilane

    Fizika i Tekhnika Poluprovodnikov, 45:3 (2011),  312–315
  160. Electrical, optical, and mechanical properties of amorphous hydrogenated carbon obtained under various deposition conditions

    Fizika i Tekhnika Poluprovodnikov, 45:1 (2011),  120–122
  161. Portable power source based on air-hydrogen fuel cells with free-breathing cathodes

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:9 (2011),  45–54
  162. X-ray fluorescence analysis of the composition of As–Ge–Se glasses and films

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:6 (2011),  15–20
  163. Development and photoelectric properties of In/$p$-Ag$_3$AsS$_3$ surface-barrier structures

    Fizika i Tekhnika Poluprovodnikov, 44:8 (2010),  1059–1063
  164. Two-electron tin centers arising in glassy chalcogenides of arsenic due to nuclear reactions

    Fizika i Tekhnika Poluprovodnikov, 44:8 (2010),  1012–1016
  165. Photoconductivity of two-phase hydrogenated silicon films

    Fizika i Tekhnika Poluprovodnikov, 44:4 (2010),  513–516
  166. Polydisalicylidene azomethyne/Si(GaAs) heterojunctions: Development and properties

    Fizika i Tekhnika Poluprovodnikov, 44:3 (2010),  372–376
  167. Growth of the (In$_2$S$_3$)$_x$(FeIn$_2$S$_4$)$_{1-x}$ single crystals and properties of photoelectric structures on their basis

    Fizika i Tekhnika Poluprovodnikov, 44:1 (2010),  39–43
  168. Determination of the composition of binary chalcogenide glasses by X-ray fluorescence analysis

    Fizika i Tekhnika Poluprovodnikov, 44:1 (2010),  26–29
  169. Membrane-electrode assemblies with high specific power based on functionalized carbon nanotubes

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:23 (2010),  98–105
  170. Mechanochemical dispersion of thermoexpanded graphite

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:13 (2010),  81–88
  171. Humidity-independent portable air-hydrogen fuel cells with slotted silicon based gas-distributing plates

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:11 (2010),  1–9
  172. Effect of temperature annealing on the properties of $a$-$\mathrm{Si}_{1-x}\mathrm{C}_{x}$ films $(0<x \leqslant 1)$

    Fizika Tverdogo Tela, 34:1 (1992),  326–328
  173. Фотоэлектрические свойства пленок $a$-Si : H и структур на их основе в УФ области спектра

    Fizika i Tekhnika Poluprovodnikov, 25:8 (1991),  1350–1354
  174. PHOTOCONDUCTIVITY AND SHOCK IONIZATION IN A-SI-H FILMS IN UV SPECTRUM DOMAIN

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:3 (1991),  81–84
  175. Anti-stokes radiation of amorphous $\alpha$-$\mathrm{C}:\mathrm{H}$ carbon films

    Fizika Tverdogo Tela, 32:3 (1990),  784–788
  176. Фотолюминесценция аморфных пленок $a$-Si$_{1-x}$C$_{x}$ : H

    Fizika i Tekhnika Poluprovodnikov, 24:4 (1990),  710–716
  177. Влияние технологии приготовления пленок $a$-Si : H на излучательную рекомбинацию

    Fizika i Tekhnika Poluprovodnikov, 24:3 (1990),  488–491
  178. PHOTOSENSITIVITY OF P-I-N-STRUCTURES AND STRUCTURES WITH SCHOTTKY-BARRIER BASED ON A-SI-H IN THE UV EMISSION DOMAIN

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:1 (1990),  47–50
  179. Влияние энергии возбуждения на температурное гашение фотопроводимости в аморфном гидрогенизированном кремнии

    Fizika i Tekhnika Poluprovodnikov, 22:12 (1988),  2173–2176
  180. О глубоких центрах фотолюминесценции в легированных ХСП и $a$-Si : H

    Fizika i Tekhnika Poluprovodnikov, 22:5 (1988),  927–929
  181. FEATURES OF PHOTOLUMINESCENCE OF AMORPHOUS HYDROGENIZED CARBON (A-C-H) FILMS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:18 (1988),  1675–1680
  182. PHOTOINDUCED EFFECT IN THE NEAR-CONTACT DOMAIN OF THE PLANAR LIGHTGUIDE WITH AMORPHOUS HYDROGENATED SILICON FILM

    Zhurnal Tekhnicheskoi Fiziki, 57:10 (1987),  1978–1980
  183. Photoluminescence of the Multilayer $n{-}p{-}n{-}p$ Structure Based on Amorphous Hydrogenated Silicon

    Fizika i Tekhnika Poluprovodnikov, 21:5 (1987),  926–928
  184. Electroptical Kerr light-modulation in the glass wave-guide $a-Si:H$ coating layer structure

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:12 (1987),  705–709
  185. Refinement of the Constant-Photocurrent Method for the Determination of Localized-State Density in $a$-Si : H

    Fizika i Tekhnika Poluprovodnikov, 20:11 (1986),  2106–2108
  186. Solubility of Tin in Phosphorus-Doped Amorphous Hydrogenated Silicon

    Fizika i Tekhnika Poluprovodnikov, 19:12 (1985),  2219–2220
  187. Diffusion in Phosphorus-Doped Amorphous and Hydrogenated Silicon

    Fizika i Tekhnika Poluprovodnikov, 19:7 (1985),  1182–1185
  188. Low-Temperature Diffusion of Platinum $a$-Si : Н Films

    Fizika i Tekhnika Poluprovodnikov, 19:2 (1985),  358–360
  189. Acoustoelectron interactions in the $Li\,Nb\,O_3-a-Si:H$ layered structure

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:20 (1985),  1248–1251
  190. Production and investigation of thin-film wave-guide photodiodes with the Schottky-barrier based on amorphous silica

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:13 (1985),  813–816
  191. Influence of the temperature anneal on characteristics of solar elements with Schottky-barrier based on the amorphous hydrogenated silicon

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:1 (1985),  28–31
  192. DETERMINATION OF THE DENSITY OF STATES IN FORBIDDEN BANDS OF AMORPHOUS HYDROGENATED SILICON

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:9 (1984),  529–532
  193. Особенности спектральной чувствительности барьеров Шоттки на гидрированном аморфном кремнии

    Fizika i Tekhnika Poluprovodnikov, 17:10 (1983),  1869–1871

  194. Андрей Георгиевич Забродский, к 75-летию со дня рождения

    Zhurnal Tekhnicheskoi Fiziki, 91:6 (2021),  893–894

© Steklov Math. Inst. of RAS, 2026