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Kukushkin Sergei Arsen'evich

Publications in Math-Net.Ru

  1. Природа стабильных и метастабильных состояний электронной структуры вакансионных нитей на поверхности карбида кремния

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 52:5 (2026),  45–49
  2. Magnetism of hybrid SiC/Si structures synthesized by the method of vacancy-coordinated substitution of atoms

    Fizika Tverdogo Tela, 67:8 (2025),  1573–1577
  3. Nano-electromagnets based on hybrid SiC/Si nanostructures

    Fizika Tverdogo Tela, 67:8 (2025),  1432–1436
  4. GaN microrods growth by combined PA-MBE/HVPE method

    Fizika Tverdogo Tela, 67:6 (2025),  934–939
  5. Magnetic susceptibility SiC/Si hybrid structures synthesized by the method of coordinated substitution of atoms

    Fizika Tverdogo Tela, 67:4 (2025),  624–634
  6. Mechanism of growth of Ga$_2$O$_3$ epitaxial layers by hydride vapour-phase epitaxy on SiC/Si (110) substrate

    Fizika Tverdogo Tela, 67:1 (2025),  105–113
  7. Machine learning-based predictive modeling for SiC/Si thin film growth

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:22 (2025),  31–35
  8. Andreev terahertz irradiation generators

    Fizika Tverdogo Tela, 66:11 (2024),  2052–2058
  9. The effect of tin on the properties of gallium nitride grown by hydride vapor-phase epitaxy

    Fizika Tverdogo Tela, 66:8 (2024),  1338–1343
  10. Structure evolution during the transformation of Si into SiC by the method of coordinated substitution of atoms

    Fizika Tverdogo Tela, 66:7 (2024),  1133–1143
  11. Studies of Al$_x$Ga$_{1-x}$N/AlN, nanosized columnar heterostructures grown on silicon substrates with various surface modifications

    Zhurnal Tekhnicheskoi Fiziki, 94:1 (2024),  138–150
  12. Interaction of silicon vacancies in silicon carbide

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:21 (2024),  19–23
  13. Change of the elastic strain in SiC films growing on Si substrates by the method of consistent atomic substitution

    Fizika Tverdogo Tela, 65:1 (2023),  71–75
  14. Studies of structural and mechanical properties of AlGaN thin films on nano-SiC/Si hybrid substrates

    Fizika i Tekhnika Poluprovodnikov, 57:7 (2023),  534–537
  15. Top-down formation of biocompatible SiC nanotubes

    Fizika i Tekhnika Poluprovodnikov, 57:5 (2023),  343–347
  16. Phase transformations in gallium oxide layers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:17 (2023),  6–9
  17. Thin-film LED based on AlInGaN layers grown on hybrid SiC/Si substrates

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:15 (2023),  3–6
  18. Thermal conductivity of hybrid SiC/Si substrates for the growth of LED heterostructures

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:14 (2023),  19–21
  19. Influence of the kinetics of atomic steps on the growth of multicomponent crystals at elevated supersaturation

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:13 (2023),  35–38
  20. Growth of SiC, AlN, and GaN films on silicon parts of arbitrary geometry for microelectromechanical applications

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:11 (2023),  3–6
  21. Structure and properties of composites based on aluminum and gallium nitrides grown on silicon of different orientations with a buffer layer of silicon carbide

    Fizika Tverdogo Tela, 64:5 (2022),  522–527
  22. Study of silicon-to-silicon carbide transformation stages in the process of atomic substitution by the methods of total external X-ray reflection and X-ray diffractometry

    Fizika Tverdogo Tela, 64:3 (2022),  326–336
  23. Growth regimes of aluminium nitride films on hybrid SiC/Si(111) substrates

    Fizika Tverdogo Tela, 64:1 (2022),  117–124
  24. Phase transitions in silicon carbide epitaxial layers grown on a silicon substrate by the method of coordinated substitution of atoms

    Fizika i Tekhnika Poluprovodnikov, 56:7 (2022),  715–718
  25. Growth of thin-film AlGaN/GaN epitaxial heterostructures on hybrid substrates containing layers of silicon carbide and porous silicon

    Fizika i Tekhnika Poluprovodnikov, 56:6 (2022),  547–552
  26. Spintronic properties of the interface between Si(111) and 3$C$-SiC(111) grown by the method of coordinated substitution of atoms

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:20 (2022),  43–46
  27. Peculiarities of nucleation and growth of InGaN nanowires on SiC/Si substrates by HVPE

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:4 (2022),  24–28
  28. Self-organization of the composition of Al$_{x}$Ga$_{1-x}$N films grown on hybrid SiC/Si substrates

    Fizika Tverdogo Tela, 63:3 (2021),  363–369
  29. Registration of terahertz radiation with silicon carbide nanostructures

    Fizika i Tekhnika Poluprovodnikov, 55:12 (2021),  1195–1202
  30. Terahertz emission from silicon carbide nanostructures

    Fizika i Tekhnika Poluprovodnikov, 55:11 (2021),  1027–1033
  31. Magnetic properties of thin epitaxial SiC layers grown by the atom-substitution method on single-crystal silicon surfaces

    Fizika i Tekhnika Poluprovodnikov, 55:2 (2021),  103–111
  32. MBE growth of InGaN nanowires on SiC/Si(111) and Si(111) substrates

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:21 (2021),  32–35
  33. Mechanical properties of a composite SiC coating on graphite obtained by the atomic substitution method

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:20 (2021),  7–10
  34. The thermodynamic stability of In$_{x}$Ga$_{1-x}$N solid solutions

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:19 (2021),  51–54
  35. A light-emitting diode based on alingan heterostructures grown on SiC/Si substrates and its fabrication technology

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:18 (2021),  3–6
  36. Peculiarities of epitaxial growth of III – N led heterostructures on SiC/Si substrates

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:15 (2021),  15–18
  37. Dielectric and pyroelectric properties of composites based on aluminum and gallium nitrides grown by chloride-hydride epitaxy on a silicon carbide-on-silicon substrate

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:9 (2021),  7–10
  38. The influence of the porosity of silicon layer on the elastic properties of hybrid SiC/Si substrates

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:3 (2021),  25–28
  39. Influence of a nanoporous silicon layer on the practical implementation and specific features of the epitaxial growth of GaN layers on SiC/$por$-Si/$c$-Si templates

    Fizika i Tekhnika Poluprovodnikov, 54:5 (2020),  491–503
  40. Optical properties of GaN/SiC/$por$-Si/Si(111) hybrid heterostructures

    Fizika i Tekhnika Poluprovodnikov, 54:4 (2020),  346–354
  41. The optical properties, energy band structure, and interfacial conductance of a 3$C$-SiC(111)/Si(111) heterostructure grown by the method of atomic substitution

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:22 (2020),  3–5
  42. Low-temperature growth of the CdS cubic phase by atomic-layer deposition on SiC/Si hybrid substrates

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:21 (2020),  3–6
  43. Comparative ellipsometric analysis of silicon carbide polytypes 4$H$, 15$R$, and 6$H$ produced by a modified Lely method in the same growth process

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:19 (2020),  28–31
  44. Investigation of the hardness and Young's modulus in thin near-surface layers of silicon carbide from the Si- and C-faces by nanoindentation

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:15 (2020),  36–38
  45. Epitaxial growth of bulk semipolar aln films on Si(001) and hybrid SiC/Si(001) substrates

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:11 (2020),  22–25
  46. Aromatic-like carbon nanostructures created on the vicinal SiC surfaces

    Fizika Tverdogo Tela, 61:12 (2019),  2436
  47. Influence of orientation of a silicon substrate with a buffer silicon carbide layer on dielectric and polar properties of aluminum nitride films

    Fizika Tverdogo Tela, 61:12 (2019),  2379–2384
  48. A new method of growing AlN, GaN, and AlGaN bulk crystals using hybrid SiC/Si substrates

    Fizika Tverdogo Tela, 61:12 (2019),  2338–2343
  49. Mechanism of diffusion of carbon and silicon monooxides in a cubic silicon carbide crystal

    Fizika Tverdogo Tela, 61:12 (2019),  2334–2337
  50. Dislocation reactions in a semipolar gallium nitride layer grown on a vicinal Si(001) substrate using aluminum nitride and 3$C$–SiC buffer layers

    Fizika Tverdogo Tela, 61:12 (2019),  2317–2321
  51. Study of elastic properties of SiC films synthesized on Si substrates by the method of atomic substitution

    Fizika Tverdogo Tela, 61:12 (2019),  2313–2315
  52. Photoemission studies of the electronic structure of GaN grown by plasma assisted molecular beam epitaxy

    Fizika Tverdogo Tela, 61:12 (2019),  2294–2297
  53. Method for controlling the polarity of gallium nitride layers in epitaxial synthesis of GaN/AlN heterostructures on hybrid SiC/Si substrates

    Fizika Tverdogo Tela, 61:12 (2019),  2289–2293
  54. Proceedings of the International Conference “Mechanisms and nonlinear problems of nucleation and growth of crystals and thin films”, dedicated to the memory of the outstanding theoretical physicist professor V.V. Slyozov

    Fizika Tverdogo Tela, 61:12 (2019),  2269–2273
  55. Pathways of transitions between polytypes in silicon carbide

    Fizika Tverdogo Tela, 61:8 (2019),  1443–1447
  56. Two-stage conversion of silicon to nanostructured carbon by the method of coordinated atomic substitution

    Fizika Tverdogo Tela, 61:3 (2019),  587–593
  57. Studying evolution of the ensemble of micropores in a SiC/Si structure during its growth by the method of atom substitution

    Fizika Tverdogo Tela, 61:3 (2019),  433–440
  58. Microscopic description of the mechanism of transition between the 2$H$ and 4$H$ polytypes of silicon carbide

    Fizika Tverdogo Tela, 61:3 (2019),  422–425
  59. On the mechanism of the vapor–solid–solid growth of Au-catalyzed GaAs nanowires

    Fizika i Tekhnika Poluprovodnikov, 53:3 (2019),  370–380
  60. Photoelectric properties of GaN layers grown by plasma-assisted molecular-beam epitaxy on Si(111) substrates and SiC/Si(111) epitaxial layers

    Fizika i Tekhnika Poluprovodnikov, 53:2 (2019),  190–198
  61. Epitaxial growth of zinc sulfide by atomic layer deposition on SiC/Si hybrid substrates

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:21 (2019),  11–14
  62. Growing III–V semiconductor heterostructures on SiC/Si substrates

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:14 (2019),  24–27
  63. A new type of carbon nanostructure on a vicinal SiС(111)-8$^\circ$ surface

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:5 (2019),  17–20
  64. A new trigonal (rhombohedral) sic phase: ab initio calculations, a symmetry analysis and the Raman spectra

    Fizika Tverdogo Tela, 60:10 (2018),  2022–2027
  65. Mechanism of formation of carbon–vacancy structures in silicon carbide during its growth by atomic substitution

    Fizika Tverdogo Tela, 60:9 (2018),  1841–1846
  66. Study of the anisotropic elastoplastic properties of $\beta$-Ga$_{2}$O$_{3}$ films synthesized on SiC/Si substrates

    Fizika Tverdogo Tela, 60:5 (2018),  851–856
  67. Epitaxial growth of cadmium selenide films on silicon with a silicon carbide buffer layer

    Fizika Tverdogo Tela, 60:3 (2018),  499–504
  68. Effect of chemical treatment of a silicon surface on the quality and structure of silicon-carbide epitaxial films synthesized by atom substitution

    Fizika i Tekhnika Poluprovodnikov, 52:6 (2018),  656–663
  69. MBE growth and structural properties of InAs and InGaAs nanowires with different mole fraction of In on Si and strongly mismatched SiC/Si(111) substrates

    Fizika i Tekhnika Poluprovodnikov, 52:5 (2018),  522
  70. Hybrid GaAs/AlGaAs nanowire – quantum dot system for single photon sources

    Fizika i Tekhnika Poluprovodnikov, 52:4 (2018),  469
  71. IR spectra of carbon-vacancy clusters in the topochemical transformation of silicon into silicon carbide

    Fizika Tverdogo Tela, 59:12 (2017),  2403–2408
  72. A quantum-mechanical model of dilatation dipoles in topochemical synthesis of silicon carbide from silicon

    Fizika Tverdogo Tela, 59:6 (2017),  1214–1217
  73. X-ray reflectometry and simulation of the parameters of SiC epitaxial films on Si(111), grown by the atomic substitution method

    Fizika Tverdogo Tela, 59:5 (2017),  986–998
  74. Structural heteroepitaxy during topochemical transformation of silicon to silicon carbide

    Fizika Tverdogo Tela, 59:4 (2017),  755–761
  75. Misfit dislocation locking and rotation during gallium nitride growth on SiC/Si substrates

    Fizika Tverdogo Tela, 59:4 (2017),  660–667
  76. Epitaxial growth of cadmium telluride films on silicon with a buffer silicon carbide layer

    Fizika Tverdogo Tela, 59:2 (2017),  385–388
  77. Evolution of the symmetry of intermediate phases and their phonon spectra during the topochemical conversion of silicon into silicon carbide

    Fizika Tverdogo Tela, 59:1 (2017),  30–35
  78. MBE growth of ultrathin III–V nanowires on a highly mismatched SiC/Si(111) substrate

    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1525–1529
  79. Photoelectric characteristics of silicon carbide–silicon structures grown by the atomic substitution method in a silicon crystal lattice

    Fizika i Tekhnika Poluprovodnikov, 51:5 (2017),  651–658
  80. Separation of III–N/SiC epitaxial heterostructure from a Si substrate and their transfer to other substrate types

    Fizika i Tekhnika Poluprovodnikov, 51:3 (2017),  414–420
  81. The Gorsky effect in the synthesis of silicon-carbide films from silicon by topochemical substitution of atoms

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:13 (2017),  81–88
  82. Growth and optical properties of filamentary GaN nanocrystals grown on a hybrid SiC/Si(111) substrate by molecular beam epitaxy

    Fizika Tverdogo Tela, 58:10 (2016),  1886–1889
  83. Epitaxial gallium oxide on a SiC/Si substrate

    Fizika Tverdogo Tela, 58:9 (2016),  1812–1817
  84. Epitaxial growth of zinc oxide by the method of atomic layer deposition on SiC/Si substrates

    Fizika Tverdogo Tela, 58:7 (2016),  1398–1402
  85. Elastic interaction of point defects in cubic and hexagonal crystals

    Fizika Tverdogo Tela, 58:5 (2016),  941–949
  86. Pyroelectric and piezoelectric responses of thin AlN films epitaxy-grown on a SiC/Si substrate

    Fizika Tverdogo Tela, 58:5 (2016),  937–940
  87. Phase equilibrium in the formation of silicon carbide by topochemical conversion of silicon

    Fizika Tverdogo Tela, 58:4 (2016),  725–729
  88. Epitaxial growth of cadmium sulfide films on silicon

    Fizika Tverdogo Tela, 58:3 (2016),  612–615
  89. The C 1$s$ core level spectroscopy of carbon atoms at the surface SiC/Si(111)-4$^\circ$ layer and Cs/SiC/Si(111)-4$^\circ$ interface

    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1348–1352
  90. Induced surface states of the ultrathin Ва/3$C$-SiC(111) interface

    Fizika i Tekhnika Poluprovodnikov, 50:4 (2016),  465–469
  91. Photoemission studies of the vicinal SiC(100) 4$^\circ$ surface and the Cs/SiC(100) 4$^\circ$ interface

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:23 (2016),  51–57
  92. Molecular dynamics simulation of the indentation of nanoscale films on a substrate

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:12 (2016),  64–72
  93. Determining polytype composition of silicon carbide films by UV ellipsometry

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:4 (2016),  16–22
  94. Infrared spectroscopy of silicon carbide layers synthesized by the substitution of atoms on the surface of single-crystal silicon

    Fizika Tverdogo Tela, 57:12 (2015),  2469–2474
  95. Stability of the surface of an elastically strained multicomponent film in a system with chemical reactions

    Fizika Tverdogo Tela, 57:12 (2015),  2451–2457
  96. Evolution of the morphology of diamond particles and mechanism of their growth during the synthesis by chemical vapor deposition

    Fizika Tverdogo Tela, 57:11 (2015),  2125–2130
  97. Effect of the $n$ and $p$-type Si(100) substrates with a SiC buffer layer on the growth mechanism and structure of epitaxial layers of semipolar AlN and GaN

    Fizika Tverdogo Tela, 57:10 (2015),  1916–1921
  98. Growth and structure of GaN layers on silicon carbide synthesized on a Si substrate by the substitution of atoms: A model of the formation of V-defects during the growth of GaN

    Fizika Tverdogo Tela, 57:9 (2015),  1850–1858
  99. Role of elastic energy in the formation of ferroelectric barium strontium titanate films on sapphire

    Fizika Tverdogo Tela, 57:4 (2015),  796–801
  100. Pore- and delamination-induced mismatch strain relaxation and conditions for the formation of dislocations, cracks, and buckles in the epitaxial AlN(0001)/SiC/Si(111) heterostructure

    Fizika Tverdogo Tela, 57:1 (2015),  153–162
  101. The equilibrium state in the Si–O–C ternary system during SiC growth by chemical substitution of atoms

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:6 (2015),  1–9
  102. Morphological stability criterion for a spherical crystallization front in a multicomponent system with chemical reactions

    Fizika Tverdogo Tela, 56:12 (2014),  2440–2445
  103. Synthesis of epitaxial silicon carbide films through the substitution of atoms in the silicon crystal lattice: A review

    Fizika Tverdogo Tela, 56:8 (2014),  1457–1485
  104. First-order phase transition through an intermediate state

    Fizika Tverdogo Tela, 56:4 (2014),  761–768
  105. Nanoindentation and deformation properties of nanoscale silicon carbide films on silicon substrate

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:24 (2014),  53–59
  106. Epitaxy of semipolar GaN on a Si(001) substrate with a SiC buffer layer

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:9 (2014),  48–54
  107. Epitaxial silicon carbide on a 6" silicon wafer

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:1 (2014),  71–79
  108. Anisotropy of the solid-state epitaxy of silicon carbide in silicon

    Fizika i Tekhnika Poluprovodnikov, 47:12 (2013),  1575–1579
  109. Sequential structural characterization of layers in the GaN/AlN/SiC/Si(111) system by X-ray diffraction upon every growth stage

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:22 (2013),  25–32
  110. Carrier mobility in undoped SiC layers grown on silicon by a new epitaxial technique

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:10 (2013),  81–88
  111. Epitaxy of gallium nitride in semi-polar direction on Si(210) substrate

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:6 (2013),  1–8
  112. Mechanism of the phase transformation of the pyrochlore phase into the perovskite phase in lead zirconate titanate films on silicon substrates

    Fizika Tverdogo Tela, 54:3 (2012),  571–575
  113. Group-III-nitride-based light-emitting diode on silicon substrate with epitaxial nanolayer of silicon carbide

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:6 (2012),  90–95
  114. Structural characterization of GaN epilayers on silicon: Effect of buffer layers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:7 (2011),  72–79
  115. Peculiarities of crystallization of thin ferroelectric films of lead zirconate titanate

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:4 (2011),  37–43
  116. Aluminum nitride on silicon: Role of silicon carbide interlayer and chloride vapor-phase epitaxy technology

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:11 (2010),  17–23
  117. Thin-film condensation processes

    UFN, 168:10 (1998),  1083–1116
  118. Kinetics of the diffusive coalescence of solid solutions and of the temperature-induced coalescence of single-component melts under layer-by-layergrowth of nuclei of the new phase

    Fizika Tverdogo Tela, 34:4 (1992),  1102–1108
  119. RELAXATION LIQUID EPITAXY WITH MASS-TRANSFER INVERSION - SIMULATION AND EXPERIMENT

    Zhurnal Tekhnicheskoi Fiziki, 62:3 (1992),  100–105
  120. THEORETICAL PRINCIPLES OF RELAXATION LIQUID EPITAXY WITH THE MASS-TRANSFER INVERSION

    Zhurnal Tekhnicheskoi Fiziki, 60:7 (1990),  78–83
  121. Diffusive growth of vacancy pores in irradiated $\mathrm{CsBr}$

    Fizika Tverdogo Tela, 30:11 (1988),  3493–3496
  122. Crystallization of binary melts and precipitation of supersaturated solid solutions in the presence of heat and material sinks and sources

    Fizika Tverdogo Tela, 30:11 (1988),  3231–3235
  123. RELAXATION LIQUID EPITAXY BASED ON THE MASS-TRANSFER INVERSION - ITS POTENTIALITIES FOR THE FORMATION OF HYPERFINE A3B5 LAYERS

    Zhurnal Tekhnicheskoi Fiziki, 58:8 (1988),  1507–1512
  124. Binary melt crystallization and precipitation of supersaturated solid solutions under nonisothermal conditions

    Fizika Tverdogo Tela, 29:12 (1987),  3657–3666
  125. To the theory of nonisothermal coalescence in the precipitation of supersaturated solid solutions

    Fizika Tverdogo Tela, 29:6 (1987),  1812–1818
  126. SUPERTHIN GAAS LAYER GROWTH ON THE GAALAS SUBSTRATE BY LIQUID EPITAXY

    Zhurnal Tekhnicheskoi Fiziki, 56:5 (1986),  910–913
  127. Crystallization kinetics of one-component melts

    Fizika Tverdogo Tela, 27:10 (1985),  2987–2991

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