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Publications in Math-Net.Ru
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Ion synthesis: Si–Ge quantum dots
Fizika i Tekhnika Poluprovodnikov, 52:5 (2018), 516
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On the nature of cracks using single-crystalline silicon subjected to anodic etching as an example
Fizika i Tekhnika Poluprovodnikov, 48:8 (2014), 1117–1122
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Problems in measurements of parameters of elements and structures in modern micro- and nanoelectronics considering TiN/Ti diffusion barrier structures as an example
Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:14 (2013), 34–42
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Specific features of relief formation on silicon etched by a focused ion beam
Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:21 (2010), 38–45
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Magnesium redistribution in InAs under postimplantation annealing
Fizika i Tekhnika Poluprovodnikov, 26:9 (1992), 1651–1653
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Current instabilities in photoresistance based on selenium-doped silicon
Fizika i Tekhnika Poluprovodnikov, 26:9 (1992), 1529–1535
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Structural reorganization, induced by silicide formation in ion-irradiated silicon
Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:20 (1987), 1242–1247
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Investigation of waveguide structures formed by irradiation of fused quartz with hydrogen ions
Kvantovaya Elektronika, 4:6 (1977), 1372–1375
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