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Ustinov Viktor Mikhailovich

Publications in Math-Net.Ru

  1. The study of the phase noise of 89X nm-range single-mode intra-cavity contacted vcsels

    Optics and Spectroscopy, 132:12 (2024),  1230–1232
  2. Linewidth of 89Х nm-range intra-cavity contacted VCSELs

    Optics and Spectroscopy, 132:12 (2024),  1226–1229
  3. Tunnel diodes $n^{++}$-GaAs:($\delta$-Si)/$p^{++}$-Al$_{0.4}$Ga$_{0.6}$As:(C) for connecting elements of multijunction laser photoconverters

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:7 (2024),  39–42
  4. Linewidth study of MBE-grown wafer-fused single-mode 1.55 $\mu$m VCSELs

    Optics and Spectroscopy, 131:11 (2023),  1486–1489
  5. Emission linewidth and $\alpha$-factor of 1.55 $\mu$m-range vertical-cavity surface-emitting lasers based on InGaAs/InGaAlAs quantum wells

    Optics and Spectroscopy, 131:8 (2023),  1095–1100
  6. The effect of surface traps on the static characteristics and the saturation current spread in the channel of GaN HEMTs

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:22 (2023),  43–46
  7. Analysis of the internal optical losses of the 89X nm-range intracavity-contacted vertical-cavity surface-emitting lasers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:20 (2023),  43–46
  8. Development and study of a model of an autonomous energy information station of free space optical communication

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:2 (2023),  21–25
  9. Simulation and analysis of the optical characteristics of cylindrical micropillars with InAs/GaAs quantum dots

    Pis'ma v Zh. Èksper. Teoret. Fiz., 116:9 (2022),  592–598
  10. 1550 nm range high-speed single-mode vertical-cavity surface-emitting lasers

    Fizika i Tekhnika Poluprovodnikov, 56:8 (2022),  814–823
  11. Peculiarities of growth of InAs quantum dot arrays with low surface density by molecular beam epitaxy

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:24 (2022),  42–46
  12. High-speed vertically emitting lasers in the spectral range of 1550 nm, implemented in the framework of wafer sintering method

    Kvantovaya Elektronika, 52:10 (2022),  878–884
  13. Investigation of the characteristics of the InGaAs/InAlGaAs superlattice for 1300 nm range vertical-cavity surface emitting lasers

    Zhurnal Tekhnicheskoi Fiziki, 91:12 (2021),  2008–2017
  14. Investigation of the noise characteristics of vertical-cavity surface-emitting laser with a rhomboidal oxide current aperture for use in a Cs-based compact atomic magnetometer

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:24 (2021),  3–8
  15. Analysis of internal optical loss of 1.3 $\mu$m vertical-cavity surface-emitting laser based on $n^{+}$-InGaAs/$p^{+}$-InGaAs/$p^{+}$-InAlGaAs tunnel junction

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:23 (2021),  3–7
  16. Impact of transverse optical confinment on performance of 1.55 $\mu$m vertical-cavity surface-emitting lasers with a buried tunnel junction

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:22 (2021),  3–8
  17. Mushroom mesa structure for InAlAs/InGaAs avalanche photodiodes

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:21 (2021),  36–38
  18. Peculiarities of epitaxial growth of III – N led heterostructures on SiC/Si substrates

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:15 (2021),  15–18
  19. The design of an electrically-driven single photon source of the 1.3-$\mu$m spectral range based on a vertical microcavity with intracavity contacts

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:5 (2021),  23–27
  20. Investigation of anomalous lasing in vertical-cavity surface-emitting lasers of the 850-nm spectral range with a double oxide current aperture at large gain-to-cavity detuning

    Optics and Spectroscopy, 128:8 (2020),  1151–1159
  21. 1.55 $\mu$m-range vertical cavity surface emitting lasers, manufactured by wafer fusion of heterostuctures grown by solid-source molecular beam epitaxy

    Fizika i Tekhnika Poluprovodnikov, 54:10 (2020),  1088–1096
  22. The effect of a saturable absorber in long-wavelength vertical-cavity surface-emitting lasers fabricated by wafer fusion technology

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:24 (2020),  49–54
  23. A vertical-cavity surface-emitting laser for the 1.55-$\mu$m spectral range with tunnel junction based on $n^{++}$-InGaAs/$p^{++}$-InGaAs/$p^{++}$-InAlGaAs layers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:17 (2020),  21–25
  24. The effect of active region heating on dynamic and power characteristics of quantum cascade lasers emitting at a wavelength of 4.8 $\mu$m at room temperature

    Optics and Spectroscopy, 127:3 (2019),  445–448
  25. Analysis of the internal optical losses of the vertical-cavity surface-emitting laser of the spectral range of 1.55 $\mu$m formed by a plate sintering technique

    Optics and Spectroscopy, 127:1 (2019),  145–149
  26. Influence of output optical losses on the dynamic characteristics of 1.55-$\mu$m wafer-fused vertical-cavity surface-emitting lasers

    Fizika i Tekhnika Poluprovodnikov, 53:8 (2019),  1128–1134
  27. InAlAs/InGaAs/InP high-electron-mobility transistors with a composite channel and higher breakdown characteristics

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:21 (2019),  29–33
  28. Heterobarrier varactors with nonuniformly doped modulation layers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:20 (2019),  51–54
  29. Vertical-cavity surface-emitting lasers with intracavity contacts and a rhomboidal current aperture for compact atomic clocks

    Kvantovaya Elektronika, 49:2 (2019),  187–190
  30. Effect of epitaxial-structure design and growth parameters on the characteristics of metamorphic lasers of the 1.46-$\mu$m optical range based on quantum dots grown on GaAs substrates

    Fizika i Tekhnika Poluprovodnikov, 52:10 (2018),  1191–1196
  31. On the fabrication and study of lattice-matched heterostructures for quantum cascade lasers

    Fizika i Tekhnika Poluprovodnikov, 52:7 (2018),  812–815
  32. Investigation of the modified structure of a quantum cascade laser

    Fizika i Tekhnika Poluprovodnikov, 52:1 (2018),  133–137
  33. Emission-line width and $\alpha$-factor of 850-nm single-mode vertical-cavity surface-emitting lasers based on InGaAs/AlGaAs quantum wells

    Fizika i Tekhnika Poluprovodnikov, 52:1 (2018),  98–104
  34. Epitaxial InGaAs/InAlAs/AlAs structures for heterobarrier varactors with low leakage current

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:19 (2018),  16–23
  35. Quantum-cascade lasers generating at the 4.8-$\mu$m wavelength at room temperature

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:18 (2018),  17–23
  36. The influence of cavity design on the linewidth of near-ir single-mode vertical-cavity surface-emitting lasers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:1 (2018),  67–75
  37. High-speed semiconductor vertical-cavity surface-emitting lasers for optical data-transmission systems (review)

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:1 (2018),  7–43
  38. Emission-line width and $\alpha$-factor of 850-nm single-mode vertical-cavity surface-emitting lasers based on InGaAs/AlGaAs quantum wells

    Fizika i Tekhnika Poluprovodnikov, 51:12 (2017),  1697
  39. Optimization of the superlattice parameters for THz diodes

    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1493–1497
  40. Molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors

    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1484–1488
  41. Peaking of optical pulses in vertical-cavity surface-emitting lasers with an active region based on submonolayer InGaAs quantum dots

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:24 (2017),  17–23
  42. Precision calibration of the silicon doping level in gallium arsenide epitaxial layers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:19 (2017),  87–94
  43. Effect of a terahertz cavity on the conductivity of short-period GaAs/AlAs superlattices

    Pis'ma v Zh. Èksper. Teoret. Fiz., 103:2 (2016),  128–131
  44. Simulation of electron transport in GaAs/AlAs superlattices with a small number of periods for the THz frequency range

    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1548–1553
  45. Polarization characteristics of 850-nm vertical-cavity surface-emitting lasers with intracavity contacts and a rhomboidal oxide current aperture

    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1408–1413
  46. Effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis

    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1401–1407
  47. Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs

    Fizika i Tekhnika Poluprovodnikov, 50:9 (2016),  1263–1269
  48. Microdisk injection lasers for the 1.27-$\mu$m spectral range

    Fizika i Tekhnika Poluprovodnikov, 50:3 (2016),  393–397
  49. Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation

    Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  245–249
  50. A study of distributed dielectric Bragg reflectors for vertically emitting lasers of the near-IR range

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:20 (2016),  57–65
  51. Laser generation at 1.3 $\mu$m in vertical microcavities containing InAs/InGaAs quantum dot arrays under optical pumping

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:19 (2016),  70–79
  52. Emission spectra of a laser based on an In(Ga)As/GaAs quantum-dot superlattice

    Fizika i Tekhnika Poluprovodnikov, 49:10 (2015),  1379–1385
  53. Study of high-speed semiconductor VCSELs based on AlInGaAs heterostructures with large gain-cavity detuning

    Fizika i Tekhnika Poluprovodnikov, 49:1 (2015),  89–93
  54. MOVPE of III–N LED structures with short technological process

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:5 (2015),  9–17
  55. Effect of the photon lifetime on the characteristics of 850-nm vertical-cavity surface-emitting lasers with fully doped distributed Bragg reflectors and an oxide current aperture

    Fizika i Tekhnika Poluprovodnikov, 48:12 (2014),  1697–1703
  56. Influence of GaAs spacer-layer thickness on quantum coupling and optical polarization in a ten-layer system of vertically correlated InAs/GaAs quantum dots

    Fizika i Tekhnika Poluprovodnikov, 48:8 (2014),  1059–1064
  57. Degradation-robust 850-nm vertical-cavity surface-emitting lasers for 25Gb/s optical data transmission

    Fizika i Tekhnika Poluprovodnikov, 48:1 (2014),  81–87
  58. Precise calibration of thickness and composition of epitaxial AlGaAs heterostructures with vertical-cavity optical microresonators

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:24 (2014),  22–30
  59. (In,Mn)As quantum dots: Molecular-beam epitaxy and optical properties

    Fizika i Tekhnika Poluprovodnikov, 47:8 (2013),  1033–1036
  60. Single-spatial-mode semiconductor VCSELs with a nonplanar upper dielectric DBR

    Fizika i Tekhnika Poluprovodnikov, 47:7 (2013),  985–989
  61. Influence of optical losses on the dynamic characteristics of linear arrays of near-infrared vertical-cavity surface-emitting lasers

    Fizika i Tekhnika Poluprovodnikov, 47:6 (2013),  833–837
  62. Optical anisotropy of InGaAs quantum dots

    Fizika i Tekhnika Poluprovodnikov, 47:1 (2013),  87–91
  63. Radiation-induced surface degradation of GaAs and high electron mobility transistor structures

    Fizika i Tekhnika Poluprovodnikov, 46:6 (2012),  833–844
  64. Experimental study of frequency multipliers based on a GaAs/AlAs semiconductor superlattices in the terahertz frequency range

    Fizika i Tekhnika Poluprovodnikov, 46:1 (2012),  125–129
  65. Influence of the position of InGaAs quantum dot array on the spectral characteristics of AlGaAs/GaAs photovoltaic converters

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:22 (2012),  43–49
  66. Studying the formation of self-assembled (In,Mn)As quantum dots

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:10 (2012),  21–27
  67. Decreasing parasitic capacitance in vertical-cavity surface-emitting laser with selectively oxidized aperture

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:3 (2012),  10–16
  68. Study of the effect of the gate region parameters on static characteristics of microwave field-effect transistors based on pseudomorphic AlGaAs-InGaAs-GaAs heterostructures

    Fizika i Tekhnika Poluprovodnikov, 45:10 (2011),  1405–1409
  69. Effect of AlGaAs–(AlGa)$_x$O$_y$ pedestal parameters on characteristics of a microdisk laser with active region based on InAs/InGaAs quantum dots

    Fizika i Tekhnika Poluprovodnikov, 45:7 (2011),  992–995
  70. Fabrication of ordered GaAs nanowhiskers using electron-beam lithography

    Fizika i Tekhnika Poluprovodnikov, 45:6 (2011),  840–846
  71. Matrices of 960-nm vertical-cavity surface-emitting lasers

    Fizika i Tekhnika Poluprovodnikov, 45:6 (2011),  836–839
  72. Dynamic properties of AlGaAs vertical cavity surface emitting lasers with active region based on submonolayer InAs insertions

    Fizika i Tekhnika Poluprovodnikov, 45:5 (2011),  688–693
  73. Submicron surface relief fabrication technology for epitaxial GaAs structures with thin AlGaAs stop layers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:24 (2011),  9–15
  74. Carrier heating in quantum wells under optical and current injection of electron-hole pairs

    Fizika i Tekhnika Poluprovodnikov, 44:11 (2010),  1451–1454
  75. Analysis of mechanisms of carrier emission in the $p$–$i$–$n$ structures with In(Ga)As quantum dots

    Fizika i Tekhnika Poluprovodnikov, 44:10 (2010),  1352–1356
  76. MBE growth and characterization of 5-$\mu$m quantum-cascade lasers

    Fizika i Tekhnika Poluprovodnikov, 44:7 (2010),  995–1001
  77. Optical anisotropy of InAs quantum dots

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:23 (2010),  24–30
  78. MBE growth of 5 $\mu$m quantum cascade lasers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:9 (2010),  34–42
  79. Stimulated emission from optically pumped quantum dots

    Kvantovaya Elektronika, 40:7 (2010),  579–582
  80. Superluminescent InAs/AlGaAs/GaAs quantum dot heterostructure diodes emitting in the 1100—1230-nm spectral range

    Kvantovaya Elektronika, 36:6 (2006),  527–531
  81. Spin-dependent recombination in GaAsN solid solutions

    Pis'ma v Zh. Èksper. Teoret. Fiz., 82:7 (2005),  509–512
  82. Manifestation of coulomb gap in two-dimensional $p$-GaAs-AlGaAs structures with filled upper Hubbard band

    Pis'ma v Zh. Èksper. Teoret. Fiz., 76:6 (2002),  420–424
  83. Photoluminescence and the structure of heterointerfaces of (311)A-and (311)B-oriented GaAs/AlAs superlattices

    Pis'ma v Zh. Èksper. Teoret. Fiz., 75:4 (2002),  211–216
  84. Vertical-cavity emitting devices with quantum-dot structures

    UFN, 171:8 (2001),  855–857
  85. The outlook for the development of radiation sources in the middle-IR range based on the intraband transitions between the energy levels of charge carriers in injection laser heterostructures with quantum dots and wells

    UFN, 169:4 (1999),  459–464
  86. Ordered quantum-dot arrays in semiconducting matrices

    UFN, 166:4 (1996),  423–428
  87. Strained-submonolayer and quantum-dot superstructures

    UFN, 165:2 (1995),  224–225
  88. Growth of GaAs-AlAs quantum clusters on faceted GaAs surface oriented not aling to (100) by the method of molecular-beam epitaxy

    Fizika i Tekhnika Poluprovodnikov, 26:10 (1992),  1715–1722
  89. Phonon-plasmon modes in raman spectra of $n$-Al$_{x}$Ga$_{1-x}$As epitaxial layers

    Fizika i Tekhnika Poluprovodnikov, 26:4 (1992),  614–628
  90. In$_{0.53}$Ga$_{0.47}$As/In$_{0.88}$Ga$_{0.12}$As$_{0.23}$P$_{0.77}$-гетероструктуры с двумерным электронным газом

    Fizika i Tekhnika Poluprovodnikov, 25:5 (1991),  908–912
  91. Комбинационное рассеяние света на смешанных $LO$-фонон-плазмонных колебаниях в двухмодовых твердых растворах $n$-Al$_{x}$Ga$_{1-x}$As ($x>0.4$)

    Fizika i Tekhnika Poluprovodnikov, 24:9 (1990),  1539–1549
  92. Получение методом молекулярно-пучковой эпитаксии гетероструктур GaSb/InAs/GaSb с высокой подвижностью двумерных электронов

    Fizika i Tekhnika Poluprovodnikov, 24:4 (1990),  717–719
  93. Растекание и поверхностная рекомбинация неравновесных носителей в квантово-размерных (Al, Ga)As ДГС РО лазерах с широким полоском

    Fizika i Tekhnika Poluprovodnikov, 24:1 (1990),  152–158
  94. EFFECT OF PHOTOINDUCED ELECTRON-HOLE PLASMA DECOMPOSITION IN SINGULAR SELECTIVE-ALLOYED HETEROSTRUCTURES

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:20 (1990),  90–95
  95. HYDROGEN EFFECT ON OPTICAL AND TRANSPORT-PROPERTIES OF EPITAXIAL LAYERS OF ALGAAS-SI

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:20 (1990),  1–5
  96. 2-DIMENSIONAL ELECTRON-GAS IN IN0.88GA0.12AS0.23P0.77/IN0.53GA0.47AS HETEROSTRUCTURES GROWN BY LIQUID-PHASE EPITAXY

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:8 (1990),  47–50
  97. Переходы с участием размерно-квантованных подзон в спектре фотолюминесценции $\delta$-легированного GaAs

    Fizika i Tekhnika Poluprovodnikov, 23:12 (1989),  2133–2137
  98. Механизмы нестационарной фотопроводимости в селективно легированных гетероструктурах GaAs/$n$-(Al, Ga)As

    Fizika i Tekhnika Poluprovodnikov, 23:8 (1989),  1382–1385
  99. О «нулевых осцилляциях» в структурах с двумерным электронным газом

    Fizika i Tekhnika Poluprovodnikov, 23:6 (1989),  1110–1113
  100. Особенности эффекта устойчивой фотопроводимости в селективно легированных двойных гетероструктурах GaAs/$n$-(Al, Ga)As

    Fizika i Tekhnika Poluprovodnikov, 23:5 (1989),  845–848
  101. Фотолюминесцентные свойства твердых растворов In$_{0.53}$Ga$_{0.47}$As, легированных рением

    Fizika i Tekhnika Poluprovodnikov, 23:4 (1989),  612–615
  102. INCREASING OF MOBILITY OF TWO-DIMENSIONAL ELECTRONS ON ALAS/GAAS HETEROBOUNDARY AS COMPARED TO ALGAAS/GAAS IN HETEROSTRUCTURES WITH SELECTIVE DELTA-ALLOYING

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:8 (1989),  68–71
  103. REDUCTION OF THRESHOLD CURRENT-DENSITY IN GAAS-ALGAAS DHS QUANTUM-DIMENSIONAL LASERS(JN=52ACM-2,T=300-K) UNDER THE LIMITATION OF A QUANTUM HOLE BY THE SHORT-PERIOD SUPERLATTICE WITH VARIABLE-PITCH

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:19 (1988),  1803–1807
  104. Intrinsic Luminescence of GaAs$-$Al$_{x}$Ga$_{1-x}$As Sharp HelerojimcLiou

    Fizika i Tekhnika Poluprovodnikov, 20:2 (1986),  353–356
  105. Lasers based on heterostructures with active areas limited by multilayered lattices

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:9 (1986),  562–565
  106. EFFECT OF GROWTH-CONDITIONS ON THE HUM ADDITIONS IN GAAS ALLOYED LAYERS GROWN BY MBE METHODS

    Zhurnal Tekhnicheskoi Fiziki, 55:1 (1985),  142–147
  107. Galvanomagnetic Effects in $N$-Al$_{0.3}$Ga$_{0.7}$As/GaAs Heterostructures under high Level Doped

    Fizika i Tekhnika Poluprovodnikov, 19:7 (1985),  1199–1203
  108. Effect of Growth Conditions on the Implantation of Background Impurities into Undoped GaAs Epitaxial Layers Grown by the Method of Molecular-Beam Epitaxy

    Fizika i Tekhnika Poluprovodnikov, 18:2 (1984),  270–274
  109. ROLE OF THE TRANSITION LAYER IN COERCIVITY OF EPITAXIAL FERRITE-GARNET FILMS

    Zhurnal Tekhnicheskoi Fiziki, 53:7 (1983),  1376–1378
  110. PECULIARITIES OF DYNAMIC PROPERTIES OF PERIODICAL DOMAIN-STRUCTURES

    Zhurnal Tekhnicheskoi Fiziki, 53:7 (1983),  1358–1360

  111. Андрей Георгиевич Забродский, к 75-летию со дня рождения

    Zhurnal Tekhnicheskoi Fiziki, 91:6 (2021),  893–894

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