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Mokhov Evgenii Nikolaevich

Publications in Math-Net.Ru

  1. NV$^-$-centers in diamond and silicon carbide as the basis for room-temperature masers

    Fizika Tverdogo Tela, 67:9 (2025),  1647–1653
  2. High-temperature diffusion of beryllium in AlN as an area to solve problem of $p$-type doping and reduce intensity of optical absorption

    Fizika Tverdogo Tela, 67:6 (2025),  940–945
  3. Isotopically modified silicon carbide: a semiconductor platform for quantum technologies

    Fizika Tverdogo Tela, 67:1 (2025),  114–120
  4. Creating NV$^-$-defects in silicon carbide 6$H$–SiC by irradiation with high-energy electrons

    Fizika Tverdogo Tela, 66:4 (2024),  537–541
  5. Optical spin initialization of nitrogen vacancy centers in a $^{28}$Si-enriched 6H-SiC crystal for quantum technologies

    Pis'ma v Zh. Èksper. Teoret. Fiz., 119:8 (2024),  587–592
  6. Influence of photoexcitation conditions on the spin polarization of nitrogen-vacancy centers in isotopically enriched silicon carbide $6$H-$^{28}$SiC

    Uchenye Zapiski Kazanskogo Universiteta. Seriya Fiziko-Matematicheskie Nauki, 166:2 (2024),  187–199
  7. Synchrotron radiation effect on the AlN thermal conductivity

    Fizika Tverdogo Tela, 65:10 (2023),  1848–1853
  8. Identification of optically active quartet spin centers based on a Si vacancy in SiC promising for quantum technologies

    Pis'ma v Zh. Èksper. Teoret. Fiz., 118:9 (2023),  639–648
  9. Manifestations of electron-nuclear interactions in the high-frequency ENDOR/ODMR spectra for triplet Si-C divacancies in $^{13}$C-enriched SiC

    Pis'ma v Zh. Èksper. Teoret. Fiz., 116:7 (2022),  481–489
  10. Growth of hexagonal boron nitride (hBN) on silicon carbide substrates by the physical vapor transport method

    Fizika i Tekhnika Poluprovodnikov, 56:10 (2022),  1011–1015
  11. The effect of liquid Silicon on the AlN crystal growth

    Fizika i Tekhnika Poluprovodnikov, 56:6 (2022),  527
  12. High-temperature diffusion of the acceptor impurity Be in AlN

    Fizika i Tekhnika Poluprovodnikov, 56:3 (2022),  275–278
  13. Fully optical detection of hyperfine electron–nuclear interactions in spin centers in 6h-sic crystals with a modified 13c isotope content

    Pis'ma v Zh. Èksper. Teoret. Fiz., 114:8 (2021),  533–540
  14. Effect of mechanical stress on the splitting of spin sublevels in 4H-SiC

    Pis'ma v Zh. Èksper. Teoret. Fiz., 114:5 (2021),  323–327
  15. Origin of green coloration in AlN crystals grown on SiC seeds

    Fizika i Tekhnika Poluprovodnikov, 55:6 (2021),  513–517
  16. On the Raman scattering, infrared absorption, and luminescence spectroscopy of aluminum nitride doped with beryllium

    Fizika i Tekhnika Poluprovodnikov, 55:3 (2021),  251–255
  17. High-temperature spin manipulation on color centers in rhombic silicon carbide polytype 21R-SiC

    Pis'ma v Zh. Èksper. Teoret. Fiz., 112:12 (2020),  813–819
  18. Effect of the beryllium acceptor impurity upon the optical properties of single-crystal AlN

    Fizika i Tekhnika Poluprovodnikov, 54:3 (2020),  224–227
  19. Growing bulk aluminum nitride and gallium nitride crystals by the sublimation sandwich method

    Fizika Tverdogo Tela, 61:12 (2019),  2298–2302
  20. Raman scattering in AlN crystals grown by sublimation on SiC и AlN seeds

    Fizika i Tekhnika Poluprovodnikov, 53:11 (2019),  1593–1596
  21. SiC-based electronics (100th anniversary of the Ioffe Institute)

    UFN, 189:8 (2019),  803–848
  22. Group III acceptors with shallow and deep levels in silicon carbide: ESR and ENDOR studies

    Fizika Tverdogo Tela, 60:4 (2018),  641–659
  23. Raman spectra of thick epitaxial GaN layers formed on SiC by the sublimation sandwich method

    Fizika i Tekhnika Poluprovodnikov, 52:9 (2018),  1104–1106
  24. Influence of neutron irradiation on etching of SiC in KOH

    Zhurnal Tekhnicheskoi Fiziki, 87:7 (2017),  1104–1106
  25. Electronic structure and spatial distribution of the spin density of shallow nitrogen donors in the SiC lattice

    Fizika Tverdogo Tela, 58:12 (2016),  2319–2335
  26. Spin centres in SiC for all-optical nanoscale quantum sensing under ambient conditions

    Pis'ma v Zh. Èksper. Teoret. Fiz., 104:2 (2016),  83
  27. An optical quantum magnetometer with submicron resolution based on the level anticrossing phenomenon

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:12 (2016),  22–29
  28. Absorption spectra of bulk aluminum nitride crystals doped with Er$^{3+}$ ions

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:3 (2016),  91–96
  29. Prevention of AlN crystal from cracking on SiC substrates by evaporation of the substrates

    Fizika Tverdogo Tela, 57:12 (2015),  2400–2404
  30. Mechanisms of the formation of morphological features of micropipes in bulk crystals of silicon carbide

    Fizika Tverdogo Tela, 57:4 (2015),  733–740
  31. Non-steady-state photoelectromotive force in SiC crystals irradiated by reactor neutrons

    Fizika Tverdogo Tela, 56:10 (2014),  1879–1885
  32. Identification of nitrogen vacancies in an AlN single crystal: EPR and thermoluminescence investigations

    Fizika Tverdogo Tela, 53:6 (2011),  1121–1125
  33. Diffusion in porous silicon carbide

    Fizika Tverdogo Tela, 53:5 (2011),  885–891
  34. Comparison of the homoepitaxial growth of AlN crystals on Al and N surfaces

    Fizika i Tekhnika Poluprovodnikov, 45:11 (2011),  1576–1578
  35. Model of boron diffusion from gas phase in silicon carbide

    Fizika i Tekhnika Poluprovodnikov, 45:6 (2011),  721–728
  36. Structural perfection of silicon carbide crystals grown on profiled seeds by sublimation method

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:21 (2011),  25–32
  37. Dependence of the growth rate of an AlN layer on nitrogen pressure in a reactor for sublimation growth of AlN crystals

    Fizika i Tekhnika Poluprovodnikov, 44:10 (2010),  1430–1432
  38. EPR identification of the triplet ground state and photoinduced population inversion for a Si-C divacancy in silicon carbide

    Pis'ma v Zh. Èksper. Teoret. Fiz., 82:7 (2005),  494–497
  39. Effect of impurities and inherent defects on the physicomechanical properties of silicon carbide single crystals

    Fizika Tverdogo Tela, 34:9 (1992),  2748–2752
  40. Phosphorus diffusion in silicon carbide

    Fizika Tverdogo Tela, 34:6 (1992),  1956–1958
  41. Light-emmiting diodes based on silicon carbide irradiated by fast electrons

    Fizika i Tekhnika Poluprovodnikov, 26:11 (1992),  1857–1860
  42. Double electron-nuclear resonance and electron structure of boron impurity centers in 6$H$-SiC

    Fizika i Tekhnika Poluprovodnikov, 26:9 (1992),  1556–1564
  43. Ultraviolet silicon-carbide photodetectors

    Fizika i Tekhnika Poluprovodnikov, 26:6 (1992),  1008–1014
  44. Effective green light-emitting diodes on silicon carbide

    Fizika i Tekhnika Poluprovodnikov, 26:1 (1992),  107–110
  45. 6H SIC BORON-ALLOYED AND NITROGEN-ALLOYED EPITAXIAL LAYERS GROWN BY THE SUBLIMATION SANDWICH METHOD IN SILICON EXCESS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:14 (1992),  41–45
  46. О переносе примеси фосфора из сублимирующегося источника SiC в эпитаксиальный слой

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:6 (1992),  59–62
  47. Epr in the $2$ mm range and optical intrinsic defect absorption in $4H$ $\mathrm{SiC}$ epitaxial layers

    Fizika Tverdogo Tela, 33:11 (1991),  3315–3326
  48. Люминесценция эпитаксиальных слоев $6H$-SiC, облученных быстрыми электронами

    Fizika i Tekhnika Poluprovodnikov, 25:4 (1991),  762–766
  49. Motion of surface damage-induced dislocations in $\mathrm{SiC}$

    Fizika Tverdogo Tela, 32:8 (1990),  2311–2315
  50. Hopping conduction effects in the ESR spectra of heavily nitrogen-doped $4H\mathrm{SiC}$

    Fizika Tverdogo Tela, 32:3 (1990),  818–825
  51. Effect of $\mathrm{Ge}$ and excess $\mathrm{Si}$ on the ESR spectrum of nitrogen donor states in $6H\mathrm{SiC}$

    Fizika Tverdogo Tela, 32:3 (1990),  789–795
  52. NITROGEN ALLOYING OF SIC EPITAXIAL LAYERS UNDER THE SUBLIMATION SANDWICH-METHOD GROWTH IN VACUUM

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:14 (1990),  33–37
  53. ELECTROLUMINESCENCE OF 6H-SIC, ALLOYED BY GA AND N

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:14 (1990),  25–30
  54. VIOLET LIGHT DIODES BASED ON 6H/4H-SIC[GA,N] HETEROEPITAXIAL LAYERS GROWN BY THE SUBLIMATION SANDWICH-METHOD

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:14 (1990),  19–22
  55. ESR spectra of nonequivalent nitrogen sites in $15R$ $\mathrm{SiC}$

    Fizika Tverdogo Tela, 31:3 (1989),  50–59
  56. Позитронная диагностика вакансионных дефектов в облученном электронами карбиде кремния

    Fizika i Tekhnika Poluprovodnikov, 23:12 (1989),  2159–2163
  57. Позитронная диагностика дефектов в карбиде кремния, облученном нейтронами

    Fizika i Tekhnika Poluprovodnikov, 23:7 (1989),  1270–1274
  58. OBSERVATION OF PHASE-TRANSFORMATIONS IN MATRIX-ADMIXTURE-VACANCY DEFECTS SYSTEMS BY THE POSITRON-ANNIHILATION TECHNIQUE

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:24 (1989),  79–83
  59. HIGH-TEMPERATURE LUMINESCENCE IN 6H-SIC IN ALLOYED GA AND N

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:17 (1989),  38–41
  60. CATHODIC LUMINESCENCE OF SIC-6H ALLOYED BY GA UNDER THE HIGH DEGREE OF EXCITATION

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:15 (1989),  60–64
  61. CLUSTERIZATION OF VACANCIES DURING THERMAL ANNEALING OF SILICON-CARBIDE IRRADIATED BY HEAVY-IONS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:12 (1989),  24–27
  62. Defect formation under the annealing of neutron-irradiated $\mathrm{SiC}$

    Fizika Tverdogo Tela, 30:9 (1988),  2606–2610
  63. Isoconcentrational boron diffusion in $\mathrm{SiC}$

    Fizika Tverdogo Tela, 30:1 (1988),  248–251
  64. PHOTODIODES WITH EMISSION IN THE GREEN AREA OF SPECTRUM BASED ON HETEROEPITAXIAL LAYERS OF SILICON-CARBIDE OF 4H-POLYTYPE

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:24 (1988),  2222–2226
  65. Electric Properties of $p{-}n{-}n^{+}$ Structure in Silicon Carbide Produced by Ionic Doping of Aluminum

    Fizika i Tekhnika Poluprovodnikov, 21:9 (1987),  1685–1689
  66. Peculiarities of High-Temperature Luminescence of Boron-Doped Silicon Carbide Epitaxial Layers

    Fizika i Tekhnika Poluprovodnikov, 21:2 (1987),  207–211
  67. Origination of structural ruptures in epitaxial layers of silicon-carbide

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:11 (1987),  641–645
  68. The paramagnetic and electric properties of the neutron transmutation produced phosphorus impurity in $6H$ – $\mathrm{SiC}$

    Fizika Tverdogo Tela, 28:6 (1986),  1659–1664
  69. Effect of Growth Conditions on Thermal Stability of Defect Luminescence with D$_1$ Spectrum in Neutron-Irpadiated $6H$-SiC

    Fizika i Tekhnika Poluprovodnikov, 20:12 (1986),  2153–2158
  70. Origination of Defect Luminescence with D$_{1}$ Spectrum in $6H$-SiC under Generation of Excess Carbon Vacancies

    Fizika i Tekhnika Poluprovodnikov, 20:8 (1986),  1433–1437
  71. Parametric voltage stabilizer based on silicon-carbide

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:5 (1986),  261–264
  72. Lithium diffusion, solubility and electron-paramagnetic-res in $\mathrm{SiC}$

    Fizika Tverdogo Tela, 27:11 (1985),  3479–3481
  73. Electron-paramagnetic-res in $\mathrm{SiC}$ doped with boron

    Fizika Tverdogo Tela, 27:2 (1985),  322–329
  74. Collision Ionization in Silicon-Carbide Polytypes

    Fizika i Tekhnika Poluprovodnikov, 19:5 (1985),  814–818
  75. ODMR in $\alpha-Si\,C$, alloyed by boron

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:19 (1985),  1168–1172
  76. Отжиг радиационных дефектов в $n$-SiC ($6H$), обученном нейтронами

    Fizika i Tekhnika Poluprovodnikov, 18:11 (1984),  2014–2019
  77. Электрические свойства сильно легированного $6H\text{-SiC}\langle\text{Al}\rangle$, облученного нейтронами

    Fizika i Tekhnika Poluprovodnikov, 18:10 (1984),  1911–1913
  78. Cathodoluminescence of SiC Ion-Doped by Aland Ar

    Fizika i Tekhnika Poluprovodnikov, 18:4 (1984),  700–703
  79. Boron Diffusion in $p$-Type Silicon Carbide

    Fizika i Tekhnika Poluprovodnikov, 18:1 (1984),  49–53
  80. CHARACTERISTICS OF CASCADE BREAKDOWN IN ALPHA-CARBIDE SILICON-MATERIAL WITH NATURAL SUPER-LATTICE

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:5 (1984),  303–306
  81. Прыжковая проводимость в $6H$-SiC, легированном Al

    Fizika i Tekhnika Poluprovodnikov, 17:1 (1983),  115–118

© Steklov Math. Inst. of RAS, 2026