Varavin Vasily Semionovich

Publications in Math-Net.Ru

1. Optical properties of indium-doped Hg$_{0.3}$Cd$_{0.7}$Te epitaxial films
   
   Fizika Tverdogo Tela, 67:5 (2025),  805–809
2. Thermal annealing of CdTe-rich HgCdTe: structural and optical studies
   
   Fizika Tverdogo Tela, 67:1 (2025),  22–27
3. Infrared photoreflectance of Cd$_{0.3}$Hg$_{0.7}$Te epitaxial films
   
   Fizika i Tekhnika Poluprovodnikov, 58:10 (2024),  544–547
4. New recombination centers in MBE MCT layers on (013) GaAs substrates
   
   Fizika Tverdogo Tela, 65:1 (2023),  56–62
5. Photoluminescence of Hg$_{0.3}$Cd$_{0.7}$Te and Hg$_{0.7}$Cd$_{0.3}$Te epitaxial films
   
   Fizika i Tekhnika Poluprovodnikov, 57:8 (2023),  640–643
6. Photoluminescence of arsenic doped epitaxial films of Cd$_{0.3}$Hg$_{0.7}$Te
   
   Fizika i Tekhnika Poluprovodnikov, 57:6 (2023),  491–494
7. Water – a source electrically active centres in CdHgTe
   
   Fizika i Tekhnika Poluprovodnikov, 57:2 (2023),  114–119
8. Formation of acceptor centers in CdHgTe as a result of water and heat treatments
   
   Fizika i Tekhnika Poluprovodnikov, 55:4 (2021),  331–335
9. The effect of As$^+$ ion implantation and annealing on the electrical properties of near-surface layers in graded-gap $n$-Hg$_{0.78}$Cd$_{0.22}$Te films
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:4 (2021),  33–35
10. Evolution of the impurity photoconductivity in CdHgTe epitaxial films with temperature
    
    Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1297–1302
11. An optical study of disordering in cadmium mercury telluride solid solutions
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:11 (2019),  24–27
12. Electrophysical properties of $p$-type undoped and arsenic-doped Hg$_{1-x}$Cd$_{x}$Te epitaxial layers with $x\approx$ 0.4 grown by the MOCVD method
    
    Fizika i Tekhnika Poluprovodnikov, 52:6 (2018),  554–559
13. Electrophysical properties of Cd$_{x}$Hg$_{1-x}$Te ($x$ = 0.3) films grown by molecular beam epitaxy on Si(013) substrates
    
    Fizika Tverdogo Tela, 58:4 (2016),  625–629
14. Mercury vacancies as divalent acceptors in HgTe/Cd$_{x}$Hg$_{1-x}$Te structures with quantum wells
    
    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1690–1696
15. CdHgTe heterostructures for new-generation IR photodetectors operating at elevated temperatures
    
    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1652–1656
16. Defects in mercury-cadmium telluride heteroepitaxial structures grown by molecular-beam epitaxy on silicon substrates
    
    Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  208–211
17. Density of dislocations in CdHgTe heteroepitaxial structures on GaAs(013) and Si(013) substrates
    
    Fizika Tverdogo Tela, 57:11 (2015),  2095–2101
18. Impurity-induced photoconductivity of narrow-gap Cadmium–Mercury–Telluride structures
    
    Fizika i Tekhnika Poluprovodnikov, 49:12 (2015),  1654–1659
19. Acceptor states in heteroepitaxial CdHgTe films grown by molecular-beam epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 49:3 (2015),  379–384
20. CdHgTe heterostructures on large-area Si(310) substrates for infrared photodetector arrays of the short-wavelength spectral range
    
    Fizika i Tekhnika Poluprovodnikov, 48:6 (2014),  788–792
21. Photoluminescence of CdHgTe solid solutions subjected to low-energy ion treatment
    
    Fizika i Tekhnika Poluprovodnikov, 48:2 (2014),  207–211
22. Defects in heteroepitaxial CdHgTe/Si layers and their behavior under conditions of implanted $p^+$–$n$ photodiode structure formation
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:16 (2014),  65–72
23. Dual-wavelength stimulated emission from a double-layer Cd$_x$Hg$_{1-x}$Te structure at wavelengths of 2 and 3 $\mu$m
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 97:6 (2013),  404–408
24. High-temperature photoluminescence of CdHgTe solid solutions grown by molecular-beam epitaxy
    
    Zhurnal Tekhnicheskoi Fiziki, 83:10 (2013),  147–150
25. Electrical and optical properties of CdHgTe films grown by molecular-beam epitaxy on silicon substrates
    
    Fizika i Tekhnika Poluprovodnikov, 46:10 (2012),  1363–1367
26. Photoelectric characteristics of diodes in prototype photosensitive pixels for a monolithic array infrared photodetector
    
    Fizika i Tekhnika Poluprovodnikov, 46:4 (2012),  551–557
27. Relaxation of a radiation-damaged layer formed during ion-beam milling of CdHgTe solid solutions
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:24 (2012),  10–17
28. Photoluminescence of Hg$_{1-x}$Cd$_x$Te based heterostructures grown by molecular-beam epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 45:7 (2011),  900–907
29. The influence of hydrogenation on the electrical properties of the Cd$_x$Hg$_{1-x}$Te epitaxial structures
    
    Fizika i Tekhnika Poluprovodnikov, 45:3 (2011),  408–413
30. HgCdTe heterostructures on Si (310) substrates for midinfrared focal plane arrays
    
    Fizika i Tekhnika Poluprovodnikov, 45:3 (2011),  396–402
31. Infrared focal plane assemblies based on HgCdTe/Si(310) heterostructure
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:4 (2011),  1–7
32. Stimulated radiation at a wavelength of 2.5 $\mu$m at room temperature from optically excited Cd$_x$ Hg$_{1-x}$Te-based structures
    
    Fizika i Tekhnika Poluprovodnikov, 44:4 (2010),  476–481
33. Photoluminescence of CdHgTe based nanoheterostructures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:23 (2010),  70–77
34. Photoluminescence of CdHgTe epilayers grown on silicon substrates
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:23 (2010),  39–46
35. Observation of antiphase domains in Cd_xHg_1−xTe films on silicon by the phase contrast method in atomic force microscopy
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 82:5 (2005),  326–330