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Yakushev Maksim Vitalyevich

Publications in Math-Net.Ru

  1. Influence of radiative heat transfer on growth temperature during epitaxy of HgCdTe layers

    Fizika i Tekhnika Poluprovodnikov, 59:3 (2025),  153–159
  2. Infrared photoreflectance of Cd$_{0.3}$Hg$_{0.7}$Te epitaxial films

    Fizika i Tekhnika Poluprovodnikov, 58:10 (2024),  544–547
  3. Temperature dependence of the spectra of optical constants of CdTe in the region of the absorption edge

    Optics and Spectroscopy, 131:9 (2023),  1213–1218
  4. Photoluminescence of Hg$_{0.3}$Cd$_{0.7}$Te and Hg$_{0.7}$Cd$_{0.3}$Te epitaxial films

    Fizika i Tekhnika Poluprovodnikov, 57:8 (2023),  640–643
  5. Photoluminescence of arsenic doped epitaxial films of Cd$_{0.3}$Hg$_{0.7}$Te

    Fizika i Tekhnika Poluprovodnikov, 57:6 (2023),  491–494
  6. In situ ellipsometric control of growth processes of ZnTe and CdTe buffer layers in technology of molecular beam epitaxy of mercury cadmium telluride

    Fizika i Tekhnika Poluprovodnikov, 57:6 (2023),  469–475
  7. Photomodulation optical spectroscopy of CdHgTe graded band gap heterostructures

    Fizika i Tekhnika Poluprovodnikov, 57:6 (2023),  426–431
  8. Investigation of the temperature dependence of the spectra of optical constants of Hg$_{1-x}$Cd$_{x}$Te films grown using molecular beam epitaxy

    Optics and Spectroscopy, 129:1 (2021),  33–40
  9. In situ ellipsometric monitoring of composition and temperature of HgCdTe layers during their growth

    Fizika i Tekhnika Poluprovodnikov, 55:12 (2021),  1240–1247
  10. Admittance of MIS structures based on $nBn$ systems of epitaxial HgCdTe for detection in the 3–5 $\mu$m spectral range

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:12 (2021),  34–37
  11. The effect of As$^+$ ion implantation and annealing on the electrical properties of near-surface layers in graded-gap $n$-Hg$_{0.78}$Cd$_{0.22}$Te films

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:4 (2021),  33–35
  12. Possibilities of characterizing the crystal parameters of Cd$_{x}$Hg$_{1-x}$Te structures on GaAs substrates by the method of generation of the probe-radiation second harmonic in reflection geometry

    Fizika Tverdogo Tela, 62:2 (2020),  214–221
  13. Parametric model of the optical constant spectra of Hg$_{1-x}$Cd$_{x}$Te and determination of the compound composition

    Optics and Spectroscopy, 128:12 (2020),  1815–1820
  14. Optical and structural properties of HgCdTe solid solutions with a high CdTe content

    Fizika i Tekhnika Poluprovodnikov, 54:12 (2020),  1302–1308
  15. The effect of the growth temperature on the passivating properties of the Al$_{2}$O$_{3}$ films formed by atomic layer deposition on the CdHgTe surface

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:15 (2020),  14–17
  16. Ellipsometric method for measuring the CdTe buffer-layer temperature in the molecular-beam epitaxy of CdHgTe

    Fizika i Tekhnika Poluprovodnikov, 53:1 (2019),  137–142
  17. An optical study of disordering in cadmium mercury telluride solid solutions

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:11 (2019),  24–27
  18. Electrophysical properties of Cd$_{x}$Hg$_{1-x}$Te ($x$ = 0.3) films grown by molecular beam epitaxy on Si(013) substrates

    Fizika Tverdogo Tela, 58:4 (2016),  625–629
  19. CdHgTe heterostructures for new-generation IR photodetectors operating at elevated temperatures

    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1652–1656
  20. Defects in mercury-cadmium telluride heteroepitaxial structures grown by molecular-beam epitaxy on silicon substrates

    Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  208–211
  21. Density of dislocations in CdHgTe heteroepitaxial structures on GaAs(013) and Si(013) substrates

    Fizika Tverdogo Tela, 57:11 (2015),  2095–2101
  22. CdHgTe heterostructures on large-area Si(310) substrates for infrared photodetector arrays of the short-wavelength spectral range

    Fizika i Tekhnika Poluprovodnikov, 48:6 (2014),  788–792
  23. Photoluminescence of CdHgTe solid solutions subjected to low-energy ion treatment

    Fizika i Tekhnika Poluprovodnikov, 48:2 (2014),  207–211
  24. Defects in heteroepitaxial CdHgTe/Si layers and their behavior under conditions of implanted $p^+$–$n$ photodiode structure formation

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:16 (2014),  65–72
  25. Dual-wavelength stimulated emission from a double-layer Cd$_x$Hg$_{1-x}$Te structure at wavelengths of 2 and 3 $\mu$m

    Pis'ma v Zh. Èksper. Teoret. Fiz., 97:6 (2013),  404–408
  26. High-temperature photoluminescence of CdHgTe solid solutions grown by molecular-beam epitaxy

    Zhurnal Tekhnicheskoi Fiziki, 83:10 (2013),  147–150
  27. Electrical and optical properties of CdHgTe films grown by molecular-beam epitaxy on silicon substrates

    Fizika i Tekhnika Poluprovodnikov, 46:10 (2012),  1363–1367
  28. Photoelectric characteristics of diodes in prototype photosensitive pixels for a monolithic array infrared photodetector

    Fizika i Tekhnika Poluprovodnikov, 46:4 (2012),  551–557
  29. Defects in the crystal structure of Cd$_x$Hg$_{1-x}$Te layers grown on the Si (310) substrates

    Fizika i Tekhnika Poluprovodnikov, 45:7 (2011),  956–964
  30. Photoluminescence of Hg$_{1-x}$Cd$_x$Te based heterostructures grown by molecular-beam epitaxy

    Fizika i Tekhnika Poluprovodnikov, 45:7 (2011),  900–907
  31. HgCdTe heterostructures on Si (310) substrates for midinfrared focal plane arrays

    Fizika i Tekhnika Poluprovodnikov, 45:3 (2011),  396–402
  32. Infrared focal plane assemblies based on HgCdTe/Si(310) heterostructure

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:4 (2011),  1–7
  33. Monitoring the composition of the Cd$_{1-z}$Zn$_z$Te heteroepitaxial layers by spectroscopic ellipsometry

    Fizika i Tekhnika Poluprovodnikov, 44:1 (2010),  62–68
  34. Photoluminescence of CdHgTe epilayers grown on silicon substrates

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:23 (2010),  39–46
  35. Observation of antiphase domains in CdxHg1−xTe films on silicon by the phase contrast method in atomic force microscopy

    Pis'ma v Zh. Èksper. Teoret. Fiz., 82:5 (2005),  326–330

© Steklov Math. Inst. of RAS, 2026