|
|
Publications in Math-Net.Ru
-
Water – a source electrically active centres in CdHgTe
Fizika i Tekhnika Poluprovodnikov, 57:2 (2023), 114–119
-
Formation of acceptor centers in CdHgTe as a result of water and heat treatments
Fizika i Tekhnika Poluprovodnikov, 55:4 (2021), 331–335
-
The effect of the growth temperature on the passivating properties of the Al$_{2}$O$_{3}$ films formed by atomic layer deposition on the CdHgTe surface
Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:15 (2020), 14–17
-
CdHgTe heterostructures for new-generation IR photodetectors operating at elevated temperatures
Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1652–1656
-
Density of dislocations in CdHgTe heteroepitaxial structures on GaAs(013) and Si(013) substrates
Fizika Tverdogo Tela, 57:11 (2015), 2095–2101
-
Defects in heteroepitaxial CdHgTe/Si layers and their behavior under conditions of implanted $p^+$–$n$ photodiode structure formation
Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:16 (2014), 65–72
-
Spontaneous composition modulation during Cd$_{x}$Hg$_{1-x}$Te(301) molecular beam epitaxy
Pis'ma v Zh. Èksper. Teoret. Fiz., 94:4 (2011), 348–352
-
Defects in the crystal structure of Cd$_x$Hg$_{1-x}$Te layers grown on the Si (310) substrates
Fizika i Tekhnika Poluprovodnikov, 45:7 (2011), 956–964
-
Photoluminescence of Hg$_{1-x}$Cd$_x$Te based heterostructures grown by molecular-beam epitaxy
Fizika i Tekhnika Poluprovodnikov, 45:7 (2011), 900–907
-
The influence of hydrogenation on the electrical properties of the Cd$_x$Hg$_{1-x}$Te epitaxial structures
Fizika i Tekhnika Poluprovodnikov, 45:3 (2011), 408–413
-
HgCdTe heterostructures on Si (310) substrates for midinfrared focal plane arrays
Fizika i Tekhnika Poluprovodnikov, 45:3 (2011), 396–402
-
Infrared focal plane assemblies based on HgCdTe/Si(310) heterostructure
Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:4 (2011), 1–7
-
Monitoring the composition of the Cd$_{1-z}$Zn$_z$Te heteroepitaxial layers by spectroscopic ellipsometry
Fizika i Tekhnika Poluprovodnikov, 44:1 (2010), 62–68
-
Photoluminescence of CdHgTe based nanoheterostructures
Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:23 (2010), 70–77
-
Photoluminescence of CdHgTe epilayers grown on silicon substrates
Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:23 (2010), 39–46
-
Observation of antiphase domains in CdxHg1−xTe films on silicon by the phase contrast method in atomic force microscopy
Pis'ma v Zh. Èksper. Teoret. Fiz., 82:5 (2005), 326–330
-
Photoluminescence of $\mathrm{CdTe}$ $(111)$ films MBE - grown on $\mathrm{GaAs}$ $(100)$
Fizika Tverdogo Tela, 33:4 (1991), 1155–1160
-
Twinning in $\mathrm{CdTe(111)}$ films on $\mathrm{GaAs(100)}$ substrates
Dokl. Akad. Nauk SSSR, 304:3 (1989), 604–606
© , 2026