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Publications in Math-Net.Ru
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Low-temperature surface treatments of CdHgTe using the PE-ALD method before HfO$_2$ deposition
Fizika i Tekhnika Poluprovodnikov, 58:3 (2024), 120–125
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Investigation of metal–insulator–semiconductor structure based on CdHgTe and HfO$_2$
Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:19 (2022), 16–19
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The effect of the growth temperature on the passivating properties of the Al$_{2}$O$_{3}$ films formed by atomic layer deposition on the CdHgTe surface
Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:15 (2020), 14–17
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CdHgTe heterostructures for new-generation IR photodetectors operating at elevated temperatures
Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1652–1656
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Density of dislocations in CdHgTe heteroepitaxial structures on GaAs(013) and Si(013) substrates
Fizika Tverdogo Tela, 57:11 (2015), 2095–2101
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Photoelectric characteristics of diodes in prototype photosensitive pixels for a monolithic array infrared photodetector
Fizika i Tekhnika Poluprovodnikov, 46:4 (2012), 551–557
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Spontaneous composition modulation during Cd$_{x}$Hg$_{1-x}$Te(301) molecular beam epitaxy
Pis'ma v Zh. Èksper. Teoret. Fiz., 94:4 (2011), 348–352
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Defects in the crystal structure of Cd$_x$Hg$_{1-x}$Te layers grown on the Si (310) substrates
Fizika i Tekhnika Poluprovodnikov, 45:7 (2011), 956–964
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HgCdTe heterostructures on Si (310) substrates for midinfrared focal plane arrays
Fizika i Tekhnika Poluprovodnikov, 45:3 (2011), 396–402
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Infrared focal plane assemblies based on HgCdTe/Si(310) heterostructure
Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:4 (2011), 1–7
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Observation of antiphase domains in CdxHg1−xTe films on silicon by the phase contrast method in atomic force microscopy
Pis'ma v Zh. Èksper. Teoret. Fiz., 82:5 (2005), 326–330
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Photoluminescence of $\mathrm{CdTe}$ $(111)$ films MBE - grown on $\mathrm{GaAs}$ $(100)$
Fizika Tverdogo Tela, 33:4 (1991), 1155–1160
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Twinning in $\mathrm{CdTe(111)}$ films on $\mathrm{GaAs(100)}$ substrates
Dokl. Akad. Nauk SSSR, 304:3 (1989), 604–606
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