Kalinushkin Viktor Petrovich

Publications in Math-Net.Ru

1. The influence of the procedure of iron doping of CVD-ZnSe using high-temperature diffusion on the composition and spatial distribution of impurity-defect centers
   
   Fizika i Tekhnika Poluprovodnikov, 58:12 (2024),  695–702
2. Luminescence characteristics of chromium-doped by high-temperature diffusion CVD–ZnSe
   
   Fizika i Tekhnika Poluprovodnikov, 57:6 (2023),  476–483
3. Peculiarities of concentration quenching of Fe²⁺ luminescence in ZnSe single crystal
   
   Kvantovaya Elektronika, 53:5 (2023),  395–400
4. Effect of annealing atmosphere on the luminescence characteristics of CVD–ZnSe
   
   Fizika i Tekhnika Poluprovodnikov, 56:1 (2022),  85–96
5. Study of spatial distribution of luminescence in the wavelength range of 0.44–0.75 $\mu$m in CVD-ZnSe doped with aluminum and iron
   
   Fizika i Tekhnika Poluprovodnikov, 55:5 (2021),  410–419
6. Effect of annealing in gaseous zinc on luminescence in the visible and middle IR ranges of ZnSe : Fe$^{2+}$
   
   Optics and Spectroscopy, 128:11 (2020),  1710–1716
7. Study of the luminescence power of excitons and impurity–defect centers excited via two-photon absorption
   
   Fizika i Tekhnika Poluprovodnikov, 54:1 (2020),  48–54
8. Kinetics of the luminescence decay of Fe²⁺ impurity centres in polycrystalline ZnSe upon excitation by an electron beam
   
   Kvantovaya Elektronika, 50:8 (2020),  730–733
9. Mid-IR cathodoluminescence of Fe:ZnSe
   
   Optics and Spectroscopy, 126:2 (2019),  122–125
10. Study of the effect of doping with iron on the luminescence of zinc-selenide single crystals
    
    Fizika i Tekhnika Poluprovodnikov, 53:1 (2019),  5–12
11. Free-electron Auger quenching of the Fe²⁺ excited state in ZnSe
    
    Kvantovaya Elektronika, 49:12 (2019),  1175–1177
12. Room- and low-temperature transmission of diffusion-doped Fe²⁺ : ZnSe polycrystal at 2940 nm
    
    Kvantovaya Elektronika, 47:2 (2017),  111–115
13. Two-photon confocal microscopy as a tool for nonequilibrium charge-carrier lifetime tomography in semiconductor materials
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 104:11 (2016),  774–779
14. Two-photon confocal microscopy in the study of the volume characteristics of semiconductors
    
    Zhurnal Tekhnicheskoi Fiziki, 86:12 (2016),  119–123
15. IR luminescence of F²⁺ : ZnSe single crystals excited by an electron beam
    
    Kvantovaya Elektronika, 46:6 (2016),  545–547
16. Fe²⁺ : ZnSe laser pumped by a nonchain electric-discharge HF laser at room temperature
    
    Kvantovaya Elektronika, 44:2 (2014),  141–144
17. EPR diagnostics of laser materials based on ZnSe crystals doped with transition elements
    
    Fizika Tverdogo Tela, 55:2 (2013),  234–242
18. Поглощение терагерцового излучения в гетероструктурах Ge/Si(001) с квантовыми точками
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 92:12 (2010),  877–883
19. Superluminescent room-temperature Fe²⁺:ZnSe IR radiation source
    
    Kvantovaya Elektronika, 38:2 (2008),  95–96
20. Крупномасштабные скопления электрически активных дефектов в монокристаллах фосфида индия
    
    Fizika i Tekhnika Poluprovodnikov, 25:5 (1991),  798–806
21. Dielectric properties of compensated $\mathrm{InP}$ in submillimeter range
    
    Fizika Tverdogo Tela, 32:5 (1990),  1530–1532
22. Submillimeter-range properties ($10^{11}$–$10^{12}$ Hz) of low-resistivity $\mathrm{InP}$ and $\mathrm{GaAs}$
    
    Fizika Tverdogo Tela, 32:5 (1990),  1368–1373
23. Крупномасштабные электрически активные примесные скопления в кристаллах кремния, выращенных методом Чохральского
    
    Fizika i Tekhnika Poluprovodnikov, 24:2 (1990),  264–270
24. Dielectric properties of $\mathrm{Si},\mathrm{Ge}$ and $\mathrm{GaAs}$ in the submillimeter range
    
    Fizika Tverdogo Tela, 31:8 (1989),  101–106
25. Oxygen impurity mode in the submillimeter spectra of $\mathrm{Si}$ single crystals
    
    Fizika Tverdogo Tela, 31:7 (1989),  262–264
26. Влияние быстродиффундирующих примесей на малоугловое рассеяние света в кремнии
    
    Fizika i Tekhnika Poluprovodnikov, 22:7 (1988),  1308–1311
27. Влияние отжига на рассеяние света примесными скоплениями в полуизолирующих кристаллах InP : Fe и GaAs : Cr
    
    Fizika i Tekhnika Poluprovodnikov, 22:6 (1988),  1112–1114
28. Low temperature relaxation of light scattering in silicon
    
    Fizika Tverdogo Tela, 29:3 (1987),  728–733
29. Effect of Sample Temperature on Light Scattering by Impurity Accumulations in Indium Phosphide
    
    Fizika i Tekhnika Poluprovodnikov, 21:12 (1987),  2125–2129
30. Determination of Parameters of Point Centers Forming «Weak» Impurity Aggregates in Semiconductor Materials
    
    Fizika i Tekhnika Poluprovodnikov, 21:8 (1987),  1364–1368
31. Application of sounding radiation with 2 wavelength for detection of the scattering heterogeneities in semiconducting crystals
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:3 (1986),  129–133
32. Temperature of oxygen cloud formation in germanium
    
    Fizika Tverdogo Tela, 27:5 (1985),  1331–1333
33. Interaction of Gold with Impurity Clouds in Silicon
    
    Fizika i Tekhnika Poluprovodnikov, 19:10 (1985),  1902–1904
34. Aggregate of Electrically Active Impurities in Indium-Phosphide Single Crystals
    
    Fizika i Tekhnika Poluprovodnikov, 19:5 (1985),  810–813
35. Absorption of $10{.}6\mu$m laser light in electron-hole condensate in germanium
    
    Dokl. Akad. Nauk SSSR, 279:1 (1984),  88–90
36. Характер электрической активности центров, образующих примесные облака в германии
    
    Fizika i Tekhnika Poluprovodnikov, 18:12 (1984),  2222–2224
37. Новый тип примесных дефектов в полуизолирующем арсениде галлия
    
    Fizika i Tekhnika Poluprovodnikov, 18:8 (1984),  1363–1366
38. Temperature Dependence of Low-Angle Light Scattering by Pure-Silicon Crystals
    
    Fizika i Tekhnika Poluprovodnikov, 18:5 (1984),  938–940
39. Примесные облака и микродефекты в кремнии, выращенном методом Чохральского
    
    Fizika i Tekhnika Poluprovodnikov, 17:12 (1983),  2137–2142
40. Источники образования примесных облаков в германии
    
    Fizika i Tekhnika Poluprovodnikov, 17:4 (1983),  683–685