Zanaveskin Maksim Leonidovich

Publications in Math-Net.Ru

1. Magnetic field characterization of physical properties of two-dimensional electron gas of nitride high electron mobility transistor heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 59:2 (2025),  91–96
2. Heat sink efficiency investigation of silicon-on-diamond composite substrates for gallium nitride-based devices
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:7 (2022),  20–22
3. Gan-on-silicon growth features: controlled plastic deformation
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:14 (2021),  26–29
4. Substrates with diamond heat sink for epitaxial GaN growth
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:7 (2021),  13–16
5. Specifics of heat transfer in Al$_{x}$Ga$_{1-x}$N/GaN heterostructures on sapphire
   
   Fizika Tverdogo Tela, 62:4 (2020),  635–639
6. Quantum coherence and the Kondo effect in the 2D electron gas of magnetically undoped AlGaN/GaN high-electron-mobility transistor heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  962–967
7. Power characteristics of GaN microwave transistors on silicon substrates
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:5 (2020),  11–14
8. Ohmic contacts to europium oxide for spintronic devices
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:7 (2019),  38–40
9. A superconducting joint for 2G HTS tapes
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:7 (2019),  18–20
10. Studying the characteristics of transistors based on gallium nitride heterostructures grown by ammonia molecular beam epitaxy on sapphire and silicon substrates
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:4 (2019),  52–54
11. Tunneling current in oppositely connected Schottky diodes formed by contacts between degenerate $n$-GaN and a metal
    
    Fizika i Tekhnika Poluprovodnikov, 52:6 (2018),  630–636
12. Influence of a low-temperature GaN cap layer on the electron concentration in AlGaN/GaN heterostructure
    
    Zhurnal Tekhnicheskoi Fiziki, 87:8 (2017),  1275–1278
13. Developing an approach based on the formation of YBa$_2$Cu$_3$O$_x$–interlayer–YBa$_2$Cu$_3$O$_x$ epitaxial structures with high current-carrying ability
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:20 (2014),  47–53
14. Selective MBE growth of nonalloyed ohmic contacts to 2D electron gas in high-electron-mobility transistors based on GaN/AlGaN heterojunctions
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:11 (2014),  80–86
15. The effect of the memristor electrode material on its resistance to degradation under conditions of cyclic switching
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:7 (2014),  87–94
16. A study of the effect of the oxygen index of the target on the critical characteristics of YBa$_2$Cu$_3$O$_x$ epitaxial layers formed by pulsed laser deposition
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:1 (2014),  58–63
17. Seed layers on RABiTS tapes for Second-Generation HTS wires
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:18 (2012),  53–59
18. Calculating correlation factor for substrate and film coating profiles according to data of atomic force microscopy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:17 (2012),  1–6
19. Оптические свойства одномерных субволновых плазмонных наноструктур
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 92:11 (2010),  823–826