Grishchenko Yuliya Victorovna

Publications in Math-Net.Ru

1. Magnetic field characterization of physical properties of two-dimensional electron gas of nitride high electron mobility transistor heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 59:2 (2025),  91–96
2. Heat sink efficiency investigation of silicon-on-diamond composite substrates for gallium nitride-based devices
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:7 (2022),  20–22
3. Gan-on-silicon growth features: controlled plastic deformation
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:14 (2021),  26–29
4. Substrates with diamond heat sink for epitaxial GaN growth
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:7 (2021),  13–16
5. Quantum coherence and the Kondo effect in the 2D electron gas of magnetically undoped AlGaN/GaN high-electron-mobility transistor heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  962–967
6. Power characteristics of GaN microwave transistors on silicon substrates
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:5 (2020),  11–14
7. Ohmic contacts to europium oxide for spintronic devices
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:7 (2019),  38–40
8. Studying the characteristics of transistors based on gallium nitride heterostructures grown by ammonia molecular beam epitaxy on sapphire and silicon substrates
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:4 (2019),  52–54
9. Tunneling current in oppositely connected Schottky diodes formed by contacts between degenerate $n$-GaN and a metal
   
   Fizika i Tekhnika Poluprovodnikov, 52:6 (2018),  630–636
10. The effect of the memristor electrode material on its resistance to degradation under conditions of cyclic switching
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:7 (2014),  87–94
11. Calculating correlation factor for substrate and film coating profiles according to data of atomic force microscopy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:17 (2012),  1–6
12. Оптические свойства одномерных субволновых плазмонных наноструктур
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 92:11 (2010),  823–826