Publications in Math-Net.Ru
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Study of Si(100) surface step convergence kinetics
Fizika Tverdogo Tela, 65:2 (2023), 173–179
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Growth of GaAs$_{1-x}$Bi$_x$ layers by molecular-beam epitaxy
Fizika i Tekhnika Poluprovodnikov, 56:3 (2022), 279–284
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X-ray diffraction analysis of epitaxial layers with the properties of a dislocation filter
Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:13 (2018), 19–27
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The structural state of epitaxial GaP films of different polarities grown on misoriented Si(001) substrates
Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:4 (2017), 64–71
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Density of dislocations in CdHgTe heteroepitaxial structures on GaAs(013) and Si(013) substrates
Fizika Tverdogo Tela, 57:11 (2015), 2095–2101
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Initial stages of Ge epitaxy on Si(111) under quasi-equilibrium growth conditions
Pis'ma v Zh. Èksper. Teoret. Fiz., 92:6 (2010), 429–437
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