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Gutakovskii Anton Konstantinovich

Publications in Math-Net.Ru

  1. Comparative crystal structure study of thin films of stoichiometric and non-stoichiometric titanium oxides

    Fizika Tverdogo Tela, 67:6 (2025),  970–977
  2. Synthesis of epitaxial structures with two-dimensional si layers embedded in a CaF$_2$ dielectric matrix

    Pis'ma v Zh. Èksper. Teoret. Fiz., 116:9 (2022),  608–613
  3. InGaAlAs/InAlAs heterostructures for electro-absorption modulator

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:13 (2022),  37–41
  4. Formation of InAs/GaP heterostructures with quantum wells on silicon substrates by molecular beam epitaxy

    Fizika i Tekhnika Poluprovodnikov, 55:2 (2021),  139–146
  5. Forming dislocation pairs in the Ge/GeSi/Si(001) heterostructure

    Fizika Tverdogo Tela, 61:2 (2019),  284–287
  6. Analysis of the properties of metal sulfide nanocrystals synthesized by the Langmuir—Blodgett technique

    Pis'ma v Zh. Èksper. Teoret. Fiz., 109:11 (2019),  734–738
  7. Electron paramagnetic resonance in Ge/Si heterostructures with Mn-doped quantum dots

    Pis'ma v Zh. Èksper. Teoret. Fiz., 109:4 (2019),  258–264
  8. Structure of Hf$_{0.9}$La$_{0.1}$O$_2$ ferroelectric films obtained by the atomic layer deposition

    Pis'ma v Zh. Èksper. Teoret. Fiz., 109:2 (2019),  112–117
  9. GaAs/GaP quantum-well heterostructures grown on Si substrates

    Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1167–1171
  10. Spinodal decomposition in InSb/AlAs heterostructures

    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1280–1285
  11. Strain in ultrathin SiGeSn layers in a silicon matrix

    Pis'ma v Zh. Èksper. Teoret. Fiz., 106:12 (2017),  746–751
  12. Nature of luminescence of PbS quantum dots synthesized in a Langmuir–Blodgett matrix

    Pis'ma v Zh. Èksper. Teoret. Fiz., 106:1 (2017),  21–25
  13. MBE-grown InSb photodetector arrays

    Zhurnal Tekhnicheskoi Fiziki, 87:6 (2017),  900–904
  14. Formation of low-dimensional structures in the InSb/AlAs heterosystem

    Fizika i Tekhnika Poluprovodnikov, 51:9 (2017),  1282–1288
  15. Quantum dots formed in InSb/AlAs and AlSb/AlAs heterostructures

    Pis'ma v Zh. Èksper. Teoret. Fiz., 103:11 (2016),  785–791
  16. Strained multilayer structures with pseudomorphic GeSiSn layers

    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1610–1614
  17. Role of edge dislocations in plastic relaxation of GeSi/Si(001) heterostructures: Dependence of introduction mechanisms on film thickness

    Fizika Tverdogo Tela, 57:4 (2015),  746–752
  18. Linear chains of Ge/Si quantum dots grown on a prepatterned surface formed by ion irradiation

    Fizika i Tekhnika Poluprovodnikov, 49:6 (2015),  767–771
  19. Electroluminescent 1.5-$\mu$m light-emitting diodes based on $p^+$-Si/NC $\beta$-FeSi$_2$/$n$-Si structures

    Fizika i Tekhnika Poluprovodnikov, 49:4 (2015),  519–523
  20. Specific features of plastic relaxation of a metastable Ge$_x$Si$_{1-x}$ layer buried between a silicon substrate and a relaxed germanium layer

    Fizika Tverdogo Tela, 56:2 (2014),  247–253
  21. Coexistence of type-I and type-II band alignment in Ga(Sb,P)/GaP heterostructures with pseudomorphic self-assembled quantum dots

    Pis'ma v Zh. Èksper. Teoret. Fiz., 99:2 (2014),  81–86
  22. Novel self-assembled quantum dots in the GaSb/AlAs heterosystem

    Pis'ma v Zh. Èksper. Teoret. Fiz., 95:10 (2012),  601–603
  23. New system of self-assembled GaSb/GaP quantum dots

    Fizika i Tekhnika Poluprovodnikov, 46:12 (2012),  1571–1575
  24. Strained germanium films in Ge/InGaAs/GaAs heterostructures: Formation of edge misfit dislocations at the Ge/InGaAs interface

    Fizika Tverdogo Tela, 53:10 (2011),  1903–1909
  25. Edge misfit dislocations in Ge$_x$Si$_{1-x}$/Si(001) ($x\sim$ 1) heterostructures: role of buffer Ge$_y$Si$_{1-y}$ $(y<x)$ interlayer in their formation

    Fizika Tverdogo Tela, 53:9 (2011),  1699–1705
  26. Spontaneous composition modulation during Cd$_{x}$Hg$_{1-x}$Te(301) molecular beam epitaxy

    Pis'ma v Zh. Èksper. Teoret. Fiz., 94:4 (2011),  348–352
  27. Defects in the crystal structure of Cd$_x$Hg$_{1-x}$Te layers grown on the Si (310) substrates

    Fizika i Tekhnika Poluprovodnikov, 45:7 (2011),  956–964
  28. Heteroepitaxy of Ge$_x$Si$_{1-x}$ ($x\sim$ 0.4–0.5) films on Si(001) substrates misoriented to (111): Formation of short edge misfit dislocations alone in the misorientation direction

    Fizika Tverdogo Tela, 52:1 (2010),  32–36
  29. Initial stages of Ge epitaxy on Si(111) under quasi-equilibrium growth conditions

    Pis'ma v Zh. Èksper. Teoret. Fiz., 92:6 (2010),  429–437
  30. Observation of antiphase domains in CdxHg1−xTe films on silicon by the phase contrast method in atomic force microscopy

    Pis'ma v Zh. Èksper. Teoret. Fiz., 82:5 (2005),  326–330
  31. Instability of the distribution of atomic steps on Si(111) upon submonolayer gold adsorption at high temperatures

    Pis'ma v Zh. Èksper. Teoret. Fiz., 81:3 (2005),  149–153
  32. Photoluminescence kinetics of wurtzite GaN quantum dots in an AlN matrix

    Pis'ma v Zh. Èksper. Teoret. Fiz., 81:2 (2005),  70–73
  33. Twinning in $\mathrm{CdTe(111)}$ films on $\mathrm{GaAs(100)}$ substrates

    Dokl. Akad. Nauk SSSR, 304:3 (1989),  604–606
  34. Film and interface structure of $\mathrm{GaAs}$- and $\mathrm{InAs}$-based multilayered systems

    Dokl. Akad. Nauk SSSR, 304:2 (1989),  355–357

© Steklov Math. Inst. of RAS, 2026