|
|
Publications in Math-Net.Ru
-
An unusual mechanism of misfit stress relaxation in thin nanofilms
Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:22 (2019), 28–31
-
The reliability of revealing threading dislocations in epitaxial films by structure-sensitive etching
Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:20 (2018), 30–36
-
X-ray diffraction analysis of epitaxial layers with the properties of a dislocation filter
Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:13 (2018), 19–27
-
The structural state of epitaxial GaP films of different polarities grown on misoriented Si(001) substrates
Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:4 (2017), 64–71
-
Density of dislocations in CdHgTe heteroepitaxial structures on GaAs(013) and Si(013) substrates
Fizika Tverdogo Tela, 57:11 (2015), 2095–2101
-
Morphology and structural and electrical parameters of float-zone Si(111) single crystals
Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:15 (2015), 33–39
-
Initial stages of Ge epitaxy on Si(111) under quasi-equilibrium growth conditions
Pis'ma v Zh. Èksper. Teoret. Fiz., 92:6 (2010), 429–437
© , 2026