Lobanov Dmitrii Nikolaevich

Publications in Math-Net.Ru

1. Ultrafast luminescence kinetics and localization effects of nonequilibrium carriers in degenerate $n$-InGaN layers
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 121:8 (2025),  688–695
2. Schottky diodes based on monocrystalline Al/AlGaN/GaN heterostructures for zero-bias microwave detection
   
   Zhurnal Tekhnicheskoi Fiziki, 95:6 (2025),  1148–1156
3. Photoinduced band-gap renormalization in degenerate narrow-gap $n$-InGaN epitaxial films
   
   Fizika i Tekhnika Poluprovodnikov, 59:9 (2025),  563–570
4. Formation of planar structures with InGaN layers for red wavelength light sources
   
   Fizika i Tekhnika Poluprovodnikov, 59:7 (2025),  406–413
5. Growth of atomically smooth AlN layers on Si(111) substrates through an amorphous Si$_x$N$_y$ layer by plasma-assisted molecular beam epitaxy
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:14 (2025),  39–43
6. Influence of the ratio of group III and V fluxes on the structural, emissive properties properties and stimulated emission of planar structures with InGaN layers in the IR range
   
   Fizika i Tekhnika Poluprovodnikov, 58:4 (2024),  220–225
7. Features of formation of In$_x$Ga$_{1-x}$N bulk layers in the immiscibility gap of solid solutions ($x$ $\sim$ 0.6) by molecular beam epitaxy with plasma nitrogen activation
   
   Fizika i Tekhnika Poluprovodnikov, 57:6 (2023),  444–450
8. Formation of heterostructures with multiple quantum wells InN/InGaN by the PA-MBE method on sapphire
   
   Fizika i Tekhnika Poluprovodnikov, 56:9 (2022),  848–854
9. PA MBE growth of intermediate-composition InGaN layers for red and near-IR laser sources
   
   Fizika i Tekhnika Poluprovodnikov, 56:7 (2022),  700–704
10. Features of the structural and optical properties of InGaN layers obtained by the MBE PA method with a pulsed supply of metal flows
    
    Fizika i Tekhnika Poluprovodnikov, 55:9 (2021),  766–772
11. Emission properties of heavily doped epitaxial indium-nitride layers
    
    Fizika i Tekhnika Poluprovodnikov, 53:10 (2019),  1395–1400
12. Specific features of the photoexcitation spectra of epitaxial InN layers grown by molecular-beam epitaxy with the plasma activation of nitrogen
    
    Fizika i Tekhnika Poluprovodnikov, 51:12 (2017),  1594–1598
13. Epitaxial GaN layers formed on langasite substrates by the plasma-assisted MBE method
    
    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1532–1536
14. Features of InN growth by nitrogen-plasma-assisted MBE at different ratios of fluxes of group-III and -V elements
    
    Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  264–268
15. Excitation spectra of photoluminescence and its kinetics in structures with self-assembled Ge:Si nanoislands
    
    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1458–1462
16. Structural and optical properties of metastable SiGe/Si films with a low germanium concentration
    
    Fizika Tverdogo Tela, 56:10 (2014),  1896–1905
17. A new approach to the diagnostics of nanoislands in Ge$_x$Si$_{1-x}$/Si heterostructures by secondary ion mass spectrometry
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:14 (2014),  36–46
18. Study of multilayered SiGe semiconductor structures by X-ray diffractometry, grazing-incidence X-ray reflectometry, and secondary-ion mass spectrometry
    
    Fizika i Tekhnika Poluprovodnikov, 47:12 (2013),  1580–1585
19. Time-resolved photoluminescence from self-assembled Ge(Si) islands in multilayer SiGe/Si and SiGe/SOI structures
    
    Fizika i Tekhnika Poluprovodnikov, 47:11 (2013),  1509–1512
20. Transition from the two- to three-dimensional growth of Ge films upon deposition onto relaxed SiGe/Si(001) buffer layers
    
    Fizika i Tekhnika Poluprovodnikov, 47:3 (2013),  404–409
21. Effect of silicon spacer thickness on the electroluminescence of multilayer structures with self-assembled Ge(Si)/Si(001) islands
    
    Fizika i Tekhnika Poluprovodnikov, 46:11 (2012),  1448–1452
22. Effects of the lateral ordering of self-assembled SiGe nanoislands grown on strained Si$_{1-x}$Ge$_x$ buffer layers
    
    Fizika i Tekhnika Poluprovodnikov, 46:5 (2012),  665–672
23. Photoluminescence excitation spectroscopy technique modified for studying structures with self-assembled Ge(Si)/Si(001) nanoislands
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:18 (2012),  7–15
24. Condensation of excitons and the spectrum of multiparticle states in SiGe/Si quantum wells: The role of the barrier in the conduction band
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 94:1 (2011),  63–67
25. Comparative analysis of radiation effects on the electroluminescence of Si and SiGe/Si(001) heterostructures with self-assembled Islands
    
    Fizika i Tekhnika Poluprovodnikov, 45:2 (2011),  230–234
26. Photoluminescence line width of self-assembled Ge(Si) islands arranged between strained Si layers
    
    Fizika i Tekhnika Poluprovodnikov, 45:2 (2011),  202–206
27. Electron-hole liquid and excitonic molecules in quasi-two-dimensional SiGe layers of Si/SiGe/Si heterostructures
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 92:5 (2010),  341–345
28. Secondary cluster ions Ge$_2^-$ and Ge$_3^-$ for improving depth resolution of SIMS depth profiling of GeSi/Si heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 44:3 (2010),  418–421
29. Effect of irradiation on the luminescence properties of low-dimensional SiGe/Si(001) heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 44:3 (2010),  346–351
30. Low-energy photoluminescence of structures with GeSi/Si(001) self-assembled nanoislands
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 76:6 (2002),  425–429