Kaveev Andrey Kamil'evich

Publications in Math-Net.Ru

1. Study of the influence of current spreading on the operating characteristics of GaP/GaPNAs/GaP micro-leds on Si
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 52:3 (2026),  11–15
2. Physical principles of filtration and the design of terahertz radiation filters
   
   UFN, 196:2 (2026),  182–204
3. Epitaxial growth of thin Ca$_{1-x}$Ba$_x$F$_2$ films on Si(111) and study of electro-physical characteristics of Ca$_{1-x}$Ba$_x$F$_2$ – based metal–insulator–semiconductor structures
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:22 (2025),  26–30
4. Effect of buffer layer on the characteristics of GaPN layers grown by molecular beam epitaxy on silicon substrates
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:10 (2025),  7–10
5. Terahertz polarization converters: physical principles, design, and applications
   
   UFN, 195:3 (2025),  311–333
6. Formation of InAs$_{1-x}$N$_x$ islands and InAs stem-assisted InAs$_{1-x}$N$_x$ nanowires by means of epitaxial growth on silicon
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:17 (2024),  7–10
7. Formation of single and heterostructured nanowires based on $\mathrm{InAs}_{1-x}\mathrm{P}_x$ solid solutions on $\mathrm{Si}(111)$
   
   Fizika i Tekhnika Poluprovodnikov, 57:7 (2023),  526–529
8. Optimization of the buffer dielectric layer for the creation of low-defect epitaxial films of the topological insulator Pb$_{1-x}$Sn$_x$Te with $x\ge$ 0.4
   
   Fizika i Tekhnika Poluprovodnikov, 56:7 (2022),  642–645
9. Structural characterization of Pb$_{0.7}$Sn$_{0.3}$Te crystalline topological insulator thin films grown on Si(111)
   
   Fizika i Tekhnika Poluprovodnikov, 55:8 (2021),  625–628
10. Energy-gap opening near the Dirac point after the deposition of cobalt on the (0001) surface of the topological insulator BiSbTeSe$_{2}$
    
    Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  859–864
11. A study of the crystal structure of Co$_{40}$Fe$_{40}$B$_{20}$ epitaxial films on a Bi$_{2}$Te$_{3}$ topological insulator
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:5 (2018),  10–15
12. Growth of Y$_{3}$Fe$_{5}$O$_{12}$/GaN layers by laser molecular-beam epitaxy and characterization of their structural and magnetic properties
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:23 (2016),  72–78
13. Binary DOE with elongated focal depth to focus terahertz free electron laser radiation (NovoFEL)
    
    Computer Optics, 39:1 (2015),  58–63
14. Control of transverse modal spectrum of terahertz laser irradiation by binary silicon optical elements
    
    Computer Optics, 38:4 (2014),  763–769
15. Silicon optics for focusing of terahertz laser radiation in a given two-dimensional domain
    
    Computer Optics, 37:4 (2013),  464–4700
16. Magnetic order in an MnF₂ epitaxial layer with the orthorhombic structure
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 83:4 (2006),  185–188