Shalygin V A

Publications in Math-Net.Ru

1. Luminescence in $p$–$i$–$n$ structures with compensated quantum wells
   
   Fizika i Tekhnika Poluprovodnikov, 57:8 (2023),  663–673
2. Optical and electrical properties of GaN: Si-based microstructures with a wide range of doping levels
   
   Fizika Tverdogo Tela, 57:4 (2015),  768–774
3. Actual directions of semiconductor physics and nano-structures, semiconductor nano- and optoelectronics(on the 15th all russian youth conference).
   
   SPbSPU Journal. Physics and Mathematics, 2014, no. 1(189),  157–163
4. Exciton spectra and electrical conductivity of epitaxial silicon-doped GaN layers
   
   Fizika Tverdogo Tela, 55:2 (2013),  260–264
5. Lateral photoconductivity in structures with Ge/Si quantum dots
   
   Fizika i Tekhnika Poluprovodnikov, 47:12 (2013),  1599–1603
6. Current-induced spin polarization of holes in tellurium
   
   Fizika Tverdogo Tela, 54:12 (2012),  2237–2247
7. Photoinduced and equilibrium optical absorption in Ge/Si quantum dots
   
   Fizika i Tekhnika Poluprovodnikov, 46:12 (2012),  1566–1570
8. Terahertz emission and photoconductivity in $n$-type GaAs/AlGaAs quantum wells: the role of resonant impurity states
   
   Fizika i Tekhnika Poluprovodnikov, 44:11 (2010),  1443–1446
9. Spin photocurrents and circular photon drag effect in (110)-grown quantum well structures
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 84:10 (2006),  666–672
10. The outlook for the development of radiation sources in the middle-IR range based on the intraband transitions between the energy levels of charge carriers in injection laser heterostructures with quantum dots and wells
    
    UFN, 169:4 (1999),  459–464