Skuratov Vladimir Alekseevich

Publications in Math-Net.Ru

1. Complexes of intrinsic point defects in silicon formed as a result of high-energy xenon ion implantation and post-implantation annealing
   
   Fizika i Tekhnika Poluprovodnikov, 59:5 (2025),  298–301
2. Luminescent properties of float zone silicon irradiated with swift heavy ions
   
   Fizika i Tekhnika Poluprovodnikov, 53:11 (2019),  1467–1470
3. Structure and properties of Zn-implanted Si near-surface layer modification depending on irradiation fluence of $^{132}$Xe$^{26+}$ ions with energy of 167 MeV
   
   Fizika i Tekhnika Poluprovodnikov, 53:3 (2019),  332–339
4. Irradiation of 4H-SiC UV detectors with heavy ions
   
   Fizika i Tekhnika Poluprovodnikov, 49:4 (2015),  550–556
5. The long-range effect in 6H-SiC under irradiation with Xe ions
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:5 (2015),  47–53
6. Optical and electrical properties of 4H-SiC irradiated with Xe ions
   
   Fizika i Tekhnika Poluprovodnikov, 48:2 (2014),  167–174
7. Orbital quantization in a system of edge Dirac fermions in nanoperforated graphene
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 98:4 (2013),  242–246
8. Influence of irradiation with swift heavy ions on multilayer Si/SiO$_2$ heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 47:3 (2013),  334–339
9. Formation of light-emitting nanostructures in layers of stoichiometric SiO$_2$ irradiated with swift heavy ions
   
   Fizika i Tekhnika Poluprovodnikov, 45:10 (2011),  1363–1368
10. Charge spectroscopy of SiO$_2$ layers with embedded silicon nanocrystals modified by irradiation with high-energy ions
    
    Fizika i Tekhnika Poluprovodnikov, 45:5 (2011),  591–595
11. The effect of composition on the formation of light-emitting Si nanostructures in SiO$_x$ layers on irradiation with swift heavy ions
    
    Fizika i Tekhnika Poluprovodnikov, 45:3 (2011),  419–424
12. Light-emitting Si nanostructures formed in SiO$_2$ on irradiation with swift heavy ions
    
    Fizika i Tekhnika Poluprovodnikov, 44:4 (2010),  544–549
13. Ordered arrays of Si nanocrystals in SiO$_2$: Structural, optical, and electronic properties
    
    Fizika i Tekhnika Poluprovodnikov, 44:4 (2010),  501–506
14. Atom “pinhole camera” with nanometer resolution
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 84:8 (2006),  544–547
15. ANOMALOUS BEHAVIOR OF CURRENT NOISE IN YBACUO MICROBOLOMETERS HIGHER THAN TC
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:8 (1991),  9–13
16. STUDY OF THE EFFECT OF KR-84 AND O-16(2) ION-BEAMS ON NOISE CHARACTERISTICS OF YBACUO MICROBOLOMETERS
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:2 (1991),  9–14
17. Effect of heavy ion ionization and nuclear energy losses on defect formation in $\mathrm{LiF}$ crystals
    
    Fizika Tverdogo Tela, 31:7 (1989),  17–21
18. RADIATION-INDUCED STRENGTHENING OF METALS IRRADIATED BY HEAVY-IONS
    
    Zhurnal Tekhnicheskoi Fiziki, 59:5 (1989),  107–111
19. Исследование методом аннигиляции позитронов дефектов в монокристаллах кремния, облученных ионами ксенона
    
    Fizika i Tekhnika Poluprovodnikov, 23:2 (1989),  328–331
20. EFFECT OF BOMBARDMENT WITH HIGH-ENERGY HEAVY-IONS ON OPTICAL-PROPERTIES AND DEFECTS IN MONOCRYSTALS OF ZINC-OXIDE
    
    Zhurnal Tekhnicheskoi Fiziki, 57:2 (1987),  306–310
21. Defect Formation in Artificial Diamond under High-Energy Ion Implantation
    
    Fizika i Tekhnika Poluprovodnikov, 21:6 (1987),  1095–1100
22. EFFECT OF HIGH-ENERGY ION IRRADIATION ON ALUMINUM CREEP
    
    Zhurnal Tekhnicheskoi Fiziki, 53:9 (1983),  1804–1808