Nenashev Alexey Vladimirovich

Publications in Math-Net.Ru

1. Enhancement of the luminescence response of subwavelength lattices of Si disks with embedded GeSi quantum dots when switching from a simple lattice to a lattice with a basis
   
   Fizika i Tekhnika Poluprovodnikov, 59:10 (2025),  614–619
2. Electron spin resonance in heterostructures with ring molecules of GeSi quantum dots
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 113:1 (2021),  58–62
3. Formation of InAs/GaP heterostructures with quantum wells on silicon substrates by molecular beam epitaxy
   
   Fizika i Tekhnika Poluprovodnikov, 55:2 (2021),  139–146
4. Luminescence of spatially ordered self-assembled solitary Ge(Si) nanoislands and their groups incorporated into photonic crystals
   
   Fizika i Tekhnika Poluprovodnikov, 54:8 (2020),  708–715
5. Analytical expression for the distribution of elastic strain created by a polyhedral inclusion with arbitrary eigenstrain
   
   Fizika Tverdogo Tela, 60:9 (2018),  1761–1766
6. Nucleation of three-dimensional Ge islands on a patterned Si(100) surface
   
   Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1346–1350
7. Hall effect in hopping conduction in an ensemble of quantum dots
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 106:5 (2017),  288–292
8. Photoluminescence enhancement in double Ge/Si quantum dot structures
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 104:12 (2016),  845–848
9. Temperature-stimulated transition from a macroscopic to a mesoscopic behavior of the hopping conductivity in a quantum-dot ensemble
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 102:5 (2015),  344–347
10. Unusual narrowing of the ESR line width in ordered structures with linear chains of Ge/Si quantum dots
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 102:2 (2015),  120–124
11. Linear chains of Ge/Si quantum dots grown on a prepatterned surface formed by ion irradiation
    
    Fizika i Tekhnika Poluprovodnikov, 49:6 (2015),  767–771
12. Structures with vertically stacked Ge/Si quantum dots for logical operations
    
    Fizika i Tekhnika Poluprovodnikov, 46:7 (2012),  960–965
13. Problem of optimal control in the system of semiconductor quantum points
    
    Avtomat. i Telemekh., 2011, no. 6,  108–114
14. Trapping of charge carriers into InAs/AlAs quantum dots at liquid-helium temperature
    
    Fizika i Tekhnika Poluprovodnikov, 45:2 (2011),  183–191
15. The numerical technique of optimization of two-dimensional controlled voltage impulse in the quantum dots system
    
    Program Systems: Theory and Applications, 2:1 (2011),  27–38
16. Hole states in artificial molecules formed by vertically coupled Ge/Si quantum dots
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 85:9 (2007),  527–532
17. Binding of electron states in multilayer strained Ge/Si heterostructures with type-II quantum dots
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 83:4 (2006),  189–194
18. Hole spin relaxation in Ge quantum dots
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 82:5 (2005),  336–340
19. Hopping photoconduction and its long-time kinetics in a heterosystem with Ge quantum dots in Si
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 78:9 (2003),  1077–1081
20. Many-electron Coulomb correlations in hopping transport along layers of quantum dots
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 78:4 (2003),  276–280


21. Новосибирский государственный университет
    
    Kvant, 2025, no. 8,  50–53
22. Новосибирский государственный университет. Физика
    
    Kvant, 2024, no. 10,  43–45
23. Новосибирский государственные университет
    
    Kvant, 2023, no. 10,  52–58
24. Новосибирский государственный университет
    
    Kvant, 2022, no. 8,  48–54
25. Новосибирский государственный университет
    
    Kvant, 2021, no. 11-12,  37–41
26. Новосибирский государственный университет
    
    Kvant, 2020, no. 10,  46–53
27. Новосибирский государственный университет
    
    Kvant, 2019, no. 11,  41–51
28. Новосибирский государственный университет
    
    Kvant, 2018, no. 10,  43–50
29. Новосибирский государственный университет
    
    Kvant, 2017, no. 10,  46–51