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Egorov Anton Yur'evich

Publications in Math-Net.Ru

  1. Influence of the morphology of InP substrates on interface roughness and defect density of quantum-cascade laser heterostructures

    Fizika i Tekhnika Poluprovodnikov, 59:7 (2025),  439–444
  2. Single-mode quantum-cascade lasers with variable etching depth of grating slits

    Fizika i Tekhnika Poluprovodnikov, 59:1 (2025),  23–28
  3. Tuning the radiation frequency of a mid-IR quantum cascade laser

    Fizika i Tekhnika Poluprovodnikov, 59:1 (2025),  13–15
  4. Tunable quantum cascade laser for methane concentration measurement

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:22 (2025),  66–70
  5. Surface lasing in micropillar cavity lasers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:21 (2025),  58–62
  6. Single-mode lasing on radial modes in ring cavity quantum-cascade lasers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:11 (2025),  52–56
  7. Bimodal whispering-gallery mode lasing in micropillar cavity lasers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:5 (2025),  41–44
  8. The effect of the pump pulse duration and duty cycle on the power characteristics of quantum cascade lasers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:4 (2025),  54–58
  9. The influence of the chemical composition of the surrounding layers on the optical properties of InGaP(As) quantum dots

    Fizika i Tekhnika Poluprovodnikov, 58:10 (2024),  529–532
  10. Study of the structural and optical properties of InGaAs quantum dots

    Fizika i Tekhnika Poluprovodnikov, 58:6 (2024),  318–325
  11. High-power tunable quantum-cascade laser

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:22 (2024),  65–68
  12. Quantum-cascade lasers based on an active region with low sensitivity to thickness fluctuations

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:16 (2024),  18–21
  13. Tuning the emission frequency of U-shaped mid-infrared quantum cascade lasers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:5 (2024),  23–27
  14. InGaAs/AlInAs/InP quantum-cascade lasers with reflective and antireflective optical coatings

    Kvantovaya Elektronika, 54:2 (2024),  100–103
  15. Epitaxial growth of highly stressed InGaAs/InAlAs layers on InP substrates by molecular-beam epitaxy

    Zhurnal Tekhnicheskoi Fiziki, 93:8 (2023),  1166–1172
  16. Linewidth study of MBE-grown wafer-fused single-mode 1.55 $\mu$m VCSELs

    Optics and Spectroscopy, 131:11 (2023),  1486–1489
  17. Emission linewidth and $\alpha$-factor of 1.55 $\mu$m-range vertical-cavity surface-emitting lasers based on InGaAs/InGaAlAs quantum wells

    Optics and Spectroscopy, 131:8 (2023),  1095–1100
  18. Simulation of the energy-band structure of superlattice of quaternary alloys of diluted nitrides

    Fizika i Tekhnika Poluprovodnikov, 57:3 (2023),  207–214
  19. Generation of random sequences by switching transverse modes in a quantum cascade laser

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:22 (2023),  35–38
  20. Metal–dielectric mirror coatings for 4–5-μm quantum-cascade lasers

    Kvantovaya Elektronika, 53:8 (2023),  641–644
  21. Dielectric highly reflective mirror coatings for quantum cascade lasers with 4 – 5 μm emission wavelength

    Kvantovaya Elektronika, 53:5 (2023),  370–373
  22. Study of active regions based on multiperiod GaAsN/InAs superlattice

    Fizika i Tekhnika Poluprovodnikov, 56:10 (2022),  1002–1010
  23. The influence of the waveguide layer composition on the emission parameters of 1550 nm InGaAs/InP laser heterostructures

    Fizika i Tekhnika Poluprovodnikov, 56:9 (2022),  933–939
  24. Surface-emitting quantum-cascade lasers with a grating formed by focused ion beam milling

    Fizika i Tekhnika Poluprovodnikov, 56:9 (2022),  908–914
  25. 1550 nm range high-speed single-mode vertical-cavity surface-emitting lasers

    Fizika i Tekhnika Poluprovodnikov, 56:8 (2022),  814–823
  26. Study of the spatial characteristics of emission of surface-emitting ring quantum-cascade lasers

    Fizika i Tekhnika Poluprovodnikov, 56:6 (2022),  601–606
  27. Heterostructure of a 2.5 THz range quantum-cascade detector

    Fizika i Tekhnika Poluprovodnikov, 56:3 (2022),  357–362
  28. Features of single-mode emission in 7.5–8.0 $\mu$m range quantum-cascade lasers with a short cavity length

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:5 (2022),  7–10
  29. High-speed vertically emitting lasers in the spectral range of 1550 nm, implemented in the framework of wafer sintering method

    Kvantovaya Elektronika, 52:10 (2022),  878–884
  30. Investigation of the characteristics of the InGaAs/InAlGaAs superlattice for 1300 nm range vertical-cavity surface emitting lasers

    Zhurnal Tekhnicheskoi Fiziki, 91:12 (2021),  2008–2017
  31. Optical properties of three-dimensional InGaP(As) islands formed by substitution of fifth-group elements

    Optics and Spectroscopy, 129:2 (2021),  218–222
  32. Quantum-cascade laser with radiation output through a textured layer

    Fizika i Tekhnika Poluprovodnikov, 55:11 (2021),  1081–1085
  33. Surface emitting quantum-cascade ring laser

    Fizika i Tekhnika Poluprovodnikov, 55:7 (2021),  602–606
  34. Heterostructures of quantum-cascade lasers with nonselective overgrowth by metalorganic vapour phase epitaxy

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:24 (2021),  46–50
  35. Analysis of internal optical loss of 1.3 $\mu$m vertical-cavity surface-emitting laser based on $n^{+}$-InGaAs/$p^{+}$-InGaAs/$p^{+}$-InAlGaAs tunnel junction

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:23 (2021),  3–7
  36. Impact of transverse optical confinment on performance of 1.55 $\mu$m vertical-cavity surface-emitting lasers with a buried tunnel junction

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:22 (2021),  3–8
  37. Studying the optical and structural properties of three-dimensional InGaP(As) islands formed by substitution of elements of the fifth group

    Zhurnal Tekhnicheskoi Fiziki, 90:12 (2020),  2139–2142
  38. Spectral dynamics of quantum cascade lasers generating frequency combs in the long-wavelength infrared range

    Zhurnal Tekhnicheskoi Fiziki, 90:8 (2020),  1333–1336
  39. Spectral characteristics of half-ring quantum-cascade lasers

    Optics and Spectroscopy, 128:8 (2020),  1165–1170
  40. Study of the spectra of arched-cavity quantum-cascade lasers

    Optics and Spectroscopy, 128:6 (2020),  696–700
  41. 1.55 $\mu$m-range vertical cavity surface emitting lasers, manufactured by wafer fusion of heterostuctures grown by solid-source molecular beam epitaxy

    Fizika i Tekhnika Poluprovodnikov, 54:10 (2020),  1088–1096
  42. A study of the photoresponse in graphene produced by chemical vapor deposition

    Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  833–840
  43. The effect of a saturable absorber in long-wavelength vertical-cavity surface-emitting lasers fabricated by wafer fusion technology

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:24 (2020),  49–54
  44. A study of the spatial-emission characteristics of quantum-cascade lasers for the 8-$\mu$m spectral range

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:22 (2020),  51–54
  45. The influence of the parameters of a short-period InGaAs/InGaAlAs superlattice on photoluminescence efficiency

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:22 (2020),  27–30
  46. A vertical-cavity surface-emitting laser for the 1.55-$\mu$m spectral range with tunnel junction based on $n^{++}$-InGaAs/$p^{++}$-InGaAs/$p^{++}$-InAlGaAs layers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:17 (2020),  21–25
  47. Heterostructures of quantum-cascade laser for the spectral range of 4.6 $\mu$m for obtaining a continuous-wave lasing mode

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:9 (2020),  35–38
  48. Quantum-cascade lasers with a distributed Bragg reflector formed by ion-beam etching

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:7 (2020),  8–11
  49. Development and study of high-power quantum-cascade lasers emitting at 4.5 – 4.6 μm

    Kvantovaya Elektronika, 50:11 (2020),  989–994
  50. 10-W 4.6-μm quantum cascade lasers

    Kvantovaya Elektronika, 50:8 (2020),  720–721
  51. High-power (>1 W) room-temperature quantum-cascade lasers for the long-wavelength IR region

    Kvantovaya Elektronika, 50:2 (2020),  141–142
  52. Optical gain in laser heterostructures with an active area based on an InGaAs/InGaAlAs superlattice

    Optics and Spectroscopy, 127:6 (2019),  963–966
  53. Lasing of a quantum-cascade laser with a thin upper cladding

    Optics and Spectroscopy, 127:2 (2019),  278–282
  54. Analysis of the internal optical losses of the vertical-cavity surface-emitting laser of the spectral range of 1.55 $\mu$m formed by a plate sintering technique

    Optics and Spectroscopy, 127:1 (2019),  145–149
  55. Influence of output optical losses on the dynamic characteristics of 1.55-$\mu$m wafer-fused vertical-cavity surface-emitting lasers

    Fizika i Tekhnika Poluprovodnikov, 53:8 (2019),  1128–1134
  56. Spontaneous emission and lasing of a two-wavelength quantum-cascade laser

    Fizika i Tekhnika Poluprovodnikov, 53:3 (2019),  365–369
  57. Spectral shift of quantum-cascade laser emission under the action of control voltage

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:22 (2019),  21–23
  58. Generation of frequency combs by quantum cascade lasers emitting in the 8-$\mu$m wavelength range

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:20 (2019),  18–21
  59. High-power quantum-cascade lasers emitting in the 8-$\mu$m wavelength range

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:14 (2019),  48–51
  60. Temperature dependence of characteristics of diode lasers with narrow quantum wells of the 1.55 $\mu$m spectral range based on phosphorous-free heterostructures

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:11 (2019),  20–23
  61. Room temperature lasing of single-mode arched-cavity quantum-cascade lasers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:8 (2019),  31–33
  62. Tunable single-frequency source based on a DFB laser array for the spectral region of 1.55 μm

    Kvantovaya Elektronika, 49:12 (2019),  1158–1162
  63. High-coupling distributed feedback lasers for the 1.55 μm spectral region

    Kvantovaya Elektronika, 49:9 (2019),  801–803
  64. Vertical-cavity surface-emitting lasers with intracavity contacts and a rhomboidal current aperture for compact atomic clocks

    Kvantovaya Elektronika, 49:2 (2019),  187–190
  65. High temperature laser generation of quantum-cascade lasers in the spectral region of 8 $\mu$m

    Fizika Tverdogo Tela, 60:11 (2018),  2251–2254
  66. Turn-on dynamics of quantum cascade lasers with a wavelength of 8100 nm at room temperature

    Zhurnal Tekhnicheskoi Fiziki, 88:11 (2018),  1708–1710
  67. Lasing in 9.6-$\mu$m quantum cascade lasers

    Zhurnal Tekhnicheskoi Fiziki, 88:10 (2018),  1559–1563
  68. Dual-frequency generation in quantum cascade lasers of the 8-$\mu$m spectral range

    Optics and Spectroscopy, 125:3 (2018),  387–390
  69. On the impact of barrier-layer doping on the photoluminescence efficiency of InGaAlAs/InGaAs/InP strained-layer heterostructures

    Fizika i Tekhnika Poluprovodnikov, 52:9 (2018),  1034–1037
  70. Room temperature lasing of multi-stage quantum-cascade lasers at 8 $\mu$m wavelength

    Fizika i Tekhnika Poluprovodnikov, 52:8 (2018),  954–957
  71. Experimental study of spontaneous emission in Bragg multiple- quantum-well structures with InAs single-layer quantum wells

    Fizika i Tekhnika Poluprovodnikov, 52:7 (2018),  736–740
  72. Heterostructures of single-wavelength and dual-wavelength quantum-cascade lasers

    Fizika i Tekhnika Poluprovodnikov, 52:6 (2018),  597–602
  73. Mode-locked lasers with “thin” quantum wells in 1.55 $\mu$m spectral range

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:4 (2018),  95–102
  74. Vertical-cavity surface-emitting 1.55-$\mu$m lasers fabricated by fusion

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:1 (2018),  59–66
  75. Optical properties of metamorphic hybrid heterostuctures for vertical-cavity surface-emitting lasers operating in the 1300-nm spectral range

    Fizika i Tekhnika Poluprovodnikov, 51:9 (2017),  1176–1181
  76. Study of the structural and optical properties of GaP(N) layers synthesized by molecular-beam epitaxy on Si(100) 4$^\circ$ substrates

    Fizika i Tekhnika Poluprovodnikov, 51:2 (2017),  276–280
  77. Heterostructures for quantum-cascade lasers of the wavelength range of 7–8 $\mu$m

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:14 (2017),  64–71
  78. On the gain properties of “thin” elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm

    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1429–1433
  79. Room-temperature operation of quantum cascade lasers at a wavelength of 5.8 $\mu$m

    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1320–1324
  80. Optical properties of InGaAs/InGaAlAs quantum wells for the 1520–1580 nm spectral range

    Fizika i Tekhnika Poluprovodnikov, 50:9 (2016),  1208–1212
  81. Optical properties of photodetectors based on single GaN nanowires with a transparent graphene contact

    Fizika i Tekhnika Poluprovodnikov, 50:8 (2016),  1118–1122
  82. Switching between the mode-locking and Q-switching modes in two-section QW lasers upon a change in the absorber properties due to the Stark effect

    Fizika i Tekhnika Poluprovodnikov, 50:6 (2016),  843–847
  83. GaAs/InGaAsN heterostructures for multi-junction solar cells

    Fizika i Tekhnika Poluprovodnikov, 50:5 (2016),  663–667
  84. Optical properties of metamorphic GaAs/InAlGaAs/InGaAs heterostructures with InAs/InGaAs quantum wells, emitting light in the 1250–1400-nm spectral range

    Fizika i Tekhnika Poluprovodnikov, 50:5 (2016),  624–627
  85. The influence of an In$_{0.52}$Al$_{0.48}$As transition layer design on the transport characteristics of a metamorphic high-electron-mobility transistor

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:6 (2016),  14–19
  86. Lasing of multiperiod quantum-cascade lasers in the spectral range of (5.6–5.8)-$\mu$m under current pumping

    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1574–1577
  87. Design concepts of monolithic metamorphic vertical-cavity surface-emitting lasers for the 1300–1550 nm spectral range

    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1569–1573
  88. Metamorphic distributed Bragg reflectors for the 1440–1600 nm spectral range: Epitaxy, formation, and regrowth of mesa structures

    Fizika i Tekhnika Poluprovodnikov, 49:10 (2015),  1434–1438
  89. MBE growth of GaP on a Si substrate

    Fizika i Tekhnika Poluprovodnikov, 49:4 (2015),  569–572
  90. Admittance spectroscopy of solar cells based on GaPNAs layers

    Fizika i Tekhnika Poluprovodnikov, 49:4 (2015),  534–538
  91. Photoluminescence of heterostructures with GaP$_{1-x}$N$_x$ and GaP$_{1-x-y}$N$_x$As$_y$ layers grown on GaP and Si substrates by molecular-beam epitaxy

    Fizika i Tekhnika Poluprovodnikov, 49:4 (2015),  489–493
  92. Control over the morphology of AlN during molecular beam epitaxy with the plasma activation of nitrogen on Si (111) substrates

    Fizika i Tekhnika Poluprovodnikov, 49:2 (2015),  283–286
  93. Power increase in Q-switched two-sectional quantum well lasers due to Stark effect

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:20 (2015),  30–36
  94. Multiperiod quantum-cascade nanoheterostructures: Epitaxy and diagnostics

    Fizika i Tekhnika Poluprovodnikov, 48:12 (2014),  1640–1645
  95. Analysis of thermal emission processes of electrons from arrays of InAs quantum dots in the space charge region of GaAs matrix

    Fizika i Tekhnika Poluprovodnikov, 48:9 (2014),  1186–1191
  96. Evaluation of the quality of GaAs epitaxial layers and their interfaces from analysis of the exciton absorption spectra

    Fizika i Tekhnika Poluprovodnikov, 48:6 (2014),  774–780
  97. Ultra-wide electroluminescence spectrum of LED heterostructures based on GaPAsN semiconductor alloys

    Fizika i Tekhnika Poluprovodnikov, 48:4 (2014),  518–522
  98. Molecular beam epitaxy of GaPN, GaPAsN, and InGaPN nitride solid solutions

    Fizika i Tekhnika Poluprovodnikov, 48:3 (2014),  407–411
  99. Design of multijunction GaPNAs/Si heterostructure solar cells by computer simulation

    Fizika i Tekhnika Poluprovodnikov, 48:3 (2014),  396–401
  100. Influence of optical losses on the dynamic characteristics of linear arrays of near-infrared vertical-cavity surface-emitting lasers

    Fizika i Tekhnika Poluprovodnikov, 47:6 (2013),  833–837
  101. Photoelectric properties of solar cells based on GaPNAs/GaP heterostructures

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:24 (2013),  88–94
  102. Dependence of the hybridization parameter on nitrogen molar fraction in nitrogen-containing GaPN solid solutions

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:24 (2013),  81–87
  103. Optical orientation of nuclei in nitrogen alloys GaAsN at room temperature

    Pis'ma v Zh. Èksper. Teoret. Fiz., 96:9 (2012),  635–640
  104. Resonance reflection of light by a periodic system of excitons in GaAs/AlGaAs quantum wells

    Fizika i Tekhnika Poluprovodnikov, 46:8 (2012),  1039–1042
  105. Electroluminescence of GaP$_x$N$_y$As$_{1-x-y}$ nanoheterostructures through a transparent electrode made of CVD graphene

    Fizika i Tekhnika Poluprovodnikov, 46:6 (2012),  815–819
  106. The effect of barrier width in coupled asymmetric double quantum well structure on passive mode-locking region of existence

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:7 (2012),  31–39
  107. Mutual synchronization of two coupled self-oscillators based on GaAs/AlGaAs superlattices

    Zhurnal Tekhnicheskoi Fiziki, 81:6 (2011),  80–84
  108. Optical properties of quantum-confined heterostructures based on GaP$_x$N$_y$As$_{1-x-y}$ alloys

    Fizika i Tekhnika Poluprovodnikov, 45:9 (2011),  1209–1213
  109. Electrochemical capacitance-voltage profiling of the free-carrier concentration in HEMT heterostructures based on InGaAs/AlGaAs/GaAs compounds

    Fizika i Tekhnika Poluprovodnikov, 45:6 (2011),  829–835
  110. Semiconductor lasers with asymmetric barrier layers: An approach to high temperature stability

    Fizika i Tekhnika Poluprovodnikov, 45:4 (2011),  540–546
  111. Double pulse doped InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor heterostructures

    Fizika i Tekhnika Poluprovodnikov, 44:7 (2010),  950–954
  112. Study of defects in heterostructures with GaPAsN and GaPN quantum wells in the GaP matrix

    Fizika i Tekhnika Poluprovodnikov, 44:7 (2010),  923–927
  113. Optical properties of quaternary GaN$_x$As$_y$P$_{1-x-y}$ semiconductor alloys

    Fizika i Tekhnika Poluprovodnikov, 44:7 (2010),  886–890
  114. Spin-dependent electron dynamics and recombination in GaAs$_{1-x}$N$_x$ alloys at room temperature

    Pis'ma v Zh. Èksper. Teoret. Fiz., 85:3 (2007),  208–212
  115. Spin-dependent recombination in GaAsN solid solutions

    Pis'ma v Zh. Èksper. Teoret. Fiz., 82:7 (2005),  509–512
  116. Strained-submonolayer and quantum-dot superstructures

    UFN, 165:2 (1995),  224–225
  117. Growth of GaAs-AlAs quantum clusters on faceted GaAs surface oriented not aling to (100) by the method of molecular-beam epitaxy

    Fizika i Tekhnika Poluprovodnikov, 26:10 (1992),  1715–1722

  118. Quantum cascade lasers for the 8-$\mu$m spectral range: technology, design, and analysis

    UFN, 194:1 (2024),  98–105

© Steklov Math. Inst. of RAS, 2026