Poloskin Dmitry Sergeyevich

Publications in Math-Net.Ru

1. Photoluminescence related to dislocations in silicon plastically deformed under bending mode of central symmetry
   
   Fizika Tverdogo Tela, 67:5 (2025),  810–816
2. Boron-doped silicon: a possible way of testing and refining models of non-ionizing energy loss under electron- and proton irradiation
   
   Fizika Tverdogo Tela, 64:12 (2022),  1915
3. Vacancy-phosphorus complexes in electron-irradiated floating-zone $n$-type silicon: new points in annealing studies
   
   Fizika i Tekhnika Poluprovodnikov, 54:1 (2020),  45
4. Interaction rates of group-III and group-V impurities with intrinsic point defects in irradiated Si and Ge
   
   Fizika i Tekhnika Poluprovodnikov, 52:13 (2018),  1578
5. Dynamics of changes in the photoluminescence of porous silicon after gamma irradiation
   
   Fizika i Tekhnika Poluprovodnikov, 52:8 (2018),  921–925
6. Diversity of properties of device structures based on group-III nitrides, related to modification of the fractal-percolation system
   
   Fizika i Tekhnika Poluprovodnikov, 52:7 (2018),  804–811
7. Analysis of integrated thyristor switching-off by a reverse gate pulse current
   
   Zhurnal Tekhnicheskoi Fiziki, 87:11 (2017),  1682–1686
8. Radiation-produced defects in germanium: experimental data and models of defects
   
   Fizika i Tekhnika Poluprovodnikov, 51:12 (2017),  1632–1646
9. Some challenging points in the identification of defects in floating-zone $n$-type silicon irradiated with 8 and 15 Mev protons
   
   Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1313–1319
10. Specific features of proton interaction with transistor structures having a 2D AlGaN/GaN channel
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:21 (2016),  39–46
11. Electrically active centers formed in silicon during the high-temperature diffusion of boron and aluminum
    
    Fizika i Tekhnika Poluprovodnikov, 47:2 (2013),  255–257
12. Suppression of the virtual anderson transition in the impurity band of doped quantum well structures
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 94:2 (2011),  120–124
13. Mixed conduction in doped semiconductor structures related to quasi-metallic conduction in the impurity band
    
    Fizika i Tekhnika Poluprovodnikov, 44:4 (2010),  491–496
14. Virtual Anderson transition in a narrow impurity band of doped $p$-GaAs/AlGaAs layers
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 85:3 (2007),  202–207
15. Transition from strong to weak localization in the split-off impurity band in two-dimensional p-GaAs/AlGaAs structures
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 80:1 (2004),  36–40
16. Spin-dependent negative photo-conductivity in silicon
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:9 (1985),  568–573