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Publications in Math-Net.Ru
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Magnetic field characterization of physical properties of two-dimensional electron gas of nitride high electron mobility transistor heterostructures
Fizika i Tekhnika Poluprovodnikov, 59:2 (2025), 91–96
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Anomalous hall effect in Mn $\delta$-doped GaAs/In$_{0.17}$Ga$_{0.83}$As/GaAs quantum wells with high hole mobility
Pis'ma v Zh. Èksper. Teoret. Fiz., 85:1 (2007), 32–39
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Переход металл$-$диэлектрик в бесщелевых полупроводниках
$p$-Hg$_{1-x}$Cd$_{x}$Te с ${x\approx0.15}$
Fizika i Tekhnika Poluprovodnikov, 23:4 (1989), 715–717
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Влияние примесных дырок на диэлектрическую проницаемость бесщелевых
полупроводников
Fizika i Tekhnika Poluprovodnikov, 22:5 (1988), 893–896
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Relaxation of Hot-Electron Energy in $p$-Hg$_{1-x$Cd$_{x}$Te}
and $p$-Hg$_{1-x$Mn$_{x}$Te} Gapless Semiconductors
at Helium Temperatures
Fizika i Tekhnika Poluprovodnikov, 21:5 (1987), 855–861
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Metal–Dielectric Transition in Hg$_{0.8}$Cd$_{0.2}$Te Induced by a Magnetic Field
Fizika i Tekhnika Poluprovodnikov, 21:5 (1987), 792–797
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Anomalous Anisotropy of Gapless $p$-Type HgMnTe Magnetoresistance
Fizika i Tekhnika Poluprovodnikov, 20:11 (1986), 1970–1979
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Static Permittivity of Hg$_{1-x}$Cd$_x$Te Gapless Semiconductors
Fizika i Tekhnika Poluprovodnikov, 20:3 (1986), 462–467
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Photoconduction of Warm Electrons in Hg$_{1-x}$Cd$_{x}$Te Gapless Semiconductors
Fizika i Tekhnika Poluprovodnikov, 18:7 (1984), 1185–1190
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Локализация электронов в магнитном поле
в $n$-Hg$_{0.8}$Cd$_{0.2}$Te
Fizika i Tekhnika Poluprovodnikov, 17:8 (1983), 1392–1396
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Влияние донорно-акцепторных пар на подвижность электронов
в бесщелевых полупроводниках Hg$_{1-x}$Cd$_{x}$Te
Fizika i Tekhnika Poluprovodnikov, 17:1 (1983), 24–26
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