Filatov Dmitrii Olegovich

Publications in Math-Net.Ru

1. In situ investigation of filament growth in yttria stabilized zirconia films by contact capacitance atomic force microscopy
   
   Fizika Tverdogo Tela, 67:8 (2025),  1441–1445
2. Influence of oxygen vacancy concentration on the resistive switching parameters of ZrO$_2$(Y)-based memristor structures
   
   Zhurnal Tekhnicheskoi Fiziki, 95:9 (2025),  1733–1743
3. Memristors for non-volatile resistive memory based on an Al$_2$O$_3$/ZrO$_2$(Y) dielectric bilayer
   
   Zhurnal Tekhnicheskoi Fiziki, 94:11 (2024),  1833–1842
4. Formation of Au nanoparticles in SiO$_2$–TiO$_2$ films by local electrochemical reduction using an atomic force microscope probe
   
   University proceedings. Volga region. Physical and mathematical sciences, 2023, no. 3,  116–126
5. The effect of temperature on dissipative electron tunneling through co nanoparticles in HfO$_2$ films
   
   University proceedings. Volga region. Physical and mathematical sciences, 2023, no. 2,  108–121
6. Resistive switching of memristors base on epitaxial structures $p$-Si/$p$-Ge/$n^+$-Si(001) with Ru and Ag electrodes
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:1 (2023),  5–8
7. Scanning Kelvin Probe Microscopy investigation of optically induced charge in Au nanoparticles embedded into ZrO$_2$(Y) films
   
   Zhurnal Tekhnicheskoi Fiziki, 92:12 (2022),  1937–1942
8. Effect of substrate misorientation on the properties of $p$-HEMT GaAs-based nanoheterostructures formed during MOCVD epitaxy
   
   Zhurnal Tekhnicheskoi Fiziki, 92:10 (2022),  1582–1587
9. Features of tunneling current-voltage characteristics in dielectric films with Ni, Fe and Co nanoparticles, investigated by conductive AFM and within the framework of the theory of 1D-dissipative tunneling
   
   Nanosystems: Physics, Chemistry, Mathematics, 13:6 (2022),  621–627
10. Investigation of the effect of optical radiation on resistive switching of MIS-structures based on ZrO$_2$(Y) on Si(001) substrates with Ge nanoislands
    
    Fizika i Tekhnika Poluprovodnikov, 56:8 (2022),  723–727
11. Resistive switching in individual ferromagnetic filaments in ZrO$_{2}$(Y)/Ni based memristive stacks
    
    Zhurnal Tekhnicheskoi Fiziki, 91:10 (2021),  1474–1478
12. Dissipative electron tunneling in vertically coupled asymmetric double InAs/GaAs(001) quantum dots
    
    Zhurnal Tekhnicheskoi Fiziki, 91:10 (2021),  1431–1440
13. Effect of optical illumination on resistive switching in MOS stacks based on ZrO$_2$(Y) films with Au nanoparticles
    
    Fizika i Tekhnika Poluprovodnikov, 55:9 (2021),  754–757
14. Demonstration of resistive switching effect in separate filaments in Ag/Ge/Si memristor structures by conductive atomic force microscopy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:15 (2021),  23–26
15. The formation of nanosized ferromagnetic Ni filaments in films of ZrO$_2$(Y)
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:11 (2021),  30–32
16. Resistive switching of memristors based on stabilized zirconia by complex signals
    
    Fizika Tverdogo Tela, 62:4 (2020),  556–561
17. An atomic force microscopic study of resistive switching resonance activation in ZrO$_{2}$(Y) films
    
    Zhurnal Tekhnicheskoi Fiziki, 90:11 (2020),  1825–1829
18. Features of two-dimensional bifurcations during dissipative electron tunneling in arrays of Au nanoparticles
    
    Zhurnal Tekhnicheskoi Fiziki, 90:11 (2020),  1797–1805
19. Resistive switching in metal–oxide–semiconductor structures with GeSi nanoislands on a silicon substrate
    
    Zhurnal Tekhnicheskoi Fiziki, 90:10 (2020),  1741–1749
20. Atomic force microscopy examination of elementary processes in metalorganic compound hydride epitaxy of GaAs-based nanoheterostructures
    
    Zhurnal Tekhnicheskoi Fiziki, 90:5 (2020),  826–830
21. Resistive switching in memristors based on Ag/Ge/Si heterostructures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:2 (2020),  44–46
22. Atomic-force microscopy of resistive nonstationary signal switching in ZrO$_{2}$(Y) films
    
    Zhurnal Tekhnicheskoi Fiziki, 89:11 (2019),  1669–1673
23. Enhanced photoluminescence of heavily doped $n$-Ge/Si(001) layers
    
    Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1293–1296
24. Tunnel diodes based on $n^{+}$-Ge/$p^{+}$-Si(001) epitaxial structures grown by the hot-wire chemical vapor deposition
    
    Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1267–1270
25. Influence of the rotation frequency of a disk substrate holder on the crystal structure characteristics of MOCVD-grown GaAs layers
    
    Zhurnal Tekhnicheskoi Fiziki, 88:2 (2018),  219–223
26. A comparative analysis of the observed effects of 2d tunneling bifurcations for quasi-one-dimensional and quasi-two-dimensional au-qd systems in an external electric field
    
    Nanosystems: Physics, Chemistry, Mathematics, 9:6 (2018),  724–734
27. Study of CsPbBr$_{3}$ nanocrystals and their agglomerates by combined scanning probe microscopy and optical spectrometry
    
    Optics and Spectroscopy, 125:6 (2018),  752–757
28. Effect of pulsed gamma-neutron irradiation on the photosensitivity of Si-based photodiodes with GeSi nanoislands and Ge epitaxial layers
    
    Fizika i Tekhnika Poluprovodnikov, 52:6 (2018),  651–655
29. Ballistic hole emission spectroscopy of self-assembled GeSi/Si(001) nanoislands
    
    Fizika i Tekhnika Poluprovodnikov, 52:5 (2018),  505
30. Plasmon resonance induced photoconductivity in the yttria stabilized zirconia films with embedded Au nanoclusters
    
    Fizika i Tekhnika Poluprovodnikov, 52:4 (2018),  470
31. Features of switching memristor structures to a high-resistance state by sawtooth pulses
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:24 (2018),  88–93
32. Investigation of spatial distribution of photocurrent in the plane of a Si $p$–$n$ photodiode with GeSi nanoislands by scanning near-field optical microscopy
    
    Fizika i Tekhnika Poluprovodnikov, 51:4 (2017),  563–568
33. Phonon assisted resonant tunneling and its phonons control
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 104:6 (2016),  406–412
34. Conditions of growth of high-quality relaxed Si$_{1-x}$Ge$_{x}$ layers with a high Ge content by the vapor-phase decomposition of monogermane on a sublimating Si hot wire
    
    Fizika i Tekhnika Poluprovodnikov, 50:9 (2016),  1270–1275
35. A random telegraph signal in tunneling silicon $p$–$n$ junctions with GeSi nanoislands
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:8 (2016),  94–101
36. Forming dense arrays of gold nanoparticles in thin films of yttria stabilized zirconia by magnetron sputtering
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:1 (2016),  72–79
37. Ionic tunneling conductivity mechanism for growing colloidal gold quantum dots
    
    University proceedings. Volga region. Physical and mathematical sciences, 2015, no. 3,  163–176
38. Photodetectors on the basis of Ge/Si(001) heterostructures grown by the hot-wire CVD technique
    
    Fizika i Tekhnika Poluprovodnikov, 49:10 (2015),  1411–1414
39. Photodiodes based on self-assembled GeSi/Si(001) nanoisland arrays grown by the combined sublimation molecular-beam epitaxy of silicon and vapor-phase epitaxy of germanium
    
    Fizika i Tekhnika Poluprovodnikov, 49:3 (2015),  399–405
40. Influence of the spatial arrangement of the Si $\delta$ layer on the optoelectronic properties of InGaAs/GaAs quantum-well nanoheterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 49:2 (2015),  145–148
41. Formation of Au$_4$Zr nanocrystals in yttria stabilized zirconia in the course of implantation of gold ions
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:11 (2015),  62–70
42. Influence of the wideband matrix promote phonon modes on tunnel cvc of semiconductor quantum dots
    
    University proceedings. Volga region. Physical and mathematical sciences, 2014, no. 2,  132–150
43. Emission of photoexcited charge carriers from InAs/GaAs quantum dots grown by gas-phase epitaxy
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 100:3 (2014),  175–180
44. Simulation of electro-optical processes in the diode, based on $N^+-SI/N-SI:ER/P^+-SI$ structure under the reverse bias and ways to improve the reliability of modeling agencies
    
    Meždunar. nauč.-issled. žurn., 2013, no. 1(8),  11–14
45. Investigation of energy levels of Er-impurity centers in Si by the method of ballistic electron emission spectroscopy
    
    Fizika i Tekhnika Poluprovodnikov, 45:9 (2011),  1153–1158
46. Investigation of the local density of states in self-assembled GeSi/Si(001) nanoislands by combined scanning tunneling and atomic-force microscopy
    
    Fizika i Tekhnika Poluprovodnikov, 45:3 (2011),  414–418
47. On the nature of electroluminescence at 1.5 $\mu$m in the breakdown mode of reverse-biased Er-doped silicon $p$–$n$-junction structures grown by sublimation molecular beam epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 45:1 (2011),  87–92
48. The morphology, electron structure, and optical properties of self-assembled silicon nanostructures on the surface of highly oriented pyrolytic graphite
    
    Fizika i Tekhnika Poluprovodnikov, 45:1 (2011),  57–61
49. Confocal Raman microscopy of self-assembled GeSi/Si(001) Islands
    
    Fizika i Tekhnika Poluprovodnikov, 44:11 (2010),  1552–1558
50. Nanoporous titania films produced by pulsed interference lithography
    
    Kvantovaya Elektronika, 40:10 (2010),  925–927
51. Features of two-dimensional tunnel bifurcations under conditions of an external electric field
    
    University proceedings. Volga region. Physical and mathematical sciences, 2009, no. 2,  123–135
52. Anomalous ferromagnetic resonance in manganese- and aluminum-doped germanium layers deposited from the laser plasma
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 90:12 (2009),  852–855