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Yassievich Irina Nikolaevna

Publications in Math-Net.Ru

  1. Modification of ge structural-morphological properties in multi-layered nanoperiodic Al$_{2}$O$_{3}$/Ge structure with intermediate Si layers

    Fizika i Tekhnika Poluprovodnikov, 55:10 (2021),  882–889
  2. Ge/Si core/shell quantum dots in an alumina matrix: influence of the annealing temperature on the optical properties

    Fizika i Tekhnika Poluprovodnikov, 54:2 (2020),  129–137
  3. Simulation of electron and hole states in Si nanocrystals in a SiO$_{2}$ matrix: choice of parameters of the empirical tight-binding method

    Fizika i Tekhnika Poluprovodnikov, 52:10 (2018),  1145–1149
  4. Tight-binding simulation of silicon and germanium nanocrystals

    Fizika i Tekhnika Poluprovodnikov, 51:10 (2017),  1325–1340
  5. Lifetime of excitons localized in Si nanocrystals in amorphous silicon

    Fizika i Tekhnika Poluprovodnikov, 50:5 (2016),  639–642
  6. Role of surface self-trapped excitons in the energy relaxation of photoexcited silicon nanocrystals

    Fizika i Tekhnika Poluprovodnikov, 49:4 (2015),  503–508
  7. Trions in silicon nanocrystals in an amorphous hydrogenated silicon matrix

    Fizika i Tekhnika Poluprovodnikov, 48:2 (2014),  249–252
  8. Radiative and nonradiative recombination of self-trapped exciton on silicon nanocrystal interface

    Pis'ma v Zh. Èksper. Teoret. Fiz., 97:2 (2013),  93–97
  9. Light emission from silicon nanocrystals

    Fizika i Tekhnika Poluprovodnikov, 47:2 (2013),  147–167
  10. Energy transfer between silicon nanocrystals

    Pis'ma v Zh. Èksper. Teoret. Fiz., 93:3 (2011),  162–165
  11. Impact of resonance-state scattering on the kinetics of two-dimensional electrons

    Fizika i Tekhnika Poluprovodnikov, 44:2 (2010),  210–217
  12. Direct bandgap optical transitions in Si nanocrystals

    Pis'ma v Zh. Èksper. Teoret. Fiz., 90:12 (2009),  856–860
  13. Electron-phonon interaction in non-polar quantum dots induced by the amorphous polar environment

    Pis'ma v Zh. Èksper. Teoret. Fiz., 90:10 (2009),  756–760
  14. Linearly polarized terahertz radiation in uniaxially deformed Ge(Ga) upon the electric breakdown of an impurity

    Pis'ma v Zh. Èksper. Teoret. Fiz., 83:8 (2006),  410–413
  15. Terahertz electroluminescence under conditions of shallow acceptor breakdown in germanium

    Pis'ma v Zh. Èksper. Teoret. Fiz., 79:8 (2004),  448–451
  16. Vibration-energy nonequilibrium distribution of defects under multiphonon recombination

    Fizika i Tekhnika Poluprovodnikov, 26:10 (1992),  1815–1824
  17. Electron trapping on repulsong coulomb centers in germanium

    Fizika i Tekhnika Poluprovodnikov, 26:9 (1992),  1569–1573
  18. Polarization spectrum of optically oriented photocarriers in semiconductors in induced optical recombination transitions

    Fizika Tverdogo Tela, 33:1 (1991),  174–181
  19. Разогрев локальных колебаний при безызлучательной рекомбинации и рекомбинационно-стимулированные явления в полупроводниках (обзор)

    Fizika i Tekhnika Poluprovodnikov, 25:9 (1991),  1489–1516
  20. Интерфейсная люминесценция, обусловленная надбарьерным отражением в изотипной гетероструктуре $p$-InAs/$P$-InAsPSb

    Fizika i Tekhnika Poluprovodnikov, 25:2 (1991),  298–306
  21. Резонанс Фано эффекта увлечения электронов фотонами в полупроводниках

    Fizika i Tekhnika Poluprovodnikov, 24:12 (1990),  2193–2197
  22. Узкозонные гетеропереходы II типа в системе твердых растворов GaSb$-$InAs

    Fizika i Tekhnika Poluprovodnikov, 24:8 (1990),  1397–1406
  23. Local vibration heating under nonradiative recombination

    Fizika Tverdogo Tela, 31:11 (1989),  135–148
  24. Новый «электронный» механизм энергетической релаксации локальных колебаний сильно возбужденных дефектов

    Fizika i Tekhnika Poluprovodnikov, 23:12 (1989),  2232–2234
  25. Thermally-assisted field ionization of impurities: multimode consideration

    Fizika Tverdogo Tela, 30:8 (1988),  2498–2504
  26. Multiphonon recombination via deep impurity centers

    Fizika Tverdogo Tela, 30:6 (1988),  1793–1802
  27. Влияние заряда глубокого центра на многофононные процессы термоионизации и захвата электронов

    Fizika i Tekhnika Poluprovodnikov, 22:2 (1988),  262–268
  28. Auger-recombination of exciton-impurity complexes

    Fizika Tverdogo Tela, 29:8 (1987),  2351–2360
  29. Current Induced by Electron Probe in Semiconductor Heterostructures

    Fizika i Tekhnika Poluprovodnikov, 21:9 (1987),  1648–1653
  30. Light electroabsorption by deep impurity centers in semiconductors with a complex valence band structure

    Fizika Tverdogo Tela, 28:7 (1986),  2127–2134
  31. On impurity auger-recombination

    Fizika Tverdogo Tela, 27:8 (1985),  2313–2319
  32. Account of continuous spectrum perturbated wave functions in impurity absorption

    Fizika Tverdogo Tela, 27:5 (1985),  1492–1498
  33. Effects of scattering on shallow neutral center on transport phenomena at low temperatures

    Fizika Tverdogo Tela, 27:1 (1985),  69–76
  34. Auger Recombination via Donors

    Fizika i Tekhnika Poluprovodnikov, 19:9 (1985),  1715–1717
  35. Ionization Potentials of Multicharge Deep Impurities in Cubic Semiconductors

    Fizika i Tekhnika Poluprovodnikov, 19:1 (1985),  96–100
  36. Tunnelling from deep centers in strong electric fields

    Fizika Tverdogo Tela, 26:11 (1984),  3307–3315
  37. Photoionization cross-section for $h$-center-conduction band transition

    Fizika Tverdogo Tela, 26:6 (1984),  1877–1879
  38. Impact Recombination of Electrons via Deep and Shallow Acceptors in $p$-Type Semiconductors

    Fizika i Tekhnika Poluprovodnikov, 18:1 (1984),  43–48
  39. Thermostimulated emission of electrons in isolators

    Fizika Tverdogo Tela, 25:6 (1983),  1855–1857
  40. Deep $h$-center photoionization in semiconductors

    Fizika Tverdogo Tela, 25:6 (1983),  1650–1659
  41. On Urbach's rule

    Fizika Tverdogo Tela, 25:3 (1983),  727–733
  42. Ударная ионизация дырками в полупроводниках со сложной структурой валентной зоны

    Fizika i Tekhnika Poluprovodnikov, 17:5 (1983),  875–880
  43. Ударная ионизация электронами в полупроводниках A$^{\text{III}}$B$^{\text{V}}$

    Fizika i Tekhnika Poluprovodnikov, 17:1 (1983),  46–51

© Steklov Math. Inst. of RAS, 2026